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    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
    7.
    发明申请
    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS 有权

    公开(公告)号：US20080017850A1

    公开(公告)日：2008-01-24

    申请号：US11744611

    申请日：2007-05-04

    申请人： Martin Koenemann ,  Peter Erk ,  Zhenan Bao ,  Mang-Mang Ling

    发明人： Martin Koenemann ,  Peter Erk ,  Zhenan Bao ,  Mang-Mang Ling

    IPC分类号： H01L51/30 ,  C07D471/08 ,  H01L51/40 ,  C07D471/22

    CPC分类号： H01L51/0053 ,  C07D471/06 ,  C07D471/16 ,  C07D493/06 ,  H01L27/283 ,  H01L51/0545 ,  H01L51/0558

    摘要： A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.

    Method for producing organic field-effect transistors
    8.
    发明授权
    Method for producing organic field-effect transistors 有权
    制造有机场效应晶体管的方法

    公开(公告)号：US07910736B2

    公开(公告)日：2011-03-22

    申请号：US11744611

    申请日：2007-05-04

    申请人： Martin Koenemann ,  Peter Erk ,  Zhenan Bao ,  Mang-Mang Ling

    发明人： Martin Koenemann ,  Peter Erk ,  Zhenan Bao ,  Mang-Mang Ling

    IPC分类号： C07D471/02 ,  H01L51/50 ,  H01L31/112

    CPC分类号： H01L51/0053 ,  C07D471/06 ,  C07D471/16 ,  C07D493/06 ,  H01L27/283 ,  H01L51/0545 ,  H01L51/0558

    摘要： A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3and R4are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.

    摘要翻译： 一种制造有机场效应晶体管的方法，包括以下步骤：a）提供包括位于所述衬底上的栅极结构，源电极和漏极的衬底，以及b）将n型有机半导体化合物施加到 所述栅极结构，所述源极电极和所述漏电极所在的衬底的区域，其中所述n型有机半导体化合物选自由式I化合物组成的组，其中R 1，R 2，R 3和R 4独立地为氢， 氯或溴，条件是这些基团中的至少一个不是氢，Y1是O或NRa，其中Ra是氢或有机残基，Y2是O或NRb，其中Rb是氢或有机残基，Z1， Z2，Z3和Z4是O，其中在Y1是NRa的情况下，残基Z1和Z2之一可以是NRc基团，其中R a和R c一起是在末端键之间具有2至5个原子的桥连基团， 其中，在Y2为NRb的情况下， 残基Z3和Z4之一可以是NRd基团，其中Rb和Rd一起是在末端键之间具有2至5个原子的桥连基团。