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54 条记录 (耗时 0.033 秒)

    Nanowire light emitting device
    12.
    发明申请
    Nanowire light emitting device 审中-公开
    纳米线发光装置

    公开(公告)号：US20050224780A1

    公开(公告)日：2005-10-13

    申请号：US11100455

    申请日：2005-04-07

    申请人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

    发明人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

    IPC分类号： H01L29/06 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18

    CPC分类号： H01L33/08 ,  B82Y10/00 ,  H01L33/06 ,  H01L33/18 ,  Y10S977/762

    摘要： A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.

    摘要翻译： 提供了一种纳米线发光器件。 纳米线发光器件包括衬底，形成在衬底上的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线包括p掺杂部分和n掺杂部分， p掺杂部分和n掺杂部分，形成在纳米线上的第二导电层和其中嵌入发光材料的绝缘聚合物，填充纳米线之间的空间。 从发光层发出的光的颜色根据发光材料而变化。

    Nanowire light emitting device
    13.
    发明授权
    Nanowire light emitting device 有权
    纳米线发光装置

    公开(公告)号：US07919786B2

    公开(公告)日：2011-04-05

    申请号：US12040686

    申请日：2008-02-29

    申请人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

    发明人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

    IPC分类号： H01L33/00

    CPC分类号： H01L33/08 ,  B82Y10/00 ,  H01L33/06 ,  H01L33/18 ,  Y10S977/762

    摘要： A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.

    摘要翻译： 提供了一种纳米线发光器件。 纳米线发光器件包括衬底，在衬底上形成的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线包括p掺杂部分和n掺杂部分， p掺杂部分和n掺杂部分，形成在纳米线上的第二导电层和其中嵌入发光材料的绝缘聚合物，填充纳米线之间的空间。 从发光层发出的光的颜色根据发光材料而变化。

    Nanowire light emitting device and method of fabricating the same
    14.
    发明授权
    Nanowire light emitting device and method of fabricating the same 失效
    纳米线发光器件及其制造方法

    公开(公告)号：US07435996B2

    公开(公告)日：2008-10-14

    申请号：US11100377

    申请日：2005-04-07

    申请人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

    发明人： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

    IPC分类号： H01L33/00 ,  H01L51/50

    CPC分类号： H01L33/24 ,  B82Y20/00 ,  H01L33/08 ,  H01L33/38 ,  H01L51/0038 ,  H01L51/502 ,  H01L51/5032 ,  H01L2251/303

    摘要： A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires having an n-type doped portion and a p-type doped portion, a light emitting layer between the n-type doped portion and the p-type doped portion, first and second conductive organic polymers filling a space corresponding to the p-type doped portion and the n-type doped portion, respectively, and a second conductive layer formed on the nanowires. The organic polymers dope the corresponding surface of the nanowires by receiving electrons from the corresponding surface of the nanowires or by providing electrons to the surface of the nanowires.

    摘要翻译： 提供一种纳米线发光器件及其制造方法。 纳米线发光器件包括形成在衬底上的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线具有n型掺杂部分和p型掺杂部分，发光层 在n型掺杂部分和p型掺杂部分之间，分别填充与p型掺杂部分和n型掺杂部分相对应的空间的第一和第二导电有机聚合物和形成在p型掺杂部分上的第二导电层 纳米线 有机聚合物通过从纳米线的相应表面接收电子或通过向纳米线的表面提供电子来掺杂纳米线的相应表面。

    Nanowire light emitting device and method of fabricating the same
    15.
    发明申请
    Nanowire light emitting device and method of fabricating the same 审中-公开
    纳米线发光器件及其制造方法

    公开(公告)号：US20070235738A1

    公开(公告)日：2007-10-11

    申请号：US11224286

    申请日：2005-09-13

    申请人： Young-gu Jin ,  Hyo-sug Lee ,  Sung-hoon Lee

    发明人： Young-gu Jin ,  Hyo-sug Lee ,  Sung-hoon Lee

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/18 ,  H01L33/08 ,  H01L33/20

    摘要： A nanowire light emitting device and method of fabricating the same. The nanowire light emitting device includes: a substrate; a first electrode layer formed on the substrate; a plurality of nanowires vertically formed on the first electrode layer, the nanowire having a p-type doped portion and an n-type doped portion formed separately from each other on both sides thereof; a light emitting layer formed between the p-type doped portion and the n-type doped portion; and a second electrode layer formed on the nanowires, wherein the p-type doped portion is formed by chemically binding a radical having an only half-occupied outermost orbital shell to a corresponding surface of the respective nanowires so as to donate an electron to the radical.

    摘要翻译： 纳米线发光器件及其制造方法。 纳米线发光器件包括：衬底; 形成在所述基板上的第一电极层; 在所述第一电极层上垂直形成的多个纳米线，所述纳米线的两侧分别形成有p型掺杂部和n型掺杂部， 在p型掺杂部分和n型掺杂部分之间形成的发光层; 以及形成在所述纳米线上的第二电极层，其中所述p型掺杂部分通过将仅具有半占据的最外轨道壳的基团化学结合到相应纳米线的相应表面而形成，以便向所述基团 。

    P-type semiconductor carbon nanotube using halogen element and fullerene or alkali element
    16.
    发明授权
    P-type semiconductor carbon nanotube using halogen element and fullerene or alkali element 有权
    使用卤素元素和富勒烯或碱元素的P型半导体碳纳米管

    公开(公告)号：US07501650B2

    公开(公告)日：2009-03-10

    申请号：US11202185

    申请日：2005-08-12

    申请人： Noe-jung Park ,  Sung-hoon Lee

    发明人： Noe-jung Park ,  Sung-hoon Lee

    IPC分类号： H01L29/10

    CPC分类号： B82Y30/00 ,  C01B32/174 ,  D01F11/121 ,  Y10S977/734 ,  Y10S977/742

    摘要： A p-type semiconductor carbon nanotube and a method of manufacturing the same are provided. The p-type semiconductor carbon nanotube includes a carbon nanotube; and a halogen element that is attached to an inner wall of the carbon nanotube and accepts electrons from the carbon nanotube to achieve p-type doping of the carbon nanotube. The p-type semiconductor carbon nanotube is stable at high temperatures and can maintain intrinsic good electrical conductivity of the carbon nanotube. The p-type semiconductor carbon nanotube can be relatively easily obtained using a conventional method of manufacturing a carbon nanotube, thereby significantly broadening the range of application of the carbon nanotube to electronic devices.

    摘要翻译： 提供了p型半导体碳纳米管及其制造方法。 p型半导体碳纳米管包括碳纳米管; 以及附着在碳纳米管的内壁上并从碳纳米管接收电子以实现碳纳米管的p型掺杂的卤素元素。 p型半导体碳纳米管在高温下是稳定的并且可以保持碳纳米管的本征良好的导电性。 可以使用常规的碳纳米管制造方法相对容易地获得p型半导体碳纳米管，从而显着拓宽碳纳米管应用于电子器件的范围。

    P-type semiconductor carbon nanotube and method of manufacturing the same
    17.
    发明申请
    P-type semiconductor carbon nanotube and method of manufacturing the same 有权
    P型半导体碳纳米管及其制造方法

    公开(公告)号：US20060067870A1

    公开(公告)日：2006-03-30

    申请号：US11202185

    申请日：2005-08-12

    申请人： Noe-jung Park ,  Sung-hoon Lee

    发明人： Noe-jung Park ,  Sung-hoon Lee

    IPC分类号： D01F9/12

    CPC分类号： B82Y30/00 ,  C01B32/174 ,  D01F11/121 ,  Y10S977/734 ,  Y10S977/742

    摘要： A p-type semiconductor carbon nanotube and a method of manufacturing the same are provided. The p-type semiconductor carbon nanotube includes a carbon nanotube; and a halogen element that is attached to an inner wall of the carbon nanotube and accepts electrons from the carbon nanotube to achieve p-type doping of the carbon nanotube. The p-type semiconductor carbon nanotube is stable at high temperatures and can maintain intrinsic good electrical conductivity of the carbon nanotube. The p-type semiconductor carbon nanotube can be relatively easily obtained using a conventional method of manufacturing a carbon nanotube, thereby significantly broadening the range of application of the carbon nanotube to electronic devices.

    摘要翻译： 提供了p型半导体碳纳米管及其制造方法。 p型半导体碳纳米管包括碳纳米管; 以及附着在碳纳米管的内壁上并从碳纳米管接收电子以实现碳纳米管的p型掺杂的卤素元素。 p型半导体碳纳米管在高温下是稳定的并且可以保持碳纳米管的本征良好的导电性。 可以使用常规的碳纳米管制造方法相对容易地获得p型半导体碳纳米管，从而显着拓宽碳纳米管应用于电子器件的范围。