公开(公告)号：US06610920B2

公开(公告)日：2003-08-26

申请号：US09965449

申请日：2001-09-26

申请人： Shin Sugawara ,  Takeshi Kyoda ,  Hisao Arimune

发明人： Shin Sugawara ,  Takeshi Kyoda ,  Hisao Arimune

IPC分类号： H01L310256

CPC分类号： C30B29/60 ,  C01B33/021 ,  C30B29/06 ,  C30B30/08 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Plasma is generated from a plasma generating gas comprising an inert gas and hydrogen gas. Silicon material is passed through the plasma and heated so as to form a crystalline silicon particle containing hydrogen at a concentration of 1×1016-1×1020. A great number of the crystalline silicon particles of p-type or n-type are deposited on a substrate as the electrode of one side. An insulator is formed among the crystalline silicon particles on the substrate, and a n-type or p-type semiconductor layer is formed over the crystalline silicon particles, thereby fabricating a photoelectric conversion device. The photoelectric conversion device using the crystalline silicon particles exhibits high photoelectric conversion efficiency.

摘要翻译： 从包含惰性气体和氢气的等离子体产生气体产生等离子体。 将硅材料通过等离子体并加热，以形成浓度为1×10 16 -1×10 20的含氢的结晶硅颗粒。 大量的p型或n型晶体硅颗粒作为一侧的电极沉积在基板上。 在基板上的结晶硅颗粒之间形成绝缘体，在结晶硅颗粒上形成n型或p型半导体层，由此制造光电转换装置。 使用结晶硅粒子的光电转换装置具有高的光电转换效率。

公开(公告)号：US06620996B2

公开(公告)日：2003-09-16

申请号：US09866069

申请日：2001-05-25

申请人： Shin Sugawara ,  Takeshi Kyoda ,  Hisao Arimune

发明人： Shin Sugawara ,  Takeshi Kyoda ,  Hisao Arimune

IPC分类号： H01L310352

CPC分类号： H01L31/0384 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0747 ,  Y02E10/50

摘要： An insulator is formed on a substrate, on which numerous first conductivity-type crystalline semiconductor particles are deposited on and brought into contact with the substrate. A second conductivity-type semiconductor layer for forming a PN-junction between the layer and the crystalline semiconductor particles is formed over the crystalline semiconductor particles and the insulator. The second conductivity-type semiconductor layer comprises a semiconductor layer including a crystalline semiconductor and an amorphous semiconductor in a mixed manner.

公开(公告)号：US06437234B1

公开(公告)日：2002-08-20

申请号：US09917140

申请日：2001-07-26

申请人： Takeshi Kyoda ,  Shin Sugawara ,  Hisao Arimune

发明人： Takeshi Kyoda ,  Shin Sugawara ,  Hisao Arimune

IPC分类号： H01L310352

CPC分类号： H01L31/03921 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0747 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： A method of manufacturing a photoelectric conversion device according to the present invention comprises the steps of: applying numerous glass particles having a particle size before baking being 5 to 25% of that of crystalline semiconductor particles to a substrate having an electrode of one side; depositing the crystalline semiconductor particles on the layer of the glass particles; pressing the crystalline semiconductor particles against the substrate; and subjecting them to baking, whereby manufacturing a photoelectric conversion device in which the crystalline semiconductor particles and the substrate have been joined together as well as an insulator has been interposed among the crystalline semiconductor particles. Accordingly, the photoelectric conversion device has good conversion efficiency and is manufactured at a low cost.

摘要翻译： 根据本发明的光电转换装置的制造方法包括以下步骤：将具有结晶半导体颗粒的5〜25％的烘烤前的粒径的多个玻璃粒子涂布到具有一面电极的基板上; 将晶体半导体颗粒沉积在玻璃颗粒层上; 将晶体半导体颗粒压在衬底上; 并对其进行烘烤，由此制造结晶半导体颗粒和基板已经接合在一起的光电转换装置以及绝缘体已经插入在结晶半导体颗粒中。 因此，光电转换装置具有良好的转换效率并以低成本制造。

公开(公告)号：US20060118898A1

公开(公告)日：2006-06-08

申请号：US11283609

申请日：2005-11-17

申请人： Kouichi Uchimoto ,  Jun Fukuda ,  Hideki Hakuma ,  Shin Sugawara ,  Hisao Arimune

发明人： Kouichi Uchimoto ,  Jun Fukuda ,  Hideki Hakuma ,  Shin Sugawara ,  Hisao Arimune

IPC分类号： H01L31/06

CPC分类号： H01L31/1804 ,  H01L31/02167 ,  H01L31/0288 ,  H01L31/035281 ,  H01L31/03529 ,  Y02E10/547 ,  Y02P70/521

摘要： Disclosed is a photoelectric conversion device in which a plurality of p-type crystal semiconductor particles 4 are joined to one main surface of a conductive substrate 2. A boron concentration in a junction of a lower part of each of the p-type crystal semiconductor particles 4 with the conductive substrate 2 is higher than a boron concentration in a portion, other than the junction, of the p-type crystal semiconductor particle 4. The junction is a p+ layer having a high impurity concentration. The p+ layer allows p-type carriers to be collected, thereby making it possible to improve a BFS effect.

摘要翻译： 公开了一种光电转换装置，其中多个p型晶体半导体颗粒4接合到导电基板2的一个主表面。每个p型晶体半导体颗粒的下部的接合中的硼浓度 导电性基板2的厚度比p型结晶半导体粒子4以外的部分的硼浓度高。结是具有高杂质浓度的p +层。 p +层允许收集p型载体，从而可以提高BFS效应。

公开(公告)号：US20130247964A1

公开(公告)日：2013-09-26

申请号：US13990720

申请日：2011-11-29

申请人： Yosuke Inomata ,  Masahiro Yokota ,  Shintaro Mitsuno ,  Norihiko Matsushima ,  Hisao Arimune

发明人： Yosuke Inomata ,  Masahiro Yokota ,  Shintaro Mitsuno ,  Norihiko Matsushima ,  Hisao Arimune

IPC分类号： H01L31/048

CPC分类号： H01L31/0463 ,  H01L31/0201 ,  H01L31/02013 ,  H01L31/046 ,  H01L31/048 ,  H02S40/34 ,  Y02E10/50

摘要： A photoelectric conversion module is disclosed. The photoelectric conversion module includes a photoelectric conversion panel and a moisture barrier plate. The photoelectric conversion panel includes first and second surfaces, a photoelectric converter between the first and second surfaces, and a conductive lead. An opening is located on the first surface. The moisture barrier plate is located on the second surface and includes first and second principal surfaces, and a through-hole extending from the first principal surface to the second principal surface. The moisture barrier plate covers the one principal surface. The through-hole does not overlap the opening. A filling member is located in a gap between the first surface and the first principal surface. The conductive lead goes through a part of the filling member, and has an end electrically coupled to the photoelectric converter and the other end coming out through the opening to the exterior.

摘要翻译： 公开了一种光电转换模块。 光电转换模块包括光电转换面板和防潮板。 光电转换面板包括第一表面和第二表面，第一表面和第二表面之间的光电转换器和导电引线。 一个开口位于第一个表面上。 防潮板位于第二表面上并且包括第一和第二主表面以及从第一主表面延伸到第二主表面的通孔。 防潮板覆盖一个主表面。 通孔不与开口重叠。 填充构件位于第一表面和第一主表面之间的间隙中。 导电引线穿过填充构件的一部分，并且具有电耦合到光电转换器的端部，另一端通过开口到达外部。

公开(公告)号：US20120174957A1

公开(公告)日：2012-07-12

申请号：US13133138

申请日：2010-09-29

申请人： Daisuke Nishimura ,  Toshifumi Sugawara ,  Ken Nishiura ,  Norihiko Matsushima ,  Yosuke Inomata ,  Hisao Arimune ,  Tsuyoshi Uesugi

发明人： Daisuke Nishimura ,  Toshifumi Sugawara ,  Ken Nishiura ,  Norihiko Matsushima ,  Yosuke Inomata ,  Hisao Arimune ,  Tsuyoshi Uesugi

IPC分类号： H01L31/042 ,  H01L31/0264

CPC分类号： H01L31/022425 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： To provide a photoelectric conversion device having a high photoelectric conversion efficiency, a photoelectric conversion device 21 includes a substrate 1, a plurality of lower electrodes 2 on the substrate 1 comprising a metal element, a plurality of photoelectric conversion layers 33 comprising a chalcogen compound semiconductor formed on the plurality of lower electrodes 2 and separated from one another on the lower electrodes 2, a metal-chalcogen compound layer 8 comprising the metal element and a chalcogen element included in the chalcogen compound semiconductor formed between the lower electrode 2 and the photoelectric conversion layer 33, an upper electrode 5 formed on the photoelectric conversion layer 33, and a connection conductor 7 electrically connecting, in a plurality of the photoelectric conversion layers 33, the upper electrode 5 to the lower electrode 2 without interposition of the metal-chalcogen compound layer 8.

摘要翻译： 为了提供具有高光电转换效率的光电转换装置，光电转换装置21包括基板1，包括金属元件的基板1上的多个下电极2，包括硫属化合物半导体的多个光电转换层33 形成在多个下电极2上并在下电极2上彼此分离，包括金属元素化合物层8和包含在下电极2和光电转换器之间的硫属化合物半导体中的硫属元素 层33，形成在光电转换层33上的上电极5和连接导体7，在多个光电转换层33中电连接上电极5与下电极2而不插入金属 - 硫属化合物 第8层。

公开(公告)号：US4751142A

公开(公告)日：1988-06-14

申请号：US908272

申请日：1986-09-17

申请人： Hisao Arimune ,  Mitsuo Miyazaki ,  Takashi Maeda

发明人： Hisao Arimune ,  Mitsuo Miyazaki ,  Takashi Maeda

IPC分类号： G11B11/105 ,  G11B7/24

CPC分类号： G11B11/10586 ,  Y10S428/90 ,  Y10T428/265

摘要： Disclosed is a magneto-optical recording element comprising a magnetic film composed of an alloy having a composition represented by the following formula:(Gd.sub.y Dy.sub.1-y).sub.x Fe.sub.1-x (0.15.ltoreq.x.ltoreq.0.35 and 0.30.ltoreq.y.ltoreq.0.95)This magnetic film is characterized in that the nuclear magnetic field, coercive force and saturation magnetic filed in the Kerr hysteresis loop are substantially same at temperatures higher than 100.degree. C.

摘要翻译： 公开了一种磁光记录元件，其包括由具有由下式表示的组成的合金构成的磁性膜：（GdyDy1-y）xFe1-x（0.15≤x≤0.35和0.30

公开(公告)号：US4645722A

公开(公告)日：1987-02-24

申请号：US653724

申请日：1984-09-21

申请人： Toshikazu Katayama ,  Tsugio Shibata ,  Hisao Arimune

发明人： Toshikazu Katayama ,  Tsugio Shibata ,  Hisao Arimune

IPC分类号： G11B11/10 ,  G03G5/16 ,  G11B5/66 ,  G11B11/105 ,  G11B7/24

CPC分类号： G03G5/16 ,  G11B11/10586 ,  G11B11/10591 ,  G11B5/66 ,  Y10S428/90 ,  Y10S428/928

摘要： A recording medium suitable for use in a photo-thermo-magnetic memory of high density recording, including a substrate; a first magnetic layer, such as an amorphous TbFe film, which has a large coercive force and whose axis of easy magnetization is oriented in the direction perpendicular to the surface of the first layer; and a second magnetic layer, such as an amorphous GdTbCoFe film, having (i) a larger polar Kerr rotation or reflection than that of the first layer, (ii) the same polarity of polar Kerr rotation as that of the first layer, (iii) a direction of its magnetic moment aligned in parallel with that of the first layer and (iv) a thickness permitting the transmittance of a light, such as laser beam, therethrough and being magnetically coupled with the first layer by an exchange interaction therebetween; the first and second magnetic layers being superimposed on the substrate in that order or in the inverse order. Such a recording medium can be suitably prepared by re-sputtering or ion-bombardment techniques.

摘要翻译： 一种适用于高密度记录光热存储器的记录媒体，包括基片; 诸如非晶形TbFe膜的第一磁性层，其具有较大的矫顽力，并且易磁化的轴在垂直于第一层的表面的方向上取向; 以及具有（i）比第一层的极性克尔旋转或反射更大的极性克尔旋转或反射的第二磁性层，例如非晶GdTbCoFe膜，（ii）与第一层相同的极性克尔旋转极性，（iii ）其磁矩的方向与第一层的平行方向平行;以及（iv）允许诸如激光束之类的光的透射的厚度，并通过它们之间的交换相互作用与第一层磁耦合; 第一和第二磁性层按照该顺序或以相反的顺序重叠在基板上。 这样的记录介质可以通过再溅射或离子轰击技术适当地制备。

公开(公告)号：US20120006389A1

公开(公告)日：2012-01-12

申请号：US13256902

申请日：2010-06-29

申请人： Norihiko Matsushima ,  Daisuke Nishimura ,  Atsuo Hatate ,  Takeshi Ohkuma ,  Hisao Arimune ,  Yukari Hashimoto

发明人： Norihiko Matsushima ,  Daisuke Nishimura ,  Atsuo Hatate ,  Takeshi Ohkuma ,  Hisao Arimune ,  Yukari Hashimoto

IPC分类号： H01L31/02 ,  H01L31/18

CPC分类号： H01L31/1868 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T29/5313

摘要： An embodiment of a method of manufacturing a photoelectric conversion device according to the present invention includes specifying a spot having an abnormal physical property in a structure comprising a photoelectric conversion member, including a semiconductor layer, between a pair of first and second electrodes, and isolating the spot having an abnormal physical property through mechanical scribing.

摘要翻译： 根据本发明的制造光电转换装置的方法的实施例包括在包括半导体层的光电转换构件的结构中指定在一对第一和第二电极之间具有异常物理特性的点，并且隔离 通过机械划线具有异常物理特性的现场。

公开(公告)号：US20110174373A1

公开(公告)日：2011-07-21

申请号：US13120145

申请日：2010-01-28

申请人： Atsuo Hatate ,  Hisao Arimune

发明人： Atsuo Hatate ,  Hisao Arimune

IPC分类号： H01L31/0224

CPC分类号： H01L31/022433 ,  H01L31/046 ,  H01L31/0475 ,  H01L31/0749 ,  Y02E10/541

摘要： A photoelectric conversion cell includes: first and second electrode layers spaced apart from each other; a first semiconductor layer of a first conductivity type provided on the first electrode layer; a second semiconductor layer of a second conductivity type provided on the first semiconductor layer, the second semiconductor layer forming a pn junction with the first semiconductor layer; a connecting portion for electrically connecting the second semiconductor layer and the second electrode layer; and a plurality of collector electrodes each with a linear portion and a projecting portion, the linear portion extending on the second semiconductor layer from a position above the connecting portion toward an end of the second semiconductor layer, the projecting portion overlapping at least partially the connecting portion in top perspective view, while projecting from at least one of opposite ends of the linear portion in its shorter side direction. In two adjacent ones of the plurality of collector electrodes, the projecting portions of the adjacent collector electrodes are spaced apart from each other.

摘要翻译： 光电转换单元包括：彼此间隔开的第一和第二电极层; 设置在第一电极层上的第一导电类型的第一半导体层; 设置在所述第一半导体层上的第二导电类型的第二半导体层，所述第二半导体层与所述第一半导体层形成pn结; 用于电连接第二半导体层和第二电极层的连接部分; 以及多个集电极，每个具有直线部分和突出部分，所述线性部分从所述连接部分上方的位置朝向所述第二半导体层的端部延伸到所述第二半导体层上，所述突出部分至少部分地重叠连接 同时从直线部分的相对端部中的至少一个沿其较短的侧向突出。 在多个集电极中的两个相邻的集电极中，相邻集电极的突出部彼此间隔开。