MAGNETORESISTANCE ELEMENT, MRAM, AND INITIALIZATION METHOD FOR MAGNETORESISTANCE ELEMENT
    11.
    发明申请
    MAGNETORESISTANCE ELEMENT, MRAM, AND INITIALIZATION METHOD FOR MAGNETORESISTANCE ELEMENT 有权
    磁阻元件MRAM和磁化元件的初始化方法

    公开(公告)号:US20110188298A1

    公开(公告)日:2011-08-04

    申请号:US13062764

    申请日:2009-10-16

    IPC分类号: G11C11/00 H01L29/82

    摘要: A magnetoresistance element is provided with: a magnetization recording layer that is a ferromagnetic layer. The magnetization recording layer includes: a magnetization reversal region having a reversible magnetization; a first magnetization fixed region connected to a first boundary of the magnetization reversal region and having a magnetization direction fixed in a first direction; and a second magnetization fixed region connected to a second boundary of the magnetization reversal region and having a magnetization direction fixed in a second direction. At least one magnetization reversal facilitation structure which is a structure in which a magnetization is reversed more easily than the remaining portion is provided for a portion of the second magnetization fixed region.

    摘要翻译: 磁阻元件具有:作为铁磁层的磁化记录层。 磁化记录层包括:具有可逆磁化强度的磁化反转区域; 第一磁化固定区域,其连接到所述磁化反转区域的第一边界并且具有沿第一方向固定的磁化方向; 以及连接到所述磁化反转区域的第二边界并且具有沿第二方向固定的磁化方向的第二磁化固定区域。 对于第二磁化固定区域的一部分,提供了至少一个磁化反转促进结构,其是磁化反转比剩余部分更容易的结构。

    Magnetic head using a magnetoresistance effect based on ferromagnetic junction, and magnetic recording/reproducing apparatus using the same
    18.
    发明授权
    Magnetic head using a magnetoresistance effect based on ferromagnetic junction, and magnetic recording/reproducing apparatus using the same 有权
    使用基于铁磁结的磁阻效应的磁头和使用该磁头的磁记录/再现装置

    公开(公告)号:US06671140B1

    公开(公告)日:2003-12-30

    申请号:US09576775

    申请日:2000-05-23

    申请人: Nobuyuki Ishiwata

    发明人: Nobuyuki Ishiwata

    IPC分类号: G11B5139

    摘要: A first magnetic layer (3) is laminated on a magnetic yoke film (2) forming a closed magnetic circuit containing a magnetic gap so as to be magnetically coupled to the magnetic yoke film (2), and a magnetic separation layer (4), a second magnetic layer (5) and an antiferromagnetic layer (6) are laminated on the first magnetic layer (3). Further, a pair of electrodes (1, 7) are formed so that the laminate comprising the above layers is sandwiched between the electrodes. A permanent magnet film 8 is disposed to apply a bias magnetic field to the first magnetic layer (3). The magnetic separation layer (4) is formed of an insulator. Tunnel current is made to flow between the electrodes (1, 7) through the magnetic separation layer (4), and magnetic signals in the magnetic yoke film (2) are detected by using the antiferromagnetic tunnel magnetoresistance effect that the tunnel current is varied in accordance with variation of the difference in the magnetization direction between the first magnetic layer (3) and the second magnetic layer (5).

    摘要翻译: 第一磁性层(3)层压在磁轭膜(2)上,形成包含磁隙的闭合磁路以与磁轭膜(2)磁耦合,以及磁分离层(4), 在第一磁性层(3)上层叠第二磁性层(5)和反铁磁性层(6)。 此外,形成一对电极(1,7),使得包含上述层的层压体夹在电极之间。 设置永磁体膜8以向第一磁性层(3)施加偏置磁场。 磁分离层(4)由绝缘体形成。 使隧道电流通过磁分离层(4)在电极(1,7)之间流动,并且通过使用隧道电流变化的反铁磁隧道磁阻效应来检测磁轭膜(2)中的磁信号 根据第一磁性层(3)和第二磁性层(5)之间的磁化方向的差异的变化。

    Magnetoresistive effect composite head having a pole containing Co-M
    19.
    发明授权
    Magnetoresistive effect composite head having a pole containing Co-M 失效
    具有包含Co-M的极的磁阻效应复合头

    公开(公告)号:US6125009A

    公开(公告)日:2000-09-26

    申请号:US979179

    申请日:1997-11-26

    IPC分类号: G11B5/31 G11B5/39

    摘要: In a magnetoresistive effect composite head, magnetic shields oppose each other on a slider main body made of a ceramic material through a predetermined gap, and a magnetoresistive effect element is sandwiched and stacked between the magnetic shields with a magnetic spacer layer made of an insulator. A recording head portion uses one of the magnetic shields as a first magnetic pole, and has a second magnetic pole formed on a surface of the first magnetic pole opposite to the magnetoresistive effect element through a magnetic gap, to record information on a recording medium by means of a magnetic field generated in the magnetic gap. The magnetoresistive effect element includes a central region made of a spin-valve element to sense a medium field, and end regions for supplying a bias field and a current to the central region. The second magnetic pole is constituted by a stacked film of first and second magnetic films having different saturation magnetizations. The first and second magnetic films are close to and far from the magnetic gap, respectively. The saturation magnetization of the first magnetic film is set to a value larger than that of the second magnetic film. A method of manufacturing the above head is also disclosed.

    摘要翻译: 在磁阻效应复合头中,磁屏蔽通过预定间隙在由陶瓷材料制成的滑动器主体上彼此相对,并且磁阻效应元件被夹在磁屏蔽之间并由绝缘体制成的磁隔离层叠置在磁屏蔽之间。 记录头部分使用磁屏蔽之一作为第一磁极,并且具有通过磁隙形成在与磁阻效应元件相对的第一磁极的表面上的第二磁极,以通过磁记录介质将信息记录在记录介质上 在磁隙中产生的磁场的装置。 磁阻效应元件包括由感应中间场的自旋阀元件制成的中心区域和用于向中心区域提供偏置场和电流的端部区域。 第二磁极由具有不同饱和磁化的第一和第二磁性膜的叠层膜构成。 第一和第二磁性膜分别靠近和远离磁隙。 将第一磁性膜的饱和磁化强度设定为大于第二磁性膜的饱和磁化强度。 还公开了制造上述头的方法。

    Method for fabricating a complex magnetic head including a reproducing
magneto-resistance head
    20.
    发明授权
    Method for fabricating a complex magnetic head including a reproducing magneto-resistance head 失效
    包括再现磁阻头的复磁头的制造方法

    公开(公告)号:US6026559A

    公开(公告)日:2000-02-22

    申请号:US225000

    申请日:1999-01-04

    申请人: Nobuyuki Ishiwata

    发明人: Nobuyuki Ishiwata

    摘要: A fabrication process for a complex magnetic head having a reproducing MR head and a recording ID head comprises the steps of forming the MR head, forming an insulator film on the MR head, forming a photoresist frame on the insulator film, forming a top magnetic pole inside the photoresist frame by plating, trimming the top magnetic pole for defining the end width of the ID head while leaving the photoresist frame, and removing the photoresist frame. The photoresist frame protects the underlying films against the trimming and also protects the top magnetic pole film against an etching solution.

    摘要翻译: 具有再现MR磁头和记录ID磁头的复磁头的制造方法包括以下步骤:形成MR磁头,在MR磁头上形成绝缘体膜,在绝缘膜上形成光致抗蚀剂框架,形成顶部磁极 通过电镀在光致抗蚀剂框架内部,修剪顶部磁极以限定ID头的端部宽度,同时留下光致抗蚀剂框架,并且去除光致抗蚀剂框架。 光致抗蚀剂框架保护下面的膜免受修剪,并且还保护顶部磁极膜抵抗蚀刻溶液。