公开(公告)号：US20120006389A1

公开(公告)日：2012-01-12

申请号：US13256902

申请日：2010-06-29

申请人： Norihiko Matsushima ,  Daisuke Nishimura ,  Atsuo Hatate ,  Takeshi Ohkuma ,  Hisao Arimune ,  Yukari Hashimoto

发明人： Norihiko Matsushima ,  Daisuke Nishimura ,  Atsuo Hatate ,  Takeshi Ohkuma ,  Hisao Arimune ,  Yukari Hashimoto

IPC分类号： H01L31/02 ,  H01L31/18

CPC分类号： H01L31/1868 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T29/5313

摘要： An embodiment of a method of manufacturing a photoelectric conversion device according to the present invention includes specifying a spot having an abnormal physical property in a structure comprising a photoelectric conversion member, including a semiconductor layer, between a pair of first and second electrodes, and isolating the spot having an abnormal physical property through mechanical scribing.

摘要翻译： 根据本发明的制造光电转换装置的方法的实施例包括在包括半导体层的光电转换构件的结构中指定在一对第一和第二电极之间具有异常物理特性的点，并且隔离 通过机械划线具有异常物理特性的现场。

公开(公告)号：US08674210B2

公开(公告)日：2014-03-18

申请号：US13133138

申请日：2010-09-29

申请人： Daisuke Nishimura ,  Toshifumi Sugawara ,  Ken Nishiura ,  Norihiko Matsushima ,  Yosuke Inomata ,  Hisao Arimune ,  Tsuyoshi Uesugi

发明人： Daisuke Nishimura ,  Toshifumi Sugawara ,  Ken Nishiura ,  Norihiko Matsushima ,  Yosuke Inomata ,  Hisao Arimune ,  Tsuyoshi Uesugi

IPC分类号： H01L31/042 ,  H02N6/00 ,  H01L31/00 ,  H01L21/00

CPC分类号： H01L31/022425 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： To provide a photoelectric conversion device having a high photoelectric conversion efficiency, a photoelectric conversion device 21 includes a substrate 1, a plurality of lower electrodes 2 on the substrate 1 comprising a metal element, a plurality of photoelectric conversion layers 33 comprising a chalcogen compound semiconductor formed on the plurality of lower electrodes 2 and separated from one another on the lower electrodes 2, a metal-chalcogen compound layer 8 comprising the metal element and a chalcogen element included in the chalcogen compound semiconductor formed between the lower electrode 2 and the photoelectric conversion layer 33, an upper electrode 5 formed on the photoelectric conversion layer 33, and a connection conductor 7 electrically connecting, in a plurality of the photoelectric conversion layers 33, the upper electrode 5 to the lower electrode 2 without interposition of the metal-chalcogen compound layer 8.

摘要翻译： 为了提供具有高光电转换效率的光电转换装置，光电转换装置21包括基板1，包括金属元件的基板1上的多个下电极2，包括硫属化合物半导体的多个光电转换层33 形成在多个下电极2上并在下电极2上彼此分离，包括金属元素化合物层8和包含在下电极2和光电转换器之间的硫属化合物半导体中的硫属元素 层33，形成在光电转换层33上的上电极5和连接导体7，在多个光电转换层33中电连接上电极5与下电极2而不插入金属 - 硫属化合物 第8层。

公开(公告)号：US20120174957A1

公开(公告)日：2012-07-12

申请号：US13133138

申请日：2010-09-29

申请人： Daisuke Nishimura ,  Toshifumi Sugawara ,  Ken Nishiura ,  Norihiko Matsushima ,  Yosuke Inomata ,  Hisao Arimune ,  Tsuyoshi Uesugi

发明人： Daisuke Nishimura ,  Toshifumi Sugawara ,  Ken Nishiura ,  Norihiko Matsushima ,  Yosuke Inomata ,  Hisao Arimune ,  Tsuyoshi Uesugi

IPC分类号： H01L31/042 ,  H01L31/0264

CPC分类号： H01L31/022425 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： To provide a photoelectric conversion device having a high photoelectric conversion efficiency, a photoelectric conversion device 21 includes a substrate 1, a plurality of lower electrodes 2 on the substrate 1 comprising a metal element, a plurality of photoelectric conversion layers 33 comprising a chalcogen compound semiconductor formed on the plurality of lower electrodes 2 and separated from one another on the lower electrodes 2, a metal-chalcogen compound layer 8 comprising the metal element and a chalcogen element included in the chalcogen compound semiconductor formed between the lower electrode 2 and the photoelectric conversion layer 33, an upper electrode 5 formed on the photoelectric conversion layer 33, and a connection conductor 7 electrically connecting, in a plurality of the photoelectric conversion layers 33, the upper electrode 5 to the lower electrode 2 without interposition of the metal-chalcogen compound layer 8.

摘要翻译： 为了提供具有高光电转换效率的光电转换装置，光电转换装置21包括基板1，包括金属元件的基板1上的多个下电极2，包括硫属化合物半导体的多个光电转换层33 形成在多个下电极2上并在下电极2上彼此分离，包括金属元素化合物层8和包含在下电极2和光电转换器之间的硫属化合物半导体中的硫属元素 层33，形成在光电转换层33上的上电极5和连接导体7，在多个光电转换层33中电连接上电极5与下电极2而不插入金属 - 硫属化合物 第8层。

公开(公告)号：US20130247964A1

公开(公告)日：2013-09-26

申请号：US13990720

申请日：2011-11-29

申请人： Yosuke Inomata ,  Masahiro Yokota ,  Shintaro Mitsuno ,  Norihiko Matsushima ,  Hisao Arimune

发明人： Yosuke Inomata ,  Masahiro Yokota ,  Shintaro Mitsuno ,  Norihiko Matsushima ,  Hisao Arimune

IPC分类号： H01L31/048

CPC分类号： H01L31/0463 ,  H01L31/0201 ,  H01L31/02013 ,  H01L31/046 ,  H01L31/048 ,  H02S40/34 ,  Y02E10/50

摘要： A photoelectric conversion module is disclosed. The photoelectric conversion module includes a photoelectric conversion panel and a moisture barrier plate. The photoelectric conversion panel includes first and second surfaces, a photoelectric converter between the first and second surfaces, and a conductive lead. An opening is located on the first surface. The moisture barrier plate is located on the second surface and includes first and second principal surfaces, and a through-hole extending from the first principal surface to the second principal surface. The moisture barrier plate covers the one principal surface. The through-hole does not overlap the opening. A filling member is located in a gap between the first surface and the first principal surface. The conductive lead goes through a part of the filling member, and has an end electrically coupled to the photoelectric converter and the other end coming out through the opening to the exterior.

摘要翻译： 公开了一种光电转换模块。 光电转换模块包括光电转换面板和防潮板。 光电转换面板包括第一表面和第二表面，第一表面和第二表面之间的光电转换器和导电引线。 一个开口位于第一个表面上。 防潮板位于第二表面上并且包括第一和第二主表面以及从第一主表面延伸到第二主表面的通孔。 防潮板覆盖一个主表面。 通孔不与开口重叠。 填充构件位于第一表面和第一主表面之间的间隙中。 导电引线穿过填充构件的一部分，并且具有电耦合到光电转换器的端部，另一端通过开口到达外部。

公开(公告)号：US09287434B2

公开(公告)日：2016-03-15

申请号：US14129684

申请日：2012-06-18

申请人： Akio Yamamoto ,  Seiji Oguri ,  Hiromitsu Ogawa ,  Aki Kitabayashi ,  Shinichi Abe ,  Kazumasa Umesato ,  Norihiko Matsushima ,  Keizo Takeda ,  Manabu Kyuzo ,  Ken Nishiura ,  Atsuo Hatate

发明人： Akio Yamamoto ,  Seiji Oguri ,  Hiromitsu Ogawa ,  Aki Kitabayashi ,  Shinichi Abe ,  Kazumasa Umesato ,  Norihiko Matsushima ,  Keizo Takeda ,  Manabu Kyuzo ,  Ken Nishiura ,  Atsuo Hatate

IPC分类号： H01L31/18 ,  H01L21/02 ,  H01L31/032

CPC分类号： H01L31/18 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02469 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/0324 ,  Y02E10/541 ,  Y02P70/521

摘要： Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.

摘要翻译： 公开了半导体层的制造方法和光电转换装置的制造方法。 制造半导体层的方法的一个实施例包括：形成含有金属元素和氧元素的膜; 通过加热膜产生氧气; 以及通过使所述金属元素与硫属元素反应从所述膜形成含有金属硫族化物的半导体层。 该方法的另一实施例包括形成含有金属元素的下膜; 在下膜上形成含有金属元素和含有氧的物质的上膜; 通过加热物质产生氧气; 以及通过使硫属元素与下膜和上膜中的金属元素反应，从下膜和上膜形成含有金属硫族化物的半导体层。

公开(公告)号：US20140127851A1

公开(公告)日：2014-05-08

申请号：US14129684

申请日：2012-06-18

申请人： Akio Yamamoto ,  Seiji Oguri ,  Hiromitsu Ogawa ,  Aki Kitabayashi ,  Shinichi Abe ,  Kazumasa Umesato ,  Norihiko Matsushima ,  Keizo Takeda ,  Manabu Kyuzo ,  Ken Nishiura ,  Atsuo Hatate

发明人： Akio Yamamoto ,  Seiji Oguri ,  Hiromitsu Ogawa ,  Aki Kitabayashi ,  Shinichi Abe ,  Kazumasa Umesato ,  Norihiko Matsushima ,  Keizo Takeda ,  Manabu Kyuzo ,  Ken Nishiura ,  Atsuo Hatate

IPC分类号： H01L31/18 ,  H01L31/032 ,  H01L21/02

CPC分类号： H01L31/18 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02469 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/0324 ,  Y02E10/541 ,  Y02P70/521

摘要： Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.

摘要翻译： 公开了半导体层的制造方法和光电转换装置的制造方法。 制造半导体层的方法的一个实施例包括：形成含有金属元素和氧元素的膜; 通过加热膜产生氧气; 以及通过使所述金属元素与硫属元素反应从所述膜形成含有金属硫族化物的半导体层。 该方法的另一实施例包括形成含有金属元素的下膜; 在下膜上形成含有金属元素和含有氧的物质的上膜; 通过加热物质产生氧气; 以及通过使硫属元素与下膜和上膜中的金属元素反应，从下膜和上膜形成含有金属硫族化物的半导体层。

公开(公告)号：US20130125982A1

公开(公告)日：2013-05-23

申请号：US13813011

申请日：2011-07-27

申请人： Seiji Oguri ,  Isamu Tanaka ,  Norihiko Matsushima ,  Akio Yamamoto

发明人： Seiji Oguri ,  Isamu Tanaka ,  Norihiko Matsushima ,  Akio Yamamoto

IPC分类号： H01L31/032

CPC分类号： H01L31/0322 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0749 ,  Y02E10/541

摘要： It is aimed to provide a photoelectric conversion device having high adhesion between a light-absorbing layer and an electrode layer as well as high photoelectric conversion efficiency. A photoelectric conversion device comprises a light-absorbing layer including a chalcopyrite-based compound semiconductor and oxygen. The light-absorbing layer includes voids therein. An atomic concentration of oxygen in the vicinity of the voids is higher than an average atomic concentration of oxygen in the light-absorbing layer.

摘要翻译： 旨在提供一种在光吸收层和电极层之间具有高粘附性的光电转换装置以及高的光电转换效率。 光电转换装置包括包含基于黄铜矿的化合物半导体和氧的光吸收层。 光吸收层包括其中的空隙。 空隙附近的氧原子浓度高于光吸收层中氧的平均原子浓度。

公开(公告)号：US08178778B2

公开(公告)日：2012-05-15

申请号：US11909593

申请日：2006-03-24

申请人： Koichiro Niira ,  Tomonari Sakamoto ,  Norihiko Matsushima

发明人： Koichiro Niira ,  Tomonari Sakamoto ,  Norihiko Matsushima

IPC分类号： H01L31/00

CPC分类号： H01L31/068 ,  H01L31/022425 ,  Y02E10/547

摘要： A photovoltaic conversion element includes a one conductivity-type crystalline Si semiconductor; an opposite conductivity-type semiconductor which is joined to the crystalline Si semiconductor to form a pn junction therebetween; an electrode provided on the opposite conductivity-type semiconductor; and a depletion region formed from the side of the one conductivity-type crystalline Si semiconductor to the side of the opposite conductivity-type semiconductor across the pn junction formed therebetween. The depletion region has a first depletion region located inside the crystalline Si semiconductor and under the electrode, and the first depletion region has an oxygen concentration of 1E18 [atoms/cm3] or less.

摘要翻译： 光电转换元件包括一个导电型晶体Si半导体; 连接到晶体Si半导体以在其间形成pn结的相反的导电型半导体; 设置在相对导电型半导体上的电极; 以及由一个导电型晶体Si半导体的一侧形成在跨越pn结的相反导电型半导体侧的耗尽区。 耗尽区具有位于晶体Si半导体内部和电极下的第一耗尽区，第一耗尽区的氧浓度为1E18 [原子/ cm3]以下。

公开(公告)号：US20090211635A1

公开(公告)日：2009-08-27

申请号：US11909593

申请日：2006-03-24

申请人： Koichiro Niira ,  Tomonari Sakamoto ,  Norihiko Matsushima

发明人： Koichiro Niira ,  Tomonari Sakamoto ,  Norihiko Matsushima

IPC分类号： H01L31/0368 ,  H01L21/20

CPC分类号： H01L31/068 ,  H01L31/022425 ,  Y02E10/547

摘要： A photovoltaic conversion element includes a one conductivity-type crystalline Si semiconductor; an opposite conductivity-type semiconductor which is joined to the crystalline Si semiconductor to form a pn junction therebetween; an electrode provided on the opposite conductivity-type semiconductor; and a depletion region formed from the side of the one conductivity-type crystalline Si semiconductor to the side of the opposite conductivity-type semiconductor across the pn junction formed therebetween. The depletion region has a first depletion region located inside the crystalline Si semiconductor and under the electrode, and the first depletion region has an oxygen concentration of 1E18 [atoms/cm3] or less.

摘要翻译： 光电转换元件包括一个导电型晶体Si半导体; 连接到晶体Si半导体以在其间形成pn结的相反的导电型半导体; 设置在相对导电型半导体上的电极; 以及由一个导电型晶体Si半导体的一侧形成在跨越pn结的相反导电型半导体侧的耗尽区。 耗尽区具有位于晶体Si半导体内部和电极下的第一耗尽区，第一耗尽区的氧浓度为1E18 [原子/ cm3]以下。