公开(公告)号：US09418842B2

公开(公告)日：2016-08-16

申请号：US14361150

申请日：2012-11-28

申请人： Yuki Nakamura ,  Naoyuki Ueda ,  Yukiko Abe ,  Yuji Sone ,  Shinji Matsumoto ,  Mikiko Takada ,  Ryoichi Saotome

发明人： Yuki Nakamura ,  Naoyuki Ueda ,  Yukiko Abe ,  Yuji Sone ,  Shinji Matsumoto ,  Mikiko Takada ,  Ryoichi Saotome

IPC分类号： H01L21/02 ,  H01L29/786 ,  H01L29/221 ,  H01L29/66

CPC分类号： H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02628 ,  H01L29/221 ,  H01L29/66969 ,  H01L29/7869

摘要： A coating liquid for forming a metal oxide thin film includes: an inorganic indium compound; an inorganic calcium compound or an inorganic strontium compound, or both thereof; and an organic solvent.

摘要翻译： 用于形成金属氧化物薄膜的涂布液包括：无机铟化合物; 无机钙化合物或无机锶化合物，或其二者; 和有机溶剂。

公开(公告)号：US20150158300A1

公开(公告)日：2015-06-11

申请号：US14412827

申请日：2013-07-19

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome

IPC分类号： B41J2/16 ,  B23P15/16

CPC分类号： B41J2/162 ,  B23P15/16 ,  B41J2/1433 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/11 ,  Y10T29/49401

摘要： A nozzle plate having a nozzle hole that penetrates through the nozzle plate in a thickness direction is disclosed. The nozzle plate includes a discharge outlet that is formed at the nozzle hole, and provided curvatures of four corner portions of an opening shape of the discharge outlet are denoted as R1, R2, R3, and R4, the opening shape of the discharge outlet is configured to approximate the equation R1=R2≧R3=R4≈0.

摘要翻译： 公开了一种喷嘴板，其具有沿厚度方向穿过喷嘴板的喷嘴孔。 喷嘴板包括形成在喷嘴孔处的排出口，排出口的开口形状的四个角部的曲率表示为R1，R2，R3，R4，排出口的开口形状为 被配置为近似等式R1 =R2≥R3=R4≈0。

公开(公告)号：US20150001531A1

公开(公告)日：2015-01-01

申请号：US14312950

申请日：2014-06-24

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1229 ,  H01L29/04 ,  H01L29/24

摘要： A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.

摘要翻译： 场效应晶体管，其包含：施加栅极电压的栅电极; 源电极和漏电极，其被配置为提取电流; 由n型氧化物半导体形成的有源层设置成与源电极和漏电极接触; 以及栅极绝缘层，其设置在所述栅电极和所述有源层之间，其中所述n型氧化物半导体是三斜晶体化合物，单斜晶体化合物或三元晶体化合物，其中每一个被替代地掺杂有至少一种掺杂剂 选自二价阳离子，三价阳离子，四价阳离子，五价阳离子和六价阳离子，并且其中所述掺杂剂的化合价大于构成所述n型氧化物半导体的金属离子的化合价 ，不包括掺杂剂。

公开(公告)号：US11315961B2

公开(公告)日：2022-04-26

申请号：US16486224

申请日：2018-03-15

申请人： Sadanori Arae ,  Yuichi Ando ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Naoyuki Ueda ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Yuichi Ando ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Naoyuki Ueda ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  H01L29/417

摘要： (Object) To miniaturize a field-effect transistor. (Means of Achieving the Object) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.

公开(公告)号：US10204799B2

公开(公告)日：2019-02-12

申请号：US15376895

申请日：2016-12-13

申请人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

发明人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

IPC分类号： H01L21/44 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66 ,  H01L21/477 ,  H01L29/786

摘要： A method for manufacturing a field-effect transistor includes forming an active layer of an oxide semiconductor, forming a conducting film to cover the active layer, patterning the conducting film through an etching process using an etchant to form a source electrode and a drain electrode, and performing, at least before the patterning the conducting film, a treatment on the active layer so that an etching rate of the active layer is less than an etching rate of the conducting film.

公开(公告)号：US10818770B2

公开(公告)日：2020-10-27

申请号：US16518265

申请日：2019-07-22

申请人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

发明人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

IPC分类号： H01L27/12 ,  H01L29/51 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/66 ,  H01L29/786

摘要： Method for producing field-effect transistor including source electrode and drain electrode, gate electrode, active layer, and gate insulating layer, the method including etching the gate insulating layer, wherein the gate insulating layer is metal oxide including A-element and at least one selected from B-element and C-element, the A-element is at least one selected from Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B-element is at least one selected from Ga, Ti, Zr, and Hf, the C-element is at least one selected from Group 2 elements in periodic table, etching solution A is used when at least one selected from the source electrode and the drain electrode, the gate electrode, and the active layer is formed, and etching solution B that is etching solution having same type as the etching solution A is used when the gate insulating layer is etched.

公开(公告)号：US10586873B2

公开(公告)日：2020-03-10

申请号：US16131760

申请日：2018-09-14

申请人： Shinji Matsumoto ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Shinji Matsumoto ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L51/00

摘要： A method for producing a field-effect transistor including first-oxide-layer and second-oxide-layer and forming front-channel or back-channel in region where the first-oxide-layer and the second-oxide-layer are adjacent to each other, the method including: forming second-precursor-layer, which is precursor of the second-oxide-layer, so as to be in contact with first-precursor-layer, which is precursor of the first-oxide-layer, and then converting the first-precursor-layer and the second-precursor-layer to the first-oxide-layer and the second-oxide-layer, respectively, the forming includes at least one of treatments (I) and (II) below: (I) treatment of: coating first-oxide-precursor-forming coating liquid that can form precursor of first oxide and contains solvent; and then removing the solvent to form the first-precursor-layer which is the precursor of the first-oxide-layer; and (II) treatment of: coating second-oxide-precursor-forming coating liquid that can form precursor of second oxide and contains solvent; and then removing the solvent to form the second-precursor-layer which is the precursor of the second-oxide-layer.

公开(公告)号：US10170635B2

公开(公告)日：2019-01-01

申请号：US15370253

申请日：2016-12-06

申请人： Shinji Matsumoto ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Shinji Matsumoto ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L29/00 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L27/32 ,  G09G3/3233 ,  G09G3/34 ,  G09G3/36 ,  G09G3/38

摘要： A semiconductor device includes a base; a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode through which an electric current is generated according to the gate voltage being applied to the gate electrode; a semiconductor layer made of an oxide semiconductor; and a gate insulating layer inserted between the gate electrode and the semiconductor layer. The semiconductor layer includes a channel-forming region and a non-channel-forming region; the channel-forming region is in contact with the source electrode and the drain electrode, and the non-channel-forming region is in contact with the source electrode and the drain electrode.

公开(公告)号：US10115828B2

公开(公告)日：2018-10-30

申请号：US15220588

申请日：2016-07-27

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L21/336 ,  H01L21/768 ,  H01L29/24 ,  H01L29/45 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L51/00 ,  H01L51/30 ,  G09G3/3225 ,  G09G3/34 ,  H01L29/40 ,  H01L29/417 ,  H01L27/12 ,  H01L27/32 ,  H01L21/02 ,  H01L51/05 ,  H01L51/10 ,  H01L27/28 ,  H01L29/66

摘要： A field-effect transistor including: a gate electrode; a source electrode and a drain electrode; an active layer disposed to be adjacent to the source electrode and the drain electrode and including a n-type oxide semiconductor; and a gate insulating layer disposed between the gate electrode and the active layer, wherein the n-type oxide semiconductor undergoes substitutional doping with at least one dopant selected from divalent, trivalent, tetravalent, pentavalent, hexavalent, heptavalent, and octavalent cations, valence of the dopant is greater than valence of a metal ion constituting the n-type oxide semiconductor, provided that the dopant is excluded from the metal ion, and the source electrode and the drain electrode include a material selected from Au, Pt, and Pd and alloys including at least any one of Au, Pt, and Pd, in at least contact regions of the source electrode and the drain electrode with the active layer.

公开(公告)号：US10008181B2

公开(公告)日：2018-06-26

申请号：US15452886

申请日：2017-03-08

申请人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  G09G5/10 ,  H01L27/32

CPC分类号： G09G5/10 ,  G09G3/20 ,  G09G2300/0426 ,  G09G2300/08 ,  G09G2320/0646 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78693

摘要： A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer, formed between the substrate and passivation layer; a source electrode and a drain electrode, formed to be in contact with the gate insulating layer; a semiconductor layer, formed at least between the source electrode and drain electrode and being in contact with the gate insulating layer, source electrode, and drain electrode; and a gate electrode, in contact with the gate insulating layer and facing the semiconductor layer via the gate insulating layer, wherein the passivation layer is formed of a single layer containing a paraelectric amorphous oxide containing a Group A element, an alkaline earth metal and a Group B element, at least one selected from Ga, Sc, Y, and lanthanoid, and the gate insulating layer contains at least one selected from oxides of Si, nitrides of Si, and oxynitrides of Si.