公开(公告)号：US20130285109A1

公开(公告)日：2013-10-31

申请号：US13831138

申请日：2013-03-14

Applicant: NICHIA CORPORATION

Inventor： Junya NARITA ,  Takuya OKADA ,  Yohei WAKAI ,  Yoshiki INOUE ,  Naoya SAKO ,  Katsuyoshi KADAN

IPC: H01L33/20

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

Abstract translation: 具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面的蓝宝石衬底包括主表面上的多个突起。 每个突起具有基本上多边形的底部。 突起的底部的每一侧在其中心具有凹陷。 相应突起的底部的顶点在与蓝宝石基板的晶轴“a”逆时针旋转30度的方向的±10度的范围内延伸。