-
11.发明授权Method and apparatus for metal oxide chemical vapor deposition on a substrate surface 失效在基板表面上进行金属氧化物化学气相沉积的方法和装置公开(公告)号：US06261373B1
公开(公告)日：2001-07-17
申请号：US09352080
申请日：1999-07-14
申请人： Robert W. Grant
发明人： Robert W. Grant
IPC分类号： C23C1600
CPC分类号： C23C16/45557 , C23C16/4415
摘要： A method and apparatus for improved metal oxide chemical vapor deposition on a substrate surface where the application boundary layer is reduced and where the uniformity of the application boundary layer is greatly enhanced in a reactor. Primary and secondary sonic or other disturbance sources are introduced to the interior chamber or an oscillating chuck is incorporated to influence the boundary layer thickness and uniformity.
摘要翻译： 一种在衬底表面上改善金属氧化物化学气相沉积的方法和装置，其中应用边界层被减少，并且在反应器中大大增强了应用边界层的均匀性。 一次和二次声波或其他扰动源被引入到室内或者混合摆动卡盘以影响边界层的厚度和均匀性。
-
12.发明授权Method and apparatus for metal oxide chemical vapor deposition on a substrate surface 失效在基板表面上进行金属氧化物化学气相沉积的方法和装置公开(公告)号：US06231933B1
公开(公告)日：2001-05-15
申请号：US09272036
申请日：1999-03-18
申请人： Robert W. Grant
发明人： Robert W. Grant
IPC分类号： C23C16455
CPC分类号： C23C16/45557 , C23C16/4415
摘要： A method and apparatus for improved metal oxide chemical vapor deposition on a substrate surface where the application boundary layer is reduced and where the uniformity of the application boundary layer is greatly enhanced in a reactor. Primary and secondary sonic or other disturbance sources are incorporated for introducing disturbance into the interior chamber of the reactor, or an oscillating or vibrating chuck is incorporated within the interior chamber, to influence the boundary layer thickness and uniformity.
摘要翻译： 一种在衬底表面上改善金属氧化物化学气相沉积的方法和装置，其中应用边界层被减少，并且在反应器中大大增强了应用边界层的均匀性。 引入了一级和二级声波或其他干扰源，用于将扰动引入反应堆的内部腔室，或者振荡或振动的卡盘结合在内部腔室内，以影响边界层的厚度和均匀性。
-
公开(公告)号：US5228206A
公开(公告)日：1993-07-20
申请号：US820985
申请日：1992-01-15
申请人： Robert W. Grant , Richard E. Novak
发明人： Robert W. Grant , Richard E. Novak
IPC分类号： C23F4/00 , F26B3/28 , F26B21/08 , F26B21/14 , H01L21/00 , H01L21/302 , H01L21/304
CPC分类号： H01L21/67028 , F26B21/08 , F26B21/14 , F26B3/283
摘要： A cluster tool module for dry process cleaning of substrates. A substrate process reactor body assembly includes a gas inlet and gas outlet on opposing sides of a ceramic reactor body. A linear xenon flash lamp in a light bar provides a UV source for uniform distribution over a substrate by use of a light filter. Infrared heating is also provided by a plurality of infrared lamps in the light box. A moisturizer is provided for safe introduction of water vapor into the gas flow.
-
公开(公告)号：US20130327648A1
公开(公告)日：2013-12-12
申请号：US13688912
申请日：2012-11-29
CPC分类号： C25D11/00 , C25D3/54 , C25D3/665 , H01M4/0402 , H01M4/0459 , H01M4/139 , Y02E60/122
摘要： The present invention relates to a method for lithiation of an intercalation-based anode or a non-reactive plating-capable foil or a reactive alloy capable anode, whereby utilization of said lithiated intercalation-based anode or a plating-capable foil or reactive alloy capable anode in a rechargeable battery or electrochemical cell results in an increased amount of lithium available for cycling, and an improved reversible capacity during charge and discharge.
摘要翻译： 本发明涉及一种基于插层的阳极或不具有反应性电镀能力的箔或具有反应性合金的阳极的锂化方法，由此利用所述锂化嵌层基阳极或可镀覆箔或活性合金 可再充电电池或电化学电池中的阳极导致可用于循环的锂的量增加，并且在充电和放电期间改善可逆容量。
-
15.发明授权公开(公告)号：US07771563B2
公开(公告)日：2010-08-10
申请号：US10991554
申请日：2004-11-18
IPC分类号： H01L21/306 , C03C25/68
CPC分类号： H01L21/6719 , H01L21/67103 , H01L21/67109 , H01L21/67303 , H01L21/67306 , H01L21/6732 , H01L21/67323 , H01L21/67748 , H01L21/67757 , H01L21/67781
摘要： A system and method for processing substrates that achieves isothermal and uniform fluid flow processing conditions for a plurality of substrates. In one aspect, the invention is a system and method that utilizes matching the emissivity value of the surfaces of a process chamber that oppose exposed surfaces of the substrates with the emissivity value of the exposed surfaces to achieve isothermal conditions throughout a substrate stack. In another aspect, the invention is system and method of processing substrates in a process chamber that exhibits excellent fluid flow uniformity by eliminating cavities or geometrical irregularities in the process chamber profile due to substrate loading openings. In yet anther aspect, the invention is a system and method of processing substrates wherein the process chamber comprises a liner and a shell, the liner constructed of a highly thermally conductive material, such as carbon, and the shell is constructed of a non-porous material, such as stainless steel.
摘要翻译： 一种用于处理实现多个基板的等温且均匀的流体流动处理条件的基板的系统和方法。 在一个方面，本发明是一种系统和方法，利用将处理室的与基板的暴露表面相对的表面的发射率与暴露表面的发射率值相匹配来实现整个衬底叠层的等温条件。 在另一方面，本发明是在处理室中处理衬底的系统和方法，其通过消除由于衬底加载开口而导致的处理室轮廓中的空腔或几何不规则性而显示出优异的流体流动均匀性。 在另一方面，本发明是一种处理衬底的系统和方法，其中处理室包括衬套和壳体，衬套由高导热性材料（例如碳）构成，壳体由无孔 材质，如不锈钢。
-
公开(公告)号：US06428847B1
公开(公告)日：2002-08-06
申请号：US09688555
申请日：2000-10-16
IPC分类号： C23C1600
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45563 , C30B25/14
摘要： Chemical vapor deposition reactor incorporating gas flow vortex formation for uniform chemical vapor deposition upon a stationary wafer substrate. Gas flow including chemical vapors is introduced in tangential fashion to the interior of the heated reactor to provide for suitable uniform boundary layer control within the reactor upon the stationary wafer substrate.
摘要翻译： 包含气流涡流形成的化学气相沉积反应器，用于在固定晶片衬底上进行均匀的化学气相沉积。 包括化学蒸气的气流以切向的方式引入加热的反应器的内部，以在反应器内在固定晶片衬底上提供合适的均匀边界层控制。
-
公开(公告)号：US5332271A
公开(公告)日：1994-07-26
申请号：US769778
申请日：1991-10-02
CPC分类号： F16L19/0283 , F16L19/04 , F16L47/04 , Y10S285/911 , Y10S411/02 , Y10S411/904
摘要： High temperature ceramic nut of aluminum oxide for use in coupling a flared tube to a flare fitting.
摘要翻译： 高温陶瓷螺母氧化铝，用于将喇叭管连接到火炬配件。
-
公开(公告)号：US5247954A
公开(公告)日：1993-09-28
申请号：US791094
申请日：1991-11-12
申请人： Robert W. Grant , Richard E. Novak
发明人： Robert W. Grant , Richard E. Novak
CPC分类号： H01L21/67057 , B08B3/12
摘要： Megasonic cleaning system for use in cleaning of electronic or other items such as semiconductor wafers or semiconductor substrates in a wafer carrier. Formed piezoelectric transducers are bonded to a tubular envelope at a low temperature and are excited at a first frequency or a second higher frequency for cleaning of items in a cleaning tank. A novel sealing assembly accommodates tubular envelopes of varying diameters.
摘要翻译： 用于清洁晶片载体中的诸如半导体晶片或半导体衬底的电子或其它物品的超声波清洗系统。 形成的压电换能器在低温下被结合到管状外壳上，并以第一频率或第二较高频率被激发以清洁清洗槽中的物品。 新颖的密封组件适应不同直径的管状包络。
-
公开(公告)号：US4848400A
公开(公告)日：1989-07-18
申请号：US158194
申请日：1988-02-19
IPC分类号： F16L27/08
CPC分类号： F16L27/0808 , Y10T137/5762 , Y10T137/5835 , Y10T137/7036 , Y10T137/86268 , Y10T137/86276
摘要： The rotary fluid coupling decreases the possibility of microcontaminates entering the fluid flow line and is thus especially suitable for processing equipment in manufacturing of wafers and other components for the microcomputer industry. The rotary fluid coupling interconnects a fluid conveying passageway and a spindle element to a duct in a second element such that the two elements are rotatable with respect to each other. An axial channel is provided along the length of the spindle. A planar faced plate is mounted on the spindle. A bore in the spindle plate is in axial alignment with the spindle channel, generally forming a single continuous fluid conveying passageway. A second element has a generally planar distal faced plate. A fluid conducting duct extends from an aperture on the distal face of the second plate to a fluid source with the two faces generally aligned in parallel relationship to each other creating a fluid permeable gap. A fluid flow resistant labyrinth may be provided on one or both faces. In use, fluid flowing from the fluid source through the fluid conducting duct and the aperture in the second element crosses the fluid permeable gap to enter the fluid conveying passageway in the spindle elements. Synthetic resin coating is further provided within the fluid conveying passageway of the spindle element serving to prevent microcontaminates from being generated by corrosion of the metallic surface by the action of the fluid flowing therethrough.
摘要翻译： 旋转流体联轴器降低了微粒进入流体流动管线的可能性，因此特别适用于微晶工业制造晶圆和其它部件的加工设备。 旋转流体耦合将流体输送通道和主轴元件互连到第二元件中的管道，使得两个元件可相对于彼此旋转。 沿着主轴的长度设置轴向通道。 一个平面的面板安装在主轴上。 主轴板中的孔与主轴通道轴向对齐，通常形成一个连续的流体输送通道。 第二元件具有大致平面的远侧面板。 流体导管从第二板的远端上的孔延伸到流体源，两个面通常彼此平行地对准，产生流体可渗透的间隙。 可以在一个或两个面上设置流体阻力迷宫。 在使用中，从流体源流过流体导管和第二元件中的孔的流体穿过流体可渗透间隙，以进入主轴元件中的流体输送通道。 合成树脂涂层进一步设置在主轴元件的流体输送通道内，用于防止由于流过其中的流体的作用而使金属表面的腐蚀而产生微粒。
-
公开(公告)号：US5439553A
公开(公告)日：1995-08-08
申请号：US219961
申请日：1994-03-30
申请人： Robert W. Grant , Jerzy Ruzyllo , Kevin Torek
发明人： Robert W. Grant , Jerzy Ruzyllo , Kevin Torek
IPC分类号： C30B33/12 , B08B6/00 , C23F1/12 , H01L21/302 , H01L21/311
CPC分类号： H01L21/31116
摘要： Oxides are etched with a halide-containing species and a low molecular weight organic molecule having a high vapor pressure at standard conditions, where etching is performed at preset wafer temperature in an enclosed chamber at a pressure such that all species present in the chamber, including water, are in the gas phase and condensation of species present on the etched surface is controlled. Thus all species involved remain in the gas phase even if trace water vapor appears in the process chamber. Preferably, etching is performed in a cluster dry tool apparatus.
摘要翻译： 在标准条件下用含卤化物的物质和具有高蒸气压的低分子量有机分子蚀刻氧化物，其中在封闭的室中以预设的晶片温度进行蚀刻，其压力使得存在于室中的所有物质包括 水，处于气相中，并且控制存在于蚀刻表面上的物质的冷凝。 因此，即使在处理室中出现痕量水蒸汽，所有涉及的物种都保持在气相中。 优选地，在簇干燥工具装置中进行蚀刻。
-
-
-
-
-
-
-
-
-
搜索结果
24 条记录 (耗时 0.025 秒)
