中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

26 records (took 0.018 seconds)

    BOOTSTRAP POWER SUPPLY CIRCUIT
    11.
    发明申请
    BOOTSTRAP POWER SUPPLY CIRCUIT 有权

    公开(公告)号：US20220278605A1

    公开(公告)日：2022-09-01

    申请号：US17745700

    申请日：2022-05-16

    Applicant: Navitas Semiconductor Limited

    Inventor： Santosh Sharma ,  Daniel Marvin Kinzer

    IPC: H02M1/08 ,  H02M3/158 ,  H03K17/081

    Abstract: A GaN half bridge circuit is disclosed. The circuit includes a bootstrap power supply voltage generator is configured to supply a first power voltage and includes a switch node. The circuit also includes a bootstrap transistor, a bootstrap transistor drive circuit, and a bootstrap capacitor connected to the switch node and to the bootstrap transistor. The bootstrap capacitor is configured to supply the first power voltage while the voltage at the switch node is equal to the second switch node voltage, the bootstrap transistor is configured to electrically connect the bootstrap capacitor to a power node at a second power voltage while the voltage at the switch node is equal to the first switch node voltage, and the bootstrap power supply voltage generator does not include a separate diode in parallel with the drain and source of the bootstrap transistor.

    Bootstrap power supply circuit
    14.
    发明授权
    Bootstrap power supply circuit 有权

    公开(公告)号：US11837946B2

    公开(公告)日：2023-12-05

    申请号：US17745700

    申请日：2022-05-16

    Applicant: Navitas Semiconductor Limited

    Inventor： Santosh Sharma ,  Daniel Marvin Kinzer

    IPC: H02M3/158 ,  H02M1/08 ,  H03K17/081

    CPC classification number: H02M1/08 ,  H02M3/1588 ,  H03K17/08104 ,  H03K2217/0063 ,  H03K2217/0072 ,  H03K2217/0081

    Abstract: A GaN half bridge circuit is disclosed. The circuit includes a bootstrap power supply voltage generator is configured to supply a first power voltage and includes a switch node. The circuit also includes a bootstrap transistor, a bootstrap transistor drive circuit, and a bootstrap capacitor connected to the switch node and to the bootstrap transistor. The bootstrap capacitor is configured to supply the first power voltage while the voltage at the switch node is equal to the second switch node voltage, the bootstrap transistor is configured to electrically connect the bootstrap capacitor to a power node at a second power voltage while the voltage at the switch node is equal to the first switch node voltage, and the bootstrap power supply voltage generator does not include a separate diode in parallel with the drain and source of the bootstrap transistor.

    SYSTEM AND METHODS FOR MOTOR DRIVE USING GAN SYNCHRONOUS RECTIFICATION
    15.
    发明公开
    SYSTEM AND METHODS FOR MOTOR DRIVE USING GAN SYNCHRONOUS RECTIFICATION 审中-公开

    公开(公告)号：US20230308091A1

    公开(公告)日：2023-09-28

    申请号：US18189123

    申请日：2023-03-23

    Applicant: Navitas Semiconductor Limited

    Inventor： Santosh Sharma ,  Thomas Ribarich ,  Matteo Uccelli ,  Victor Sinow

    IPC: H03K17/10 ,  H03K17/06

    CPC classification number: H03K17/102 ,  H03K17/063 ,  H03K2217/0063 ,  H03K2217/0072

    Abstract: Systems and methods for a GaN-based motor drive circuit using synchronous rectification is disclosed. In one aspect, a method of operating a motor drive circuit includes providing a half-bridge circuit including a high-side GaN switch and a low-side GaN switch coupled in series at an output node, providing a motor coupled to the output node, turning on the high-side GaN switch such that a first current flows through the motor, turning off the high-side GaN switch, turning on the low-side GaN switch when a voltage at the output node drops below a predetermined threshold voltage, sensing, using a sense device coupled to the low-side GaN switch, a magnitude of a second current that flows through the low-side GaN switch, and turning off the low-side GaN switch when the magnitude of the second current drops below a predetermined threshold current.

    MONOLITHIC HIGH SIDE GALLIUM NITRIDE DEVICE WITH INTEGRATED CAPACITIVE LEVEL SHIFTER CIRCUITS
    16.
    发明申请
    MONOLITHIC HIGH SIDE GALLIUM NITRIDE DEVICE WITH INTEGRATED CAPACITIVE LEVEL SHIFTER CIRCUITS 有权

    公开(公告)号：US20230139736A1

    公开(公告)日：2023-05-04

    申请号：US18051799

    申请日：2022-11-01

    Applicant: Navitas Semiconductor Limited

    Inventor： Marco Giandalia ,  Santosh Sharma ,  Jung Hee Lee ,  Daniel M. Kinzer

    IPC: H01L27/06 ,  H02M3/00 ,  H02M1/08

    Abstract: Monolithic high side GaN-based circuits using capacitors for level shifting. In one aspect, a power converter includes a GaN-based die, a switch formed on the GaN-based die and having a gate terminal, where the switch is arranged to be selectively conductive according to a driver signal applied to the gate terminal, a buffer circuit formed on the GaN-based die and arranged to receive an input signal and generate a corresponding differential output signal at a first output terminal and at a second output terminal, and a voltage level converter formed on the GaN-based die and having a first input terminal coupled to the first output terminal via a first capacitor and having a second input terminal coupled to the second output terminal via a second capacitor, where the first and second capacitors are formed on the GaN-based die, and the voltage level converter is arranged to generate the driver signal.

    Driver circuits for gallium nitride half bridge power converters
    19.
    发明授权
    Driver circuits for gallium nitride half bridge power converters 有权

    公开(公告)号：US12119809B1

    公开(公告)日：2024-10-15

    申请号：US17571395

    申请日：2022-01-07

    Applicant: Navitas Semiconductor Limited

    Inventor： Santosh Sharma

    IPC: H03K17/06 ,  H02M1/088 ,  H02M3/158

    CPC classification number: H03K17/063 ,  H02M1/088 ,  H02M3/158 ,  H03K2217/0063 ,  H03K2217/0072 ,  H03K2217/0081

    Abstract: A driver circuit is disclosed. The driver circuit is configured to generate a drive voltage for driving a bootstrap transistor. The driver circuit includes an input node and an output node, a first circuit including a plurality of switches, a first capacitor and a second capacitor, and a pass gate switch coupled between the output node and the first capacitor. In one aspect, the first circuit, the first and second capacitors and the pass gate switch are arranged to cause an output voltage at the output node to change from a first output voltage to a second output voltage. In another aspect, a resistor is connected between the first capacitor and the second capacitor, and a feedback switch is connected in parallel to the resistor. The feedback switch is turned on in response to a feedback signal, thereby reducing an impedance value of the resistor.

    Transistor DV/DT control circuit
    20.
    发明授权
    Transistor DV/DT control circuit 有权

    公开(公告)号：US11855635B2

    公开(公告)日：2023-12-26

    申请号：US17853740

    申请日：2022-06-29

    Applicant: Navitas Semiconductor Limited

    Inventor： Hongwei Jia ,  Santosh Sharma ,  Daniel M. Kinzer ,  Victor Sinow ,  Matthew Anthony Topp

    IPC: H03K3/012

    CPC classification number: H03K3/012

    Abstract: Circuits and methods that control a rate of change of a drain voltage as a function of time in a transistor are disclosed. In one aspect, the circuit includes a transistor having a gate terminal that controls operation of the transistor, and a control circuit coupled to the gate terminal and arranged to change a voltage at the gate terminal at a first rate of voltage with respect to time from a first voltage to a first intermediate voltage, and further arranged to change the voltage at the gate terminal at a second rate of voltage with respect to time from the first intermediate voltage to a second intermediate voltage, where the first rate is different than the second rate.

Patent Agency Ranking