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公开(公告)号：US08565011B2
公开(公告)日：2013-10-22
申请号：US13120626
申请日：2009-10-29
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： An initialization method is provided for a magnetic memory element including: a data recording layer having perpendicular magnetic anisotropy which includes: a first magnetization fixed region, a second magnetization fixed region, and a magnetization free region coupled to the first magnetization fixed region and the second magnetization fixed region, the data recording layer being structure so that the coercive force of the first magnetization fixed region being different from that of the second magnetization fixed region. The initialization method includes steps of: directing the magnetizations of the first magnetization fixed region, the second magnetization fixed region and the magnetization free region in the same direction; and applying a magnetic field having both components perpendicular to and parallel to the magnetic anisotropy of the data recording layer to the data recording layer.
摘要翻译： 提供了一种用于磁存储元件的初始化方法，包括：具有垂直磁各向异性的数据记录层，其包括：第一磁化固定区域，第二磁化固定区域和耦合到第一磁化固定区域的无磁化区域， 磁化固定区域，数据记录层的结构使得第一磁化固定区域的矫顽力与第二磁化固定区域的矫顽力不同。 该初始化方法包括以下步骤：将第一磁化固定区域，第二磁化固定区域和无磁化区域的磁化指向相同方向; 以及将具有与数据记录层的磁各向异性垂直并平行的两个分量的磁场施加到数据记录层。
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公开(公告)号：US08559214B2
公开(公告)日：2013-10-15
申请号：US13139604
申请日：2009-12-24
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C19/0808 , G11C19/0841 , H01L27/228
摘要： A magnetic memory cell is provided with a magnetization record layer and a magnetic tunnel junction section. The magnetization record layer is a ferromagnetic layer having a perpendicular magnetic anisotropy. The magnetic tunnel junction section is used to read data from the magnetization record layer. The magnetization record layer has a plurality of domain wall motion regions.
摘要翻译： 磁存储单元设置有磁化记录层和磁性隧道结段。 磁化记录层是具有垂直磁各向异性的铁磁层。 磁性隧道结部分用于从磁化记录层读取数据。 磁化记录层具有多个畴壁运动区域。
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公开(公告)号：US08547733B2
公开(公告)日：2013-10-01
申请号：US13590634
申请日：2012-08-21
IPC分类号： G11C11/15
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L23/367 , H01L27/222 , H01L43/08 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00
摘要： A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.
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公开(公告)号：US20120278582A1
公开(公告)日：2012-11-01
申请号：US13504071
申请日：2010-10-21
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/5607 , G11C19/0808 , G11C2013/0083 , H01L27/228
摘要： A magnetic memory element includes: a first magnetization free layer; a non-magnetic layer; a reference layer; a first magnetization fixed layer group; and a first blocking layer. The first magnetization free layer is composed of ferromagnetic material with perpendicular magnetic anisotropy and includes a first magnetization fixed region, a second magnetization fixed region and a magnetization free region. The non-magnetic layer is provided near the first magnetization free layer. The reference layer is composed of ferromagnetic material and provided on the non-magnetic layer. The first magnetization fixed layer group is provided near the first magnetization fixed region. The first blocking layer is provided being sandwiched between the first magnetization fixed layer group and the first magnetization fixed region or in the first magnetization fixed layer group.
摘要翻译： 磁存储元件包括：第一磁化自由层; 非磁性层; 参考层; 第一磁化固定层组; 和第一阻挡层。 第一磁化自由层由具有垂直磁各向异性的铁磁材料组成，并且包括第一磁化固定区域，第二磁化固定区域和无磁化区域。 非磁性层设置在第一磁化自由层附近。 参考层由铁磁材料组成并设置在非磁性层上。 第一磁化固定层组设置在第一磁化固定区附近。 第一阻挡层被设置在第一磁化固定层组和第一磁化固定区之间或第一磁化固定层组中。
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公开(公告)号：US08174873B2
公开(公告)日：2012-05-08
申请号：US12863740
申请日：2008-12-10
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A domain wall motion type MRAM has: a magnetic recording layer 10 having perpendicular magnetic anisotropy; and a pair of terminals 51 and 52 used for supplying a current to the magnetic recording layer 10. The magnetic recording layer 10 has: a first magnetization region 11 connected to one of the pair of terminals; a second magnetization region 12 connected to the other of the pair of terminals; and a magnetization switching region 13 connecting between the first magnetization region 11 and the second magnetization region 12 and having reversible magnetization. A first pinning site PS1, by which the domain wall is trapped, is formed at a boundary between the first magnetization region 11 and the magnetization switching region 13. A second pinning site PS2, by which the domain wall is trapped, is formed at a boundary between the second magnetization region 12 and the magnetization switching region 13. A third pinning site PS3, by which the domain wall is trapped, is formed within the first magnetization region 11.
摘要翻译： 畴壁运动型MRAM具有：具有垂直磁各向异性的磁记录层10; 以及用于向磁记录层10提供电流的一对端子51和52.磁记录层10具有：连接到该对端子之一的第一磁化区域11; 连接到所述一对端子中的另一个的第二磁化区域12; 以及连接在第一磁化区域11和第二磁化区域12之间并具有可逆磁化强度的磁化开关区域13。 在第一磁化区域11和磁化转换区域13之间的边界处形成第一钉住位置PS1（通过该区域壁被捕获）。在第一磁化区域11和磁化转换区域13之间的边界处形成第二钉扎位置PS1 第二磁化区域12和磁化转换区域13之间的边界。在第一磁化区域11内形成有第三钉扎位置PS3，畴壁被捕获。
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公开(公告)号：US08174086B2
公开(公告)日：2012-05-08
申请号：US12739990
申请日：2008-10-28
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808 , H01L27/228
摘要： A magnetoresistive element is provided with a first magnetization free layer; a second magnetization free layer; a non-magnetic layer disposed adjacent to the second magnetization free layer; and a first magnetization fixed layer disposed adjacent to the second magnetization free layer on an opposite side of the second magnetization free layer. The first magnetization free layer is formed of ferromagnetic material and has a magnetic anisotropy in a thickness direction. On the other hand, the second magnetization free layer and the first magnetization fixed layer are formed of ferromagnetic material and have a magnetic anisotropy in an in-plane direction. The first magnetization free layer includes: a first magnetization fixed region having a fixed magnetization; a second magnetization fixed region having a fixed magnetization; and a magnetization free region connected to the first and second magnetization fixed regions and having a reversible magnetization. The magnetization free region and the second magnetization free layer are magnetically coupled. In addition, the center of mass of the magnetization free region and the center of mass of the second magnetization free layer are displaced in a particular in-plane direction.
摘要翻译： 磁阻元件设置有第一磁化自由层; 第二磁化自由层; 邻近所述第二磁化自由层设置的非磁性层; 以及在所述第二磁化自由层的相对侧上邻近所述第二磁化自由层设置的第一磁化固定层。 第一磁化自由层由铁磁材料形成，并且在厚度方向上具有磁各向异性。 另一方面，第二磁化自由层和第一磁化固定层由铁磁材料形成，并且在面内方向上具有磁各向异性。 第一磁化自由层包括：具有固定磁化强度的第一磁化固定区; 具有固定磁化强度的第二磁化固定区域; 以及与第一和第二磁化固定区域连接并具有可逆磁化强度的无磁化区域。 磁化自由区和第二磁化自由层磁耦合。 此外，无磁化区域的质心和第二磁化自由层的质心在特定的面内方向上移位。
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公开(公告)号：US08159872B2
公开(公告)日：2012-04-17
申请号：US12865197
申请日：2009-01-09
IPC分类号： G11C11/15
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/222 , Y10S977/933 , Y10S977/935
摘要： An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization fixed layer, a first magnetization free layer, a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer, a second magnetization fixed layer, a second magnetization free layer and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer. The first magnetization fixed layer and the first magnetization free layer have perpendicular magnetic anisotropy, and the second magnetization fixed layer and the second magnetization free layer have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other. Center of the second magnetization free layer is displaced in a first direction from center of the first magnetization free layer in a plane parallel to each layer. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a third magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a third nonmagnetic layer sandwiched between the third magnetization fixed layer and the third magnetization free layer. The third magnetization fixed layer and the third magnetization free layer have in-plane magnetic anisotropy.
摘要翻译： MRAM具有：包括第一磁阻元件的存储单元; 以及包括第二磁阻元件的参考单元。 第一磁阻元件具有第一磁化固定层，第一磁化自由层，夹在第一磁化固定层和第一磁化自由层之间的第一非磁性层，第二磁化固定层，第二磁化自由层和第二非磁性层 层夹在第二磁化固定层和第二磁化自由层之间。 第一磁化固定层和第一磁化自由层具有垂直的磁各向异性，第二磁化固定层和第二磁化自由层具有面内磁各向异性。 第一磁化自由层和第二磁化自由层彼此磁耦合。 第二磁化自由层的中心在与第一磁化自由层的平行于每个层的平面中的第一方向上位移。 而第二磁阻元件具有：其易磁化轴平行于第二方向的第三磁化自由层; 第三磁化固定层，其磁化方向在与第二方向垂直的第三方向上固定; 以及夹在第三磁化固定层和第三磁化自由层之间的第三非磁性层。 第三磁化固定层和第三磁化自由层具有面内磁各向异性。
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公开(公告)号：US08149615B2
公开(公告)日：2012-04-03
申请号：US12865194
申请日：2009-01-09
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/222
摘要： An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization free layer, a first magnetization fixed layer, a second magnetization free layer and a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the second magnetization free layer. The first magnetization free layer has: first and second magnetization fixed regions; and a magnetization free region. The magnetization free region and the second magnetization free layer are magnetically coupled to each other. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a second magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the third magnetization free layer.
摘要翻译： MRAM具有：包括第一磁阻元件的存储单元; 以及包括第二磁阻元件的参考单元。 第一磁阻元件具有第一磁化自由层，第一磁化固定层，第二磁化自由层和夹在第一磁化固定层和第二磁化自由层之间的第一非磁性层。 第一磁化自由层具有：第一和第二磁化固定区域; 和无磁化区域。 磁化自由区和第二磁化自由层彼此磁耦合。 而第二磁阻元件具有：其易磁化轴平行于第二方向的第三磁化自由层; 第二磁化固定层，其磁化方向在与第二方向垂直的第三方向上固定; 以及夹在第二磁化固定层和第三磁化自由层之间的第二非磁性层。
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公开(公告)号：US20110292718A1
公开(公告)日：2011-12-01
申请号：US13144480
申请日：2010-01-21
申请人： Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Noburu Sakimura , Ryusuke Nebashi
发明人： Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Noburu Sakimura , Ryusuke Nebashi
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/5607 , H01L43/08 , H03K19/1776 , H03K19/1778 , H03K19/18 , H03K19/20
摘要： A non-volatile logic circuit includes an input section, a control section and an output section. The input section has perpendicular magnetic anisotropy and has a ferromagnetic layer whose magnetization state is changeable. The control section includes a ferromagnetic layer. The output section is provided in a neighborhood of the input section and the control section and includes a magnetic tunnel junction element whose magnetization state is changeable. The magnetization state of the input section is changed based on the magnetization state. A magnetization state of the magnetic tunnel junction element of the output section which state is changed based on the magnetization state of the ferromagnetic material of the control section and the magnetization state of the ferromagnetic material of the input section.
摘要翻译： 非易失性逻辑电路包括输入部分，控制部分和输出部分。 输入部具有垂直的磁各向异性，并具有磁化状态可变的铁磁层。 控制部分包括铁磁层。 输出部分设置在输入部分和控制部分的附近，并且包括磁化状态可变的磁性隧道结元件。 基于磁化状态改变输入部的磁化状态。 输出部分的磁性隧道结元件的磁化状态基于控制部分的铁磁材料的磁化状态和输入部分的铁磁材料的磁化状态而改变。
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公开(公告)号：US20110267879A1
公开(公告)日：2011-11-03
申请号：US13139607
申请日：2009-12-24
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A magnetic memory cell includes: a magnetization recording layer; and a magnetic tunneling junction section. The magnetization recording layer includes a ferromagnetic layer with perpendicular magnetic anisotropy. The magnetic tunneling junction section is used for reading information in the magnetization recording layer. The magnetization recording layer includes two domain wall moving areas.
摘要翻译： 磁存储单元包括：磁化记录层; 和磁性隧道接合部分。 磁化记录层包括具有垂直磁各向异性的铁磁层。 磁性隧道结部分用于读取磁化记录层中的信息。 磁化记录层包括两个畴壁移动区域。
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