公开(公告)号：US08299553B2

公开(公告)日：2012-10-30

申请号：US12946051

申请日：2010-11-15

申请人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： H01L27/14 ,  H01L31/00

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US06890839B2

公开(公告)日：2005-05-10

申请号：US10257460

申请日：2002-01-15

申请人： Norihito Kawaguchi ,  Kenichiro Nishida ,  Mikito Ishii ,  Takehito Yagi ,  Miyuki Masaki ,  Atsushi Yoshinouchi ,  Koichiro Tanaka

发明人： Norihito Kawaguchi ,  Kenichiro Nishida ,  Mikito Ishii ,  Takehito Yagi ,  Miyuki Masaki ,  Atsushi Yoshinouchi ,  Koichiro Tanaka

IPC分类号： A61B18/20 ,  B23K26/06 ,  B23K26/073 ,  H01L21/268 ,  H01S3/00 ,  H01L21/00 ,  H01L21/20 ,  H01L21/26 ,  H01L21/331

CPC分类号： H01S3/005 ,  B23K26/0732

摘要： An object of the present invention is to provide a laser annealing method and apparatus capable of performing uniform beam emission. By means of the present invention, uniform beam application to a sample can be achieved because a linear cross-sectional configuration can be created in an optical system with a beam having a Gaussian distribution while areas of strong light intensity are avoided by rotating the beam from a laser light source at a prescribed angle by means of rotating means even when the beam pattern of the beam from the laser light source has a non-uniform intensity distribution.

摘要翻译： 本发明的一个目的是提供能够执行均匀的束发射的激光退火方法和装置。 通过本发明，可以实现对样品的均匀波束施加，因为可以在具有高斯分布的光束的光学系统中产生线性横截面配置，而通过将光束从 即使当来自激光光源的光束的光束图案具有不均匀的强度分布时，通过旋转装置以规定角度的激光光源。

公开(公告)号：US06621636B2

公开(公告)日：2003-09-16

申请号：US10026340

申请日：2001-12-21

申请人： Koichiro Tanaka ,  Setsuo Nakajima ,  Takehito Yagi ,  Mikito Ishii ,  Kenichiro Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Koichiro Tanaka ,  Setsuo Nakajima ,  Takehito Yagi ,  Mikito Ishii ,  Kenichiro Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： G02B2710

CPC分类号： G02B27/108 ,  G02B27/145

摘要： A laser irradiation apparatus having a low running cost compared to the conventional, and a laser irradiation method using the laser irradiation apparatus, are provided. Crystal grains having a size in the same order as, or greater than, conventional grains are formed. The cooling speed of a semiconductor film is made slower, and it becomes possible to form crystal grains having a grain size in the same order as, or greater than, the size of grains formed in the case of irradiating laser light having a long output time to the semiconductor film. This is achieved by delaying one laser light with respect to another laser light, combining the laser lights, and performing irradiation to the semiconductor film in the case of irradiating laser light using a solid state laser as a light source, which has a short output time.

公开(公告)号：US07833871B2

公开(公告)日：2010-11-16

申请号：US11916687

申请日：2006-09-12

申请人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US20100221898A1

公开(公告)日：2010-09-02

申请号：US12159259

申请日：2006-11-07

申请人： Kenichiro Nishida ,  Ryusuke Kawakami ,  Norihito Kawaguchi ,  Miyuki Masaki

发明人： Kenichiro Nishida ,  Ryusuke Kawakami ,  Norihito Kawaguchi ,  Miyuki Masaki

IPC分类号： H01L21/268 ,  B23K26/06

CPC分类号： B23K26/0738 ,  B23K26/0608 ,  B23K26/067 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285

摘要： The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cylindrical lens array 26 or a light guide 36 and concentrating optical systems 28 and 44 or by the use of an optical system including a diffracting optical element. Accordingly, since the effective energy range of a laser beam applied to the amorphous semiconductor film is widened and the transport speed of a substrate 3 can be enhanced as much, it is possible to improve the processing ability of the laser annealing.

摘要翻译： 施加到非晶半导体膜（非晶硅膜）的矩形激光束的短边方向上的能量分布均匀。 可以通过使用柱面透镜阵列26或光导36以及集中光学系统28和44或通过使用包括衍射的光学系统在矩形激光束的短边方向上的能量分布 光学元件。 因此，由于施加到非晶半导体膜的激光束的有效能量范围变宽，能够提高基板3的输送速度，所以能够提高激光退火的处理能力。

公开(公告)号：US08569814B2

公开(公告)日：2013-10-29

申请号：US13222427

申请日：2011-08-31

申请人： Kenichiro Nishida ,  Ryusuke Kawakami ,  Norihito Kawaguchi ,  Miyuki Masaki

发明人： Kenichiro Nishida ,  Ryusuke Kawakami ,  Norihito Kawaguchi ,  Miyuki Masaki

IPC分类号： H01L31/113

CPC分类号： B23K26/0738 ,  B23K26/0608 ,  B23K26/067 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285

摘要： The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cylindrical lens array or a light guide and concentrating optical systems or by the use of an optical system including a diffracting optical element. Accordingly, since the effective energy range of a laser beam applied to the amorphous semiconductor film is widened and the transport speed of a substrate can be enhanced as much, it is possible to improve the processing ability of the laser annealing.

摘要翻译： 施加到非晶半导体膜（非晶硅膜）的矩形激光束的短边方向上的能量分布均匀。 可以通过使用柱面透镜阵列或光导和集中光学系统或通过使用包括衍射光学元件的光学系统在矩形激光束的短边方向上的能量分布。 因此，由于施加到非晶半导体膜的激光束的有效能量范围变宽，能够提高基板的输送速度，所以能够提高激光退火的处理能力。

公开(公告)号：US08012841B2

公开(公告)日：2011-09-06

申请号：US12159259

申请日：2006-11-07

申请人： Kenichiro Nishida ,  Ryusuke Kawakami ,  Norihito Kawaguchi ,  Miyuki Masaki

发明人： Kenichiro Nishida ,  Ryusuke Kawakami ,  Norihito Kawaguchi ,  Miyuki Masaki

IPC分类号： H01L21/336

CPC分类号： B23K26/0738 ,  B23K26/0608 ,  B23K26/067 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285

摘要： The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cylindrical lens array 26 or a light guide 36 and concentrating optical systems 28 and 44 or by the use of an optical system including a diffracting optical element. Accordingly, since the effective energy range of a laser beam applied to the amorphous semiconductor film is widened and the transport speed of a substrate 3 can be enhanced as much, it is possible to improve the processing ability of the laser annealing.

摘要翻译： 施加到非晶半导体膜（非晶硅膜）的矩形激光束的短边方向上的能量分布均匀。 可以通过使用柱面透镜阵列26或光导36以及集中光学系统28和44或通过使用包括衍射的光学系统在矩形激光束的短边方向上的能量分布 光学元件。 因此，由于施加到非晶半导体膜的激光束的有效能量范围变宽，能够提高基板3的输送速度，所以能够提高激光退火的处理能力。

公开(公告)号：US08339613B2

公开(公告)日：2012-12-25

申请号：US13428297

申请日：2012-03-23

申请人： Ryusuke Kawakami ,  Miyuki Masaki

发明人： Ryusuke Kawakami ,  Miyuki Masaki

IPC分类号： G01B11/14

CPC分类号： B23K26/03 ,  B23K26/083 ,  G01J1/4257 ,  H01L21/268 ,  H01L31/20

摘要： A method for making a sample for evaluation of laser irradiation position and evaluating the sample, and an apparatus which is switchable between a first mode of modification of semiconductor and a second mode of making and evaluating the sample. Specifically, a sample is made by irradiating a semiconductor substrate for evaluation with a pulse laser beam while the semiconductor substrate is moved for evaluation at an evaluation speed higher than a modifying treatment speed, each relative positional information between pulse-irradiated regions in the sample is extracted, and stability of the each relative positional information between pulse-irradiated regions is evaluated. The evaluation speed is such a speed that separates the pulse-irradiated regions on the sample from each other in a moving direction.

公开(公告)号：US20090219548A1

公开(公告)日：2009-09-03

申请号：US12361284

申请日：2009-01-28

申请人： Ryusuke Kawakami ,  Miyuki Masaki

发明人： Ryusuke Kawakami ,  Miyuki Masaki

IPC分类号： G01B11/14 ,  G01N37/00

CPC分类号： B23K26/03 ,  B23K26/083 ,  G01J1/4257 ,  H01L21/268 ,  H01L31/20

摘要： A method for making a sample for evaluation of laser irradiation position and evaluating the sample, and an apparatus which is switchable between a first mode of modification of semiconductor and a second mode of making and evaluating the sample. Specifically, a sample is made by irradiating a semiconductor substrate for evaluation with a pulse laser beam while the semiconductor substrate is moved for evaluation at an evaluation speed higher than a modifying treatment speed, each relative positional information between pulse-irradiated regions in the sample is extracted, and stability of the each relative positional information between pulse-irradiated regions is evaluated. The evaluation speed is such a speed that separates the pulse-irradiated regions on the sample from each other in a moving direction.

摘要翻译： 一种用于制造用于评估激光照射位置和评估样品的样品的方法，以及可在第一半导体模式和第二模式制备和评估样品之间切换的装置。 具体而言，通过在半导体基板以比修正处理速度高的评价速度移动半导体基板进行评价的状态下照射用于评价的半导体基板，样本中的脉冲照射区域之间的各相对位置信息为 评价脉冲照射区域之间的每个相对位置信息的提取和稳定性。 评价速度是使样本上的脉冲照射区域沿移动方向彼此分离的速度。

公开(公告)号：US08144341B2

公开(公告)日：2012-03-27

申请号：US13279559

申请日：2011-10-24

申请人： Ryusuke Kawakami ,  Miyuki Masaki

发明人： Ryusuke Kawakami ,  Miyuki Masaki

IPC分类号： G01B11/14

CPC分类号： B23K26/03 ,  B23K26/083 ,  G01J1/4257 ,  H01L21/268 ,  H01L31/20

摘要： A method for making a sample for evaluation of laser irradiation position and evaluating the sample, and an apparatus which is switchable between a first mode of modification of semiconductor and a second mode of making and evaluating the sample. Specifically, a sample is made by irradiating a semiconductor substrate for evaluation with a pulse laser beam while the semiconductor substrate is moved for evaluation at an evaluation speed higher than a modifying treatment speed, each relative positional information between pulse-irradiated regions in the sample is extracted, and stability of the each relative positional information between pulse-irradiated regions is evaluated. The evaluation speed is such a speed that separates the pulse-irradiated regions on the sample from each other in a moving direction.

摘要翻译： 一种用于制造用于评估激光照射位置和评估样品的样品的方法，以及可在第一半导体模式和第二模式制备和评估样品之间切换的装置。 具体地说，通过在半导体衬底以比修改处理速度高的评估速度移动评估半导体衬底的同时照射用于评估的半导体衬底，样本中的脉冲照射区域之间的每个相对位置信息为 评价脉冲照射区域之间的每个相对位置信息的提取和稳定性。 评价速度是使样本上的脉冲照射区域沿移动方向彼此分离的速度。