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公开(公告)号：US20240347306A1
公开(公告)日：2024-10-17
申请号：US18294251
申请日：2022-06-23
发明人： Hiromitsu CHATANI , Daisuke ISHIKAWA , Jie TANG , Tadakatsu OHKUBO , Shuai TANG , Jun UZUHASHI , Kazuhiro HONO
摘要： A manufacturing method for an electron source according to the present disclosure includes steps of: (A) cutting out a chip from a block of an electron emission material, (B) fixing a first end portion of the chip to a distal end of a support needle, and (C) sharpening a second end portion of the chip. The step (A) includes forming first and second grooves which constitute first and second surfaces of the chip in the block by irradiating a surface of the block with an ion beam. The first end portion of the chip includes the first surface and the second surface with the surfaces forming an angle α of 10 to 90°. The step (B) includes forming a joint between the distal end of the support needle and the first end portion of the chip.
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公开(公告)号：US20210020193A1
公开(公告)日：2021-01-21
申请号：US17040645
申请日：2019-02-26
IPC分类号： G11B5/39 , G11B5/706 , G11B5/127 , G11B5/02 , G01R33/09 , G11C11/16 , H01L43/10 , H01L43/02 , H01L43/08
摘要： Provided is a precursor of a current-perpendicular-to-plane giant magnetoresistive element having a laminated structure of ferromagnetic metal layer/nonmagnetic metal layer/ferromagnetic metal layer, the precursor having a nonmagnetic intermediate layer containing a non-magnetic metal and an oxide in a predetermined ratio such that the distribution thereof is nearly uniform at the atomic level. Also provided is a current-perpendicular-to-plane giant magnetoresistive element having a current-confinement structure (CCP) which has: a current confinement structure region made of a conductive alloy and obtained by heat-treating a laminated structure of a ferromagnetic metal layer and a nonmagnetic intermediate layer at a predetermined temperature; and a high-resistance metal alloy region containing an oxide and surrounding the current confinement structure region.
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公开(公告)号：US20170140784A1
公开(公告)日：2017-05-18
申请号：US15127527
申请日：2015-03-19
发明人： Hiroaki SUKEGAWA , Zhenchao WEN , Seiji MITANI , Koichiro INOMATA , Takao FURUBAYASHI , Jason Paul HADORN , Tadakatsu OHKUBO , Kazuhiro HONO , Jungwoo KOO
CPC分类号： G11B5/653 , G11B5/3909 , G11B5/65 , G11B5/656 , G11B5/66 , G11B5/7315 , G11B5/7325 , G11B5/8404 , G11B5/851 , G11C11/161 , H01F10/123 , H01F10/30 , H01F10/3286
摘要： Disclosed is a perpendicularly magnetized film structure that uses a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow with high quality, the structure comprising any one substrate (5) of a cubic single crystal substrate having a (001) plane, or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer (6) formed on the substrate (5) from a thin film of a metal having an hcp structure, such as Ru or Re, in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the direction or the (001) orientation of the substrate (5); and a perpendicularly magnetized layer (7) located on the metal underlayer (6) and formed from a cubic material selected from the group consisting of a Co-based Heusler alloy, a cobalt-iron (CoFe) alloy having a bcc structure, and the like, as a constituent material, and grown to have the (001) plane.
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公开(公告)号：US20210036217A1
公开(公告)日：2021-02-04
申请号：US16498936
申请日：2018-02-15
申请人： National Institute of Advanced Industrial Science and Technology , TOHOKU UNIVERSITY , NATIONAL INSTITUTE FOR MATERIALS SCIENCE
发明人： Takayuki NOZAKI , Shinji YUASA , Rachwal Anna KOZIOL , Masahito TSUJIKAWA , Masafumi SHIRAI , Kazuhiro HONO , Tadakatsu OHKUBO , Xiandong XU
摘要： According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.
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公开(公告)号：US20190259937A1
公开(公告)日：2019-08-22
申请号：US16275947
申请日：2019-02-14
发明人： Shinto ICHIKAWA , Katsuyuki NAKADA , Seiji MITANI , Hiroaki SUKEGAWA , Kazuhiro HONO , Tadakatsu OHKUBO
摘要： Provided is a magnetoresistance effect element in which a tunnel barrier layer stably has a cation disordered spinel structure. This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. In addition, the tunnel barrier layer is an oxide of MgxAl1-x (0≤x
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公开(公告)号：US20180040404A1
公开(公告)日：2018-02-08
申请号：US15784975
申请日：2017-10-16
发明人： Hidefumi KISHIMOTO , Noritsugu SAKUMA , Masao YANO , Weibin CUI , Yukiko TAKAHASHI , Kazuhiro HONO
CPC分类号： H01F7/02 , C22C38/005 , H01F1/0311 , H01F10/126
摘要： The invention provides a nanocomposite magnet, which has achieved high coercive force and high residual magnetization. The magnet is a non-ferromagnetic phase that is intercalated between a hard magnetic phase with a rare-earth magnet composition and a soft magnetic phase, wherein the non-ferromagnetic phase reacts with neither the hard nor soft magnetic phase. A hard magnetic phase contains Nd2Fe14B, a soft magnetic phase contains Fe or Fe2Co, and a non-ferromagnetic phase contains Ta. The thickness of the non-ferromagnetic phase containing Ta is 5 nm or less, and the thickness of the soft magnetic phase containing Fe or Fe2Co is 20 nm or less. Nd, or Pr, or an alloy of Nd and any one of Cu, Ag, Al, Ga, and Pr, or an alloy of Pr and any one of Cu, Ag, Al, and Ga is diffused into a grain boundary phase of the hard magnetic phase of Nd2Fe14B.
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公开(公告)号：US20160155919A1
公开(公告)日：2016-06-02
申请号：US14947422
申请日：2015-11-20
发明人： Yohei KINOSHITA , Yuya SAKURABA , Taisuke SASAKI , Kazuhiro HONO
IPC分类号： H01L35/20
CPC分类号： H01L35/20 , C22C38/00 , C22C2202/00
摘要： Provided is a thermoelectric material which can increase its anomalous Nernst angle. The thermoelectric material of a magnetic material for a thermoelectric power generation device employs the anomalous Nernst effect, including iron doped with iridium.
摘要翻译： 提供可以增加其异常能斯特角的热电材料。 用于热电发电装置的磁性材料的热电材料使用包括掺杂有铱的铁的异常能斯特效应。
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公开(公告)号：US20160019917A1
公开(公告)日：2016-01-21
申请号：US14774987
申请日：2014-04-02
发明人： Ye DU , Takao FURUBAYASHI , Yukiko TAKAHASHI , Kazuhiro HONO
CPC分类号： G11B5/3932 , B82Y10/00 , G01R33/093 , G11B5/09 , G11B5/1278 , G11B5/39 , G11B5/3906 , G11B2005/3996 , H01L43/08 , H01L43/10
摘要： The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.
摘要翻译： 本发明的CPPGMR元件具有形成在基板11上以将Heusler合金构造成（100）方向的取向层12，作为层叠在取向层12上的用于磁电阻测量的电极的下层13， 每个层叠在下层13上并由Heusler合金制成的下铁磁层14和上铁磁层16，夹在下铁磁层14和上铁磁层16之间的间隔层15和堆叠在其上的盖层17 用于表面保护的上铁磁层16。 这种方式使得可以廉价地提供使用具有铁磁金属/非磁性金属/铁磁性金属的三层结构的薄膜的电流 - 垂直于平面的巨磁阻效应（CPPGMR）的元件， 从而表现出优异的表现。
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公开(公告)号：US20190237099A1
公开(公告)日：2019-08-01
申请号：US16311367
申请日：2017-06-23
发明人： Shinya KASAI , Yukiko TAKAHASHI , Pohan CHENG , IKHTIAR , Seiji MITANI , Tadakatsu OHKUBO , Kazuhiro HONO
IPC分类号： G11B5/39 , H01F10/13 , H01F10/16 , H01F10/30 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： G11B5/3909 , G11B5/39 , H01F10/13 , H01F10/132 , H01F10/16 , H01F10/30 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
摘要： An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [Ωμm2] or more and 3 [Ωμm2] or less.
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公开(公告)号：US20180090671A1
公开(公告)日：2018-03-29
申请号：US15699749
申请日：2017-09-08
发明人： Yushi KATO , Tadaomi DAIBOU , Yuuzo KAMIGUCHI , Naoharu SHIMOMURA , Junichi ITO , Hiroaki SUKEGAWA , Mohamed BELMOUBARIK , Po-Han CHENG , Seiji MITANI , Tadakatsu OHKUBO , Kazuhiro HONO
CPC分类号： H01L43/08 , H01L27/228 , H01L43/02 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.
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