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    Laser-irradiation method and laser-irradiation device
    2.
    发明授权
    Laser-irradiation method and laser-irradiation device 失效
    激光照射方法和激光照射装置

    公开(公告)号：US06835675B2

    公开(公告)日：2004-12-28

    申请号：US10316605

    申请日：2002-12-10

    申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Naoto Kusumoto ,  Takeshi Fukunaga ,  Setsuo Nakajima ,  Tadayoshi Miyamoto ,  Atsushi Yoshinouchi

    发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Naoto Kusumoto ,  Takeshi Fukunaga ,  Setsuo Nakajima ,  Tadayoshi Miyamoto ,  Atsushi Yoshinouchi

    IPC分类号： H01L2126

    CPC分类号： G10L17/22 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H04M3/2281 ,  H04M3/229 ,  H04M3/382 ,  H04M3/385 ,  H04M2201/40 ,  H04Q3/0016

    摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.

    摘要翻译： 一种激光照射方法，包括制造半导体器件的工艺，包括：在具有绝缘表面的衬底上形成薄膜非晶半导体的第一步骤; 通过照射脉冲型线性光和/或通过施加热处理将薄膜非晶半导体改性成晶体薄膜半导体的第二步骤; 将赋予一种导电类型的杂质元素注入晶体薄膜半导体的第三步骤; 以及通过照射脉冲型线性光和/或通过施加热处理来激活杂质元素的第四步骤; 其中上述第二和第四步骤中的峰值，半高峰值宽度和激光能量的阈值宽度各自分布在标准值的约±3％的范围内。 还要求保护的是实现上述方法的激光照射装置。

    Laser-irradiation method and laser-irradiation device
    4.
    发明授权
    Laser-irradiation method and laser-irradiation device 失效
    激光照射方法和激光照射装置

    公开(公告)号：US06455359B1

    公开(公告)日：2002-09-24

    申请号：US09298517

    申请日：1999-04-22

    申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Naoto Kusumoto ,  Takeshi Fukunaga ,  Setsuo Nakajima ,  Tadayoshi Miyamoto ,  Atsushi Yoshinouchi

    发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Naoto Kusumoto ,  Takeshi Fukunaga ,  Setsuo Nakajima ,  Tadayoshi Miyamoto ,  Atsushi Yoshinouchi

    IPC分类号： H01L2100

    CPC分类号： H01L27/1285 ,  H01L27/1214 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

    摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.

    摘要翻译： 一种激光照射方法，包括制造半导体器件的工艺，包括：在具有绝缘表面的衬底上形成薄膜非晶半导体的第一步骤; 通过照射脉冲型线性光和/或通过施加热处理将薄膜非晶半导体改性成晶体薄膜半导体的第二步骤; 将赋予一种导电类型的杂质元素注入晶体薄膜半导体的第三步骤; 以及通过照射脉冲型线性光和/或通过施加热处理来激活杂质元素的第四步骤; 其中上述第二和第四步骤中的峰值，半高峰值宽度和激光能量的阈值宽度各自分布在标准值的约±3％的范围内。 还要求保护的是实现上述方法的激光照射装置。

    Method of manufacturing a semiconductor device
    5.
    发明授权
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07759181B2

    公开(公告)日：2010-07-20

    申请号：US11154846

    申请日：2005-06-16

    申请人： Koichiro Tanaka ,  Setsuo Nakajima

    发明人： Koichiro Tanaka ,  Setsuo Nakajima

    IPC分类号： H01L21/84

    CPC分类号： B23K26/067 ,  B23K26/0604 ,  B23K26/0613 ,  H01L21/32136 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

    摘要： In a laser irradiation apparatus having low running costs as compared with a conventional apparatus and a laser beam irradiation method using the same, a crystalline semiconductor film having a crystal grain of a grain size equivalent to or larger than a conventional one is formed, and a TFT is manufactured by using the crystalline semiconductor film, so that the TFT enabling a high speed operation is realized. In a case where a laser beam of a short output time from a solid laser as a light source is irradiated to a semiconductor film, another laser beam is delayed from one laser beam, and the laser beams are synthesized to be irradiated to the semiconductor film, so that a cooling speed of the semiconductor film is made gentle, and it becomes possible to form the crystalline semiconductor film having the crystal grain of the grain size equivalent to or larger than that in a case where a laser beam having a long output time is irradiated to the semiconductor film. By manufacturing a TFT using such a crystalline semiconductor film, the TFT enabling the high speed operation can be realized.

    摘要翻译： 在与传统装置相比具有低运行成本的激光照射装置和使用其的激光束照射方法中，形成具有等于或大于常规晶粒尺寸的晶粒的晶体半导体膜，并且 通过使用晶体半导体膜制造TFT，从而实现能够进行高速运转的TFT。 在将来自固体激光器作为光源的短输出时间的激光束照射到半导体膜的情况下，另一个激光束从一个激光束延迟，并且激光束被合成以照射到半导体膜 ，使得半导体膜的冷却速度变得平缓，并且可以形成具有等于或大于具有长输出时间的激光束的晶粒尺寸的晶粒的晶粒的晶体半导体膜 照射到半导体膜。 通过使用这种晶体半导体膜制造TFT，可以实现能够进行高速操作的TFT。

    Method of manufacturing a semiconductor device
    6.
    发明申请
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US20050233512A1

    公开(公告)日：2005-10-20

    申请号：US11154846

    申请日：2005-06-16

    申请人： Koichiro Tanaka ,  Setsuo Nakajima

    发明人： Koichiro Tanaka ,  Setsuo Nakajima

    IPC分类号： B23K26/06 ,  B23K26/067 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/00

    CPC分类号： B23K26/067 ,  B23K26/0604 ,  B23K26/0613 ,  H01L21/32136 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

    摘要： In a laser irradiation apparatus having low running costs as compared with a conventional apparatus and a laser beam irradiation method using the same, a crystalline semiconductor film having a crystal grain of a grain size equivalent to or larger than a conventional one is formed, and a TFT is manufactured by using the crystalline semiconductor film, so that the TFT enabling a high speed operation is realized. In a case where a laser beam of a short output time from a solid laser as a light source is irradiated to a semiconductor film, another laser beam is delayed from one laser beam, and the laser beams are synthesized to be irradiated to the semiconductor film, so that a cooling speed of the semiconductor film is made gentle, and it becomes possible to form the crystalline semiconductor film having the crystal grain of the grain size equivalent to or larger than that in a case where a laser beam having a long output time is irradiated to the semiconductor film. By manufacturing a TFT using such a crystalline semiconductor film, the TFT enabling the high speed operation can be realized.

    摘要翻译： 在与传统装置相比具有低运行成本的激光照射装置和使用其的激光束照射方法中，形成具有等于或大于常规晶粒尺寸的晶粒的晶体半导体膜，并且 通过使用晶体半导体膜制造TFT，从而实现能够进行高速运转的TFT。 在将来自固体激光器作为光源的短输出时间的激光束照射到半导体膜的情况下，另一个激光束从一个激光束延迟，并且激光束被合成以照射到半导体膜 ，使得半导体膜的冷却速度变得平缓，并且可以形成具有等于或大于具有长输出时间的激光束的晶粒尺寸的晶粒的晶粒的晶体半导体膜 照射到半导体膜。 通过使用这种晶体半导体膜制造TFT，可以实现能够进行高速操作的TFT。

    Method of manufacturing a semiconductor device
    7.
    发明授权
    Method of manufacturing a semiconductor device 有权

    公开(公告)号：US06955956B2

    公开(公告)日：2005-10-18

    申请号：US10034022

    申请日：2001-12-20

    申请人： Koichiro Tanaka ,  Setsuo Nakajima

    发明人： Koichiro Tanaka ,  Setsuo Nakajima

    IPC分类号： B23K26/06 ,  B23K26/067 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

    CPC分类号： B23K26/067 ,  B23K26/0604 ,  B23K26/0613 ,  H01L21/32136 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

    摘要： In a laser irradiation apparatus having low running costs as compared with a conventional apparatus and a laser beam irradiation method using the same, a crystalline semiconductor film having a crystal grain of a grain size equivalent to or larger than a conventional one is formed, and a TFT is manufactured by using the crystalline semiconductor film, so that the TFT enabling a high speed operation is realized. In a case where a laser beam of a short output time from a solid laser as a light source is irradiated to a semiconductor film, another laser beam is delayed from one laser beam, and the laser beams are synthesized to be irradiated to the semiconductor film, so that a cooling speed of the semiconductor film is made gentle, and it becomes possible to form the crystalline semiconductor film having the crystal grain of the grain size equivalent to or larger than that in a case where a laser beam having a long output time is irradiated to the semiconductor film. By manufacturing a TFT using such a crystalline semiconductor film, the TFT enabling the high speed operation can be realized.

    METHOD FOR PRODUCING DISPLAY DEVICE
    9.
    发明申请
    METHOD FOR PRODUCING DISPLAY DEVICE 有权
    制造显示装置的方法

    公开(公告)号：US20100311212A1

    公开(公告)日：2010-12-09

    申请号：US12844858

    申请日：2010-07-28

    申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Yasuyuki Arai

    发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Yasuyuki Arai

    IPC分类号： H01L21/762 ,  H01L21/84

    CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/13452 ,  G02F2001/13613 ,  H01L21/6835 ,  H01L24/24 ,  H01L24/82 ,  H01L27/1214 ,  H01L27/1218 ,  H01L2221/68368 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/24998 ,  H01L2224/82007 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

    摘要： In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first substrate that the electrical wirings are formed is opposite to the transparent conductive film on the second substrate. the semiconductor integrated circuit has substantially the same length as one side of a display screen (i.e., a matrix circuit) of the display device and is obtained by peeling it from another substrate and then forming it on the first substrate. Also, in a liquid crystal display device, a first substrate includes a matrix circuit and a peripheral driver circuit, and a second substrate is opposite to the first substrate, includes a matrix circuit and a peripheral driver circuit and has at least a size corresponding to the matrix circuit and the peripheral driver circuit. Spacers is provided between the first and second substrates. A seal material is formed outside the matrix circuits and the peripheral driver circuits in the first and second substrates. A liquid crystal material is filled inside a region enclosed by the seal material. A protective film is formed on the peripheral driver circuit has substantially a thickness equivalent to an interval between the substrates which is formed by the spacers.

    摘要翻译： 在液晶显示装置中，第一基板包括电布线和半导体集成电路，该半导体集成电路具有TFT并且与电布线电连接，第二基板在其表面上包括透明导电膜。 形成电气配线的第一基板的表面与第二基板上的透明导电膜相反。 半导体集成电路具有与显示装置的显示屏（即，矩阵电路）的一侧基本相同的长度，并且通过从另一基板剥离然后在第一基板上形成。 另外，在液晶显示装置中，第一基板包括矩阵电路和外围驱动电路，第二基板与第一基板相对，包括矩阵电路和外围驱动电路，并且至少具有与 矩阵电路和外围驱动电路。 隔板设置在第一和第二基板之间。 在第一和第二基板中的矩阵电路和外围驱动电路之外形成密封材料。 将液晶材料填充在由密封材料包围的区域内。 在外围驱动电路上形成保护膜，其厚度基本上等于由间隔物形成的基板之间的间隔。

    Semiconductor device and its manufacturing method
    10.
    发明授权
    Semiconductor device and its manufacturing method 有权
    半导体器件及其制造方法

    公开(公告)号：US07635866B2

    公开(公告)日：2009-12-22

    申请号：US11553009

    申请日：2006-10-26

    申请人： Setsuo Nakajima ,  Ritsuko Kawasaki

    发明人： Setsuo Nakajima ,  Ritsuko Kawasaki

    IPC分类号： H01L31/036 ,  H01L31/00

    CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78645

    摘要： Protrusions called ridges are formed on the surface of a crystalline semiconductor film formed by a laser crystallization method or the like. A heat absorbing layer are formed below a semiconductor film. When the semiconductor film is crystallized by laser, a temperature difference is produced between a semiconductor film 1010 positioned above a heat absorbing layer 1011 and a semiconductor film 1013 of the other region to produce a difference in thermal expansion at the boundary of the outside end 1015 of the heat absorbing layer. This difference produces a strain to form a surface wave. The surface wave starting at the outer periphery of the heat absorbing layer is formed in the vicinity of the heat absorbing layer. When the semiconductor layer is solidified after it is melted, the protrusions of the surface wave remain as protrusions after the semiconductor film is solidified.

    摘要翻译： 在通过激光结晶法等形成的结晶半导体膜的表面上形成称为隆起的突起。 在半导体膜的下方形成有吸热层。 当通过激光使半导体膜结晶时，在位于吸热层1011之上的半导体膜1010与另一区域的半导体膜1013之间产生温度差，以产生外端1015的边界处的热膨胀差 的吸热层。 该差异产生形成表面波的应变。 在吸热层的外周形成的表面波形成在吸热层的附近。 当半导体层在熔融之后固化时，半导体膜固化后表面波的突起保持为突起。