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    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
    19.
    发明申请
    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS 审中-公开
    用于生产有机场效应晶体管的方法

    公开(公告)号：US20080090325A1

    公开(公告)日：2008-04-17

    申请号：US11550229

    申请日：2006-10-17

    申请人： Martin KOENEMANN ,  Peter Erk ,  Zhenan Bao ,  Mang Mang Ling

    发明人： Martin KOENEMANN ,  Peter Erk ,  Zhenan Bao ,  Mang Mang Ling

    IPC分类号： H01L51/40 ,  C07D471/02 ,  C07D471/22

    CPC分类号： C07D493/06 ,  C07D471/06 ,  H01L27/283 ,  H01L51/0053 ,  H01L51/0545

    摘要： A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.

    摘要翻译： 一种制造有机场效应晶体管的方法，包括以下步骤：a）提供包括位于所述衬底上的栅极结构，源电极和漏极的衬底，以及b）将n型有机半导体化合物施加到 栅极结构，源电极和漏电极所在的衬底的区域，其中n型有机半导体化合物选自式I化合物，其中R 1， R 2，R 3和R 4独立地是氢，氯或溴，条件是这些基团中的至少一个不是 氢，Y 1是O或NR a，其中R a是氢或有机残基，Y 2， 是O或NR b，其中R b是氢或有机残基，Z 1，Z 2， Z 3和Z 4是O，其中，在Y 1是NR a a的情况下， 残基Z 1和Z 2中的一个可以是NR c，其中R a， 另一方面，在末端键之间具有2〜5个原子的桥连基团，其中，在Y 2的情况下，NR 2是其中之一， 残基Z 3和Z 4可以是NR d D基团，其中R b和R 4都是 一起是在末端键之间具有2至5个原子的桥连基团。

    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
    20.
    发明申请
    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS 有权

    公开(公告)号：US20080017850A1

    公开(公告)日：2008-01-24

    申请号：US11744611

    申请日：2007-05-04

    申请人： Martin Koenemann ,  Peter Erk ,  Zhenan Bao ,  Mang-Mang Ling

    发明人： Martin Koenemann ,  Peter Erk ,  Zhenan Bao ,  Mang-Mang Ling

    IPC分类号： H01L51/30 ,  C07D471/08 ,  H01L51/40 ,  C07D471/22

    CPC分类号： H01L51/0053 ,  C07D471/06 ,  C07D471/16 ,  C07D493/06 ,  H01L27/283 ,  H01L51/0545 ,  H01L51/0558

    摘要： A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.