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公开(公告)号：US07384477B2
公开(公告)日：2008-06-10
申请号：US10560581
申请日：2004-05-28
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V and a temperature gradient of the crystal is defined as G during growing the single crystal, the temperature gradient G of the crystal is controlled by changing at least two or more of pulling conditions. Thereby, there is provided a method for producing a single crystal in which when the single crystal is grown by CZ method, V/G can be controlled without lowering a pulling rate V, and thus the single crystal including a desired defect region can be produced effectively for a short time.
摘要翻译： 本发明是一种通过CZ法从室内的原料熔融物中拉出单晶的单晶的制造方法，其中，当生长单晶时，拉伸速度定义为V，晶体的温度梯度 在生长单晶时被定义为G，晶体的温度梯度G通过改变至少两个或更多个拉伸条件来控制。 因此，提供了一种单晶的制造方法，其中当通过CZ法生长单晶时，可以在不降低拉伸速度V的情况下控制V / G，从而可以产生包括所需缺陷区的单晶 有效地在短时间内。
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公开(公告)号：US06888236B2
公开(公告)日：2005-05-03
申请号：US09926464
申请日：2001-03-07
申请人： Yasuji Hiramatsu , Yasutaka Ito , Atsushi Ozaki
发明人： Yasuji Hiramatsu , Yasutaka Ito , Atsushi Ozaki
IPC分类号： C04B35/581 , C04B35/64 , H01L23/15 , H01L23/053 , C22C29/02 , H01B3/12 , H01L29/40
CPC分类号： H01L21/6831 , C04B35/581 , C04B35/64 , H01L23/15 , H01L2924/0002 , Y10T279/23 , H01L2924/00
摘要： A ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, excellent thermal shock resistivity, high thermal conductivity and an excellent temperature rising and falling properties, can be used as a hot plate, an electrostatic chuck, a wafer prober and the like. A ceramic substrate, for a semiconductor producing/examining device, having a conductor formed inside or on the surface thereof has been sintered such that a fractured section thereof exhibits intergranular fracture.
摘要翻译： 可以使用具有高断裂韧性值，优异的热冲击电阻率，高导热性和优异的升温和降温特性的半导体制造/检查装置的陶瓷基板作为热板，静电卡盘，晶片探针和 类似。 用于半导体制造/检查装置的陶瓷基板，其内部或表面上形成有导体，其断裂部分呈现晶间断裂。
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公开(公告)号：US6010568A
公开(公告)日：2000-01-04
申请号：US226106
申请日：1999-01-07
CPC分类号： C30B15/20 , C30B15/26 , Y10T117/1004 , Y10T117/1008
摘要： An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected, the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt. These operations are automatically performed.
摘要翻译： 提供一种能够自动调节熔体表面的初始位置而不需要操作者的装置和方法。 在根据CZ方法使用线作为用于生长硅等单晶的晶种的悬挂器的单晶拉拔器中，检测到晶种的参考位置，使线退缩以降低 该线材从参考位置到距离WX更高的位置，然后在所述参考位置上方向上拉，以便由于连接到其上的单晶体的重量来校正线材的延伸。 此外，将电线留在熔体上方约十分钟，以由于熔体的热量而使电线的延伸量恒定。 自动执行这些操作。
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公开(公告)号：US5413847A
公开(公告)日：1995-05-09
申请号：US38102
申请日：1993-03-30
申请人： Hajime Kishi , Atsushi Ozaki , Nobuyuki Odagiri
发明人： Hajime Kishi , Atsushi Ozaki , Nobuyuki Odagiri
CPC分类号： C08J5/24 , B29C70/025 , B29K2995/0089 , Y10S428/902 , Y10T428/2918 , Y10T428/30 , Y10T442/2082 , Y10T442/673
摘要： A prepreg and a composite prepared from the prepreg having high impact resistance, high interlayer toughness and high tensile strength are disclosed. The prepreg comprises the following elements [A], [B] and [C]:[A]: reinforcing fibers;[B]: a resin composition including a thermosetting resin and a thermoplastic resin which is soluble in said thermosetting resin, which resin composition being capable of forming a micro-phase separation structure; and[C]: fine particles which are insoluble in said element [B] and which do not contain an elastomer component;said element [C] being localized in a surface of said prepreg. The present invention also provides a composite prepared from this prepreg.
摘要翻译： 公开了一种由具有高耐冲击性，高层间韧性和高拉伸强度的预浸料制备的预浸料和复合材料。 预浸料包括以下元件[A]，[B]和[C]：[A]：增强纤维; [B]：可溶于所述热固性树脂的热固性树脂和热塑性树脂的树脂组合物，该树脂组合物能够形成微相分离结构; 和[C]：不溶于所述元素[B]并且不含弹性体组分的细颗粒; 所述元素[C]定位在所述预浸料坯的表面中。 本发明还提供了由该预浸料制备的复合材料。
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公开(公告)号：US07423032B2
公开(公告)日：2008-09-09
申请号：US10523020
申请日：2004-02-23
申请人： Atsushi Ozaki , Yosuke Maki , Osamu Sato , Yoshitaka Yamamura
发明人： Atsushi Ozaki , Yosuke Maki , Osamu Sato , Yoshitaka Yamamura
IPC分类号： A61K31/55
CPC分类号： A61K31/55
摘要： A method for treating severe heart failure, comprising administering to a patient an effective amount of a benzazepine compound (1): wherein R1 is H or halogen, R2 is OH, or —NR5R6 (R5 and R6 are H or lower alkyl, R3 is H, halogen, lower alkyl, or lower alkoxy, R4 is halogen, lower alkyl or lower alkoxy, or a salt thereof, and a pharmaceutical composition containing the benzazepine compound (1) or a salt thereof and use of the compound (1) or a salt thereof for preparing a medicament for treatment of severe heart failure
摘要翻译： 一种治疗严重心力衰竭的方法，包括向患者施用有效量的苯并氮杂化合物（1）：其中R 1为H或卤素，R 2为OH ，或-NR 5 R 6（R 5和R 6）是H或低级烷基，R SUB > 3是H，卤素，低级烷基或低级烷氧基，R 4是卤素，低级烷基或低级烷氧基或其盐，以及含有苯并氮杂化合物的药物组合物 1）或其盐和化合物（1）或其盐的用途，用于制备用于治疗严重心力衰竭的药物
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公开(公告)号：US20080214523A1
公开(公告)日：2008-09-04
申请号：US12149578
申请日：2008-05-05
申请人： Atsushi Ozaki , Yosuke Maki , Osamu Sato , Yoshitaka Yamamura
发明人： Atsushi Ozaki , Yosuke Maki , Osamu Sato , Yoshitaka Yamamura
CPC分类号： A61K31/55
摘要： A method for treating severe heart failure, comprising administering to a patient an effective amount of a benzazepine compound (1): wherein R1 is H or halogen, R2 is OH, or —NR5R6 (R5 and R6 are H or lower alkyl, R3 is H, halogen, lower alkyl, or lower alkoxy, R4 is halogen, lower alkyl or lower alkoxy, or a salt thereof, and a pharmaceutical composition containing the benzazepine compound (1) or a salt thereof and use of the compound (1) or a salt thereof for preparing a medicament for treatment of severe heart failure.
摘要翻译： 一种治疗严重心力衰竭的方法，包括向患者施用有效量的苯并氮杂化合物（1）：其中R 1为H或卤素，R 2为OH ，或-NR 5 R 6（R 5和R 6）是H或低级烷基，R SUB > 3是H，卤素，低级烷基或低级烷氧基，R 4是卤素，低级烷基或低级烷氧基或其盐，以及含有苯并氮杂化合物的药物组合物 1）或其盐和化合物（1）或其盐的用途，用于制备用于治疗严重心力衰竭的药物。
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公开(公告)号：US5876496A
公开(公告)日：1999-03-02
申请号：US827105
申请日：1997-03-17
申请人： Naoki Nagai , Chihiro Tashiro , Atsushi Ozaki , Michiaki Oda
发明人： Naoki Nagai , Chihiro Tashiro , Atsushi Ozaki , Michiaki Oda
CPC分类号： C30B15/02 , Y10T117/1056 , Y10T117/1064
摘要： A feeding reservoir 11 for intermittently or continuously feeding granular raw material into a pulling apparatus 1, a chamber 13 connected to the feeding reservoir 11 through a gate valve 12, a granular raw material supply section 15 by which the granular raw material is supplied to the chamber 13 through a gate valve 14 and a pressure adjustment means 20 which adjusts the inner pressure of the chamber 13 is provided, and the granular raw material is fed to the feeding reservoir 11 while maintaining the inner pressure of the feeding reservoir 11 as the same as the inner pressure of the single crystal pulling apparatus 1. This feeding method and structure makes it possible to feed an additional amount of granular raw material even during the continuous charging process and or the recharging process without interrupting the process and also to pull a heavy single crystal rod with a large diameter without increasing the capacity of the feeding reservoir.
摘要翻译： 用于将颗粒状原料间歇地或连续地供给到牵引装置1的供给储存器11，通过闸阀12连接到供给储存器11的室13，粒状原料供给部15，向颗粒状原料供给部 设置通过闸阀14的室13和调节室13的内部压力的压力调节装置20，并且将颗粒状原料供给到供给储存器11，同时保持供给储存器11的内部压力相同 作为单晶拉制装置1的内压。该供给方法和结构使得即使在连续充电过程和充电过程中也可以不间断地进行加工而再次加入附加量的颗粒状原料 单晶棒直径大，不增加供料槽的容量。
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公开(公告)号：US5851286A
公开(公告)日：1998-12-22
申请号：US763888
申请日：1996-12-11
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1004 , Y10T117/1008
摘要： A crystal pulling apparatus is disclosed which employs the Czochralski method. The crystal pulling apparatus is operated while a heater for heating a material melt in a crucible is controlled by the main controller of a main system. When maintenance of a heating state is disabled for some reason, a relay of a signal changeover circuit is switched so as to maintain the heating state under control of the backup controller of a backup system, thereby maintaining the material melt in a molten state. Thus, even when it becomes impossible for the main system to heat the material melt within the crucible, the material melt can be prevented from becoming solidified.
摘要翻译： 公开了采用Czochralski法的晶体拉制装置。 在通过主系统的主控制器控制用于加热坩埚中的材料熔化的加热器的同时操作晶体拉制装置。 当由于某种原因禁用加热状态的维持时，切换信号切换电路的继电器，以便在备用系统的备用控制器的控制下保持加热状态，从而将材料熔体保持在熔融状态。 因此，即使主体系不可能在坩埚内加热材料熔融物，也可以防止材料熔融变得凝固。
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公开(公告)号：US07226507B2
公开(公告)日：2007-06-05
申请号：US10561865
申请日：2004-05-27
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.
摘要翻译： 本发明是一种单晶的制造方法，其中，通过Czochralski法从室内的原料熔融物中拉出单晶，其径向全平面为无缺陷区域，其中拉拔条件发生变化 拉伸单晶时的晶体生长轴的方向，使得拉伸速度的余量总是预先确定的值以上，使得整个平面在径向方向上的单晶是无缺陷区域。 因此，可以提供一种单晶的制造方法，其中当通过CZ法制造单晶时，其整个平面在径向方向上的无缺陷区域的单晶完全在晶体的方向上 生长轴可以稳定地生产。
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公开(公告)号：US20070017433A1
公开(公告)日：2007-01-25
申请号：US10560581
申请日：2004-05-28
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V and a temperature gradient of the crystal is defined as G during growing the single crystal, the temperature gradient G of the crystal is controlled by changing at least two or more of pulling conditions including a diameter of the straight body of the single crystal, a rotation rate of the single crystal during pulling the single crystal, a flow rate of an inert-gas introduced into the chamber, a position of a heater heating the raw material melt and a distance between the melt surface of the raw material melt and a heat insulating member provided in the chamber so as to oppose to the surface of the raw material melt, thereby V/G which is a ratio of the pulling rate V and the temperature gradient G of the crystal is controlled so that a single crystal including a desired defect region is grown. Thereby, there is provided a method for producing a single crystal in which when the single crystal is grown by CZ method, V/G can be controlled without lowering a pulling rate V, and thus the single crystal including a desired defect region can be produced effectively for a short time.
摘要翻译： 本发明是一种通过CZ法从室内的原料熔融物中拉出单晶的单晶的制造方法，其中，当生长单晶时，拉伸速度定义为V，晶体的温度梯度 在生长单晶时被定义为G，通过改变至少两个或更多个拉丝条件来控制晶体的温度梯度G，所述拉伸条件包括单晶直直体的直径，拉伸期间单晶的旋转速率 单晶，引入到室中的惰性气体的流量，加热原料熔体的加热器的位置以及原料熔体的熔融表面与设置在室中的绝热构件之间的距离，以便 与原料熔体的表面相对，从而控制作为晶体的拉伸速度V与温度梯度G的比的V / G，使得包含 生长期望的缺陷区域。 因此，提供了一种单晶的制造方法，其中当通过CZ法生长单晶时，可以在不降低拉伸速度V的情况下控制V / G，从而可以产生包含所需缺陷区的单晶 有效地在短时间内。
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