公开(公告)号：US06890839B2

公开(公告)日：2005-05-10

申请号：US10257460

申请日：2002-01-15

申请人： Norihito Kawaguchi ,  Kenichiro Nishida ,  Mikito Ishii ,  Takehito Yagi ,  Miyuki Masaki ,  Atsushi Yoshinouchi ,  Koichiro Tanaka

发明人： Norihito Kawaguchi ,  Kenichiro Nishida ,  Mikito Ishii ,  Takehito Yagi ,  Miyuki Masaki ,  Atsushi Yoshinouchi ,  Koichiro Tanaka

IPC分类号： A61B18/20 ,  B23K26/06 ,  B23K26/073 ,  H01L21/268 ,  H01S3/00 ,  H01L21/00 ,  H01L21/20 ,  H01L21/26 ,  H01L21/331

CPC分类号： H01S3/005 ,  B23K26/0732

摘要： An object of the present invention is to provide a laser annealing method and apparatus capable of performing uniform beam emission. By means of the present invention, uniform beam application to a sample can be achieved because a linear cross-sectional configuration can be created in an optical system with a beam having a Gaussian distribution while areas of strong light intensity are avoided by rotating the beam from a laser light source at a prescribed angle by means of rotating means even when the beam pattern of the beam from the laser light source has a non-uniform intensity distribution.

摘要翻译： 本发明的一个目的是提供能够执行均匀的束发射的激光退火方法和装置。 通过本发明，可以实现对样品的均匀波束施加，因为可以在具有高斯分布的光束的光学系统中产生线性横截面配置，而通过将光束从 即使当来自激光光源的光束的光束图案具有不均匀的强度分布时，通过旋转装置以规定角度的激光光源。

公开(公告)号：US06621636B2

公开(公告)日：2003-09-16

申请号：US10026340

申请日：2001-12-21

申请人： Koichiro Tanaka ,  Setsuo Nakajima ,  Takehito Yagi ,  Mikito Ishii ,  Kenichiro Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Koichiro Tanaka ,  Setsuo Nakajima ,  Takehito Yagi ,  Mikito Ishii ,  Kenichiro Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： G02B2710

CPC分类号： G02B27/108 ,  G02B27/145

摘要： A laser irradiation apparatus having a low running cost compared to the conventional, and a laser irradiation method using the laser irradiation apparatus, are provided. Crystal grains having a size in the same order as, or greater than, conventional grains are formed. The cooling speed of a semiconductor film is made slower, and it becomes possible to form crystal grains having a grain size in the same order as, or greater than, the size of grains formed in the case of irradiating laser light having a long output time to the semiconductor film. This is achieved by delaying one laser light with respect to another laser light, combining the laser lights, and performing irradiation to the semiconductor film in the case of irradiating laser light using a solid state laser as a light source, which has a short output time.

公开(公告)号：US08115137B2

公开(公告)日：2012-02-14

申请号：US12997543

申请日：2008-06-12

申请人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita ,  Atsushi Yoshinouchi

发明人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita ,  Atsushi Yoshinouchi

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： B23K26/0732 ,  B23K26/046 ,  B23K26/0665 ,  G02B27/0905 ,  G02B27/0966 ,  G02B27/48 ,  H01L21/02678

摘要： In laser annealing using a solid state laser, a focus position of a minor axial direction of a rectangular beam is easily corrected depending on positional variation of a laser irradiated portion of a semiconductor film. By using a minor-axis condenser lens 29 condensing incident light in a minor axial direction and a projection lens 30 projecting light, which comes from the minor-axis condenser lens 29, onto a surface of a semiconductor film 3, laser beam 1 is condensed on the surface of the semiconductor film 3 in the minor axial direction of a rectangular beam. The positional variation of a vertical direction of the semiconductor film 3 in a laser irradiated portion of the semiconductor film 3 is detected by a positional variation detector 31, and the minor-axis condenser lens 29 is moved in an optical axis direction based on a value of the detection.

摘要翻译： 在使用固态激光的激光退火中，根据半导体膜的激光照射部的位置变化容易校正矩形光束的小轴方向的聚焦位置。 通过使用将小轴聚光的次轴聚光透镜29和将来自短轴聚光透镜29的光投射到半导体膜3的表面上的投影透镜30，激光束1被冷凝 在半导体膜3的矩形梁的小轴向的表面上。 半导体膜3的激光照射部分中的半导体膜3的垂直方向的位置变化由位置变化检测器31检测，并且短轴聚光透镜29基于光轴方向在光轴方向上移动 的检测。

公开(公告)号：US08629522B2

公开(公告)日：2014-01-14

申请号：US13608818

申请日：2012-09-10

申请人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： H01L27/14 ,  H01L31/00

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US20100022102A1

公开(公告)日：2010-01-28

申请号：US11916687

申请日：2006-09-12

申请人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： H01L21/268 ,  H01L21/64

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US08299553B2

公开(公告)日：2012-10-30

申请号：US12946051

申请日：2010-11-15

申请人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： H01L27/14 ,  H01L31/00

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US07833871B2

公开(公告)日：2010-11-16

申请号：US11916687

申请日：2006-09-12

申请人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US08598050B2

公开(公告)日：2013-12-03

申请号：US13001311

申请日：2009-06-19

申请人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita

发明人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita

IPC分类号： H01L21/00

CPC分类号： H01L21/02678 ,  B23K26/066 ,  B23K26/0738 ,  C30B1/023 ,  C30B29/06

摘要： Disclosed are a laser annealing method and apparatus capable of forming a crystalline semiconductor thin film on the entire surface of a substrate without sacrificing the uniformity of crystallinity in a seam portion in a long-axis direction of laser light, the crystalline semiconductor thin film having good properties and high uniformity to an extent that the seam portion is not visually recognizable. During the irradiation of a linear beam, portions corresponding to the edges of the linear beam are shielded by a mask 10 which is disposed on the optical path of a laser light 2, and the mask 10 is operated so that the amount of shielding is periodically increased and decreased.

摘要翻译： 公开了一种激光退火方法和装置，其能够在不牺牲激光长轴方向的接缝部分中的结晶度的均匀性的基板的整个表面上形成结晶半导体薄膜，该结晶半导体薄膜具有良好的 性能和高均匀性，使得接缝部分不能在视觉上识别。 在直线光束的照射期间，对应于直线光束的边缘的部分被设置在激光2的光路上的掩模10屏蔽，并且掩模10被操作以使屏蔽量周期性地 增加和减少。

公开(公告)号：US08446924B2

公开(公告)日：2013-05-21

申请号：US13418653

申请日：2012-03-13

申请人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita

发明人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita

IPC分类号： H01S3/10

CPC分类号： B23K26/0608 ,  B23K26/0676 ,  B23K26/0738 ,  B23K26/082 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/268

摘要： In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beam 1 entering a large-sized lens (long-axis condenser lens 22) of a long-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while long-axis lens arrays 20a and 20b are reciprocated in a direction corresponding to a long axial direction of a linear beam (X-direction). Therefore, vertical stripes are significantly reduced. Further, the incident angle and intensity of a laser beam 1 entering a large-sized lens (projection lens 30) of a short-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while short-axis lens arrays 26a and 26b are reciprocated in a direction corresponding to a short axial direction of a linear beam (Y-direction). Therefore, horizontal stripes are significantly reduced.

摘要翻译： 在透镜阵列式均化器光学系统的情况下，入射到入射角度和强度的激光束1进入长轴聚光光学系统的大尺寸透镜（长轴聚光透镜22） 通过在长轴透镜阵列20a和20b沿与线性光束（X方向）的长轴方向对应的方向往复运动的同时通过执行激光照射而改变每一次的后侧。 因此，垂直条纹显着减少。 此外，通过进行激光照射来改变进入设置在后侧的短轴聚光光学系统的大尺寸透镜（投影透镜30）的激光束1的入射角度和强度， 短轴透镜阵列26a和26b在与线性光束（Y方向）的短轴方向对应的方向上往复运动。 因此，水平条纹显着减少。

公开(公告)号：US20110097907A1

公开(公告)日：2011-04-28

申请号：US13001311

申请日：2009-06-19

申请人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita

发明人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita

IPC分类号： H01L21/268 ,  B23K26/06

CPC分类号： H01L21/02678 ,  B23K26/066 ,  B23K26/0738 ,  C30B1/023 ,  C30B29/06

摘要： Disclosed are a laser annealing method and apparatus capable of forming a crystalline semiconductor thin film on the entire surface of a substrate without sacrificing the uniformity of crystallinity in a seam portion in a long-axis direction of laser light, the crystalline semiconductor thin film having good properties and high uniformity to an extent that the seam portion is not visually recognizable.During the irradiation of a linear beam, portions corresponding to the edges of the linear beam are shielded by a mask 10 which is disposed on the optical path of a laser light 2, and the mask 10 is operated so that the amount of shielding is periodically increased and decreased.

摘要翻译： 公开了一种激光退火方法和装置，其能够在不牺牲激光长轴方向的接缝部分中的结晶度的均匀性的基板的整个表面上形成结晶半导体薄膜，该结晶半导体薄膜具有良好的 性能和高均匀性，使得接缝部分不能在视觉上识别。 在直线光束的照射期间，对应于直线光束的边缘的部分被设置在激光2的光路上的掩模10屏蔽，并且掩模10被操作以使屏蔽量周期性地 增加和减少。