利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

68 条记录 (耗时 0.029 秒)

    Field-effect transistor, display element, image display device, and system
    4.
    发明授权
    Field-effect transistor, display element, image display device, and system 有权
    场效应晶体管，显示元件，图像显示装置和系统

    公开(公告)号：US09112039B2

    公开(公告)日：2015-08-18

    申请号：US14312950

    申请日：2014-06-24

    申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

    发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

    IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1229 ,  H01L29/04 ,  H01L29/24

    摘要： A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.

    摘要翻译： 场效应晶体管，其包含：施加栅极电压的栅电极; 源电极和漏电极，其被配置为提取电流; 由n型氧化物半导体形成的有源层设置成与源电极和漏电极接触; 以及栅极绝缘层，其设置在所述栅电极和所述有源层之间，其中所述n型氧化物半导体是三斜晶体化合物，单斜晶体化合物或三元晶体化合物，其中每一个被替代地掺杂有至少一种掺杂剂 选自二价阳离子，三价阳离子，四价阳离子，五价阳离子和六价阳离子，并且其中所述掺杂剂的化合价大于构成所述n型氧化物半导体的金属离子的化合价 ，不包括掺杂剂。

    FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM
    8.
    发明申请
    FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM 有权
    场效应晶体管，显示元件，图像显示装置和系统

    公开(公告)号：US20150001531A1

    公开(公告)日：2015-01-01

    申请号：US14312950

    申请日：2014-06-24

    申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

    发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

    IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  H01L29/04

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1229 ,  H01L29/04 ,  H01L29/24

    摘要： A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.

    摘要翻译： 场效应晶体管，其包含：施加栅极电压的栅电极; 源电极和漏电极，其被配置为提取电流; 由n型氧化物半导体形成的有源层设置成与源电极和漏电极接触; 以及栅极绝缘层，其设置在所述栅电极和所述有源层之间，其中所述n型氧化物半导体是三斜晶体化合物，单斜晶体化合物或三元晶体化合物，其中每一个被替代地掺杂有至少一种掺杂剂 选自二价阳离子，三价阳离子，四价阳离子，五价阳离子和六价阳离子，并且其中所述掺杂剂的化合价大于构成所述n型氧化物半导体的金属离子的化合价 ，不包括掺杂剂。