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公开(公告)号：US12289927B2
公开(公告)日：2025-04-29
申请号：US17705133
申请日：2022-03-25
Applicant: OMNIVISION TECHNOLOGIES, INC.
IPC: H10F39/00
Abstract: Image sensors, isolation structures, and techniques of fabrication are provided. An image sensor includes a source of electromagnetic radiation disposed on a substrate, a pixel array disposed on the substrate and thermally coupled with source of electromagnetic radiation, and an isolation structure disposed on the substrate between the source of electromagnetic radiation and the pixel array. The isolation structure can define a first reflective surface oriented on a first bias relative to a lateral axis of the pixel array and a second reflective surface oriented on a second bias relative to the lateral axis. The isolation structure can be configured to attenuate residual electromagnetic radiation reaching a proximal region of the pixel array by pairing a first reflection and a second reflection of the electromagnetic radiation by the first reflective surface and the second reflective surface.
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公开(公告)号：US12148777B2
公开(公告)日：2024-11-19
申请号：US17322399
申请日：2021-05-17
Applicant: OmniVision Technologies, Inc.
Inventor： Qin Wang , Chin Poh Pang
IPC: H01L27/146 , G02B5/00 , G02B5/20
Abstract: A crosstalk-suppressing image sensor includes a semiconductor substrate, an opaque layer, and a spectral filter. The semiconductor substrate includes a photodiode therein and is located beneath a light-exposure region of a back surface of the semiconductor substrate. The opaque layer is on the back surface, partially covers the light-exposure region, and has an opaque-layer thickness perpendicular to an image-plane direction parallel to the back surface. The spectral filter is adjacent to the opaque layer in the image-plane direction, and partially covers the light-exposure region.
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公开(公告)号：US11860383B2
公开(公告)日：2024-01-02
申请号：US17392023
申请日：2021-08-02
Applicant: OmniVision Technologies, Inc.
CPC classification number: G02B3/0043 , H04N25/61 , H04N25/70
Abstract: Embodiments disclosed herein reduce petal flare. A flare-suppressing image sensor includes a plurality of pixels including a first set of pixels and a second set of pixels. The flare-suppressing image sensor further includes plurality of microlenses, where each microlens is aligned to a respective one of the first set of pixels. The flare-suppressing image sensor further includes plurality of sub-microlens, where each microlens array is aligned to a respective one of the second set of pixels.
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公开(公告)号：US20230245977A1
公开(公告)日：2023-08-03
申请号：US18162066
申请日：2023-01-31
Applicant: OmniVision Technologies, Inc.
IPC: H01L23/544 , H01L27/146
CPC classification number: H01L23/544 , H01L27/14683 , H01L27/14643
Abstract: The present disclosure provides an alignment method for image sensor fabrication that involve forming a number of set of alignment marks using key process mask layers to improve alignment registration between process mask layers so as to reduce number of alignment transfer improves alignment accuracy between pixel elements. The present disclosure further provides a semiconductor device that includes such alignment mark structures.
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公开(公告)号：US11658198B2
公开(公告)日：2023-05-23
申请号：US16998783
申请日：2020-08-20
Applicant: OMNIVISION TECHNOLOGIES, INC.
IPC: H01L27/146
CPC classification number: H01L27/14643 , H01L27/14603 , H01L27/14609
Abstract: A device includes a photodiode, a floating diffusion region, a transfer gate, and a channel region. The photodiode is disposed in a semiconductor material. The photodiode is coupled to generate charge in response to incident light. The floating diffusion region is disposed in the semiconductor material. The transfer gate is disposed between the photodiode and the floating diffusion region. The channel region associated with the transfer gate is in the semiconductor material proximate to the transfer gate. The transfer gate is coupled to transfer the charge from the photodiode to the floating diffusion region through the channel region in response to a transfer signal coupled to be received by the transfer gate. The transfer gate includes a plurality of fin structures that extend into the semiconductor material and the photodiode.
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Patent Agency Ranking
公开(公告)号：US20210193723A1
公开(公告)日：2021-06-24
申请号：US16723922
申请日：2019-12-20
Applicant: OmniVision Technologies, Inc.
Inventor： Qin Wang , Woon iI Choi
IPC: H01L27/146
Abstract: A pixel cell includes an electrically conductive tunnel contact formed across a surface of a source follower gate, the tunnel contact having a first end, a second end, and an intermediate portion between the first and second ends. The first end is coupled to a floating diffusion FD, the second end is coupled to the first doped region of a reset transistor RST. The tunnel contact is formed in physical and in electrical contact with the surface of the source follower gate for a length of the intermediate portion substantially equal to a width of the source follower gate. Methods of forming the pixel cell are also described.
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公开(公告)号：US10964738B2
公开(公告)日：2021-03-30
申请号：US16149544
申请日：2018-10-02
Applicant: OmniVision Technologies, Inc.
Inventor： Gang Chen , Yuanwei Zheng , Qin Wang , Cunyu Yang , Guannan Chen , Duli Mao , Dyson Tai , Lindsay Grant , Eric Webster , Sing-Chung Hu
IPC: H01L27/146 , H04N5/378 , H04N9/04
Abstract: An image sensor includes one or more photodiodes disposed in a semiconductor material to receive image light and generate image charge, and a floating diffusion to receive the image charge from the one or more photodiodes. One or more transfer transistors is coupled to transfer image charge in the one or more photodiodes to the floating diffusion, and a source follower transistor is coupled to amplify the image charge in the floating diffusion. The source follower includes a gate electrode (coupled to the floating diffusion), source and drain electrodes, and an active region disposed in the semiconductor material between the source and drain electrodes. A dielectric material is disposed between the gate electrode and the active region and has a first thickness and a second thickness. The second thickness is greater than the first thickness, and the second thickness is disposed closer to the drain electrode than the first thickness.
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公开(公告)号：US10586825B2
公开(公告)日：2020-03-10
申请号：US16242924
申请日：2019-01-08
Applicant: OmniVision Technologies, Inc.
IPC: H01L27/148 , H01L27/30 , H01L27/146 , H01L23/00 , H01L21/768 , H01L27/32
Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge, and a metal grid, including a metal shield that is coplanar with the metal grid, disposed proximate to a backside of the semiconductor material. The metal grid is optically aligned with the plurality of photodiodes to direct the image light into the plurality of photodiodes, and a contact pad is disposed in a trench in the semiconductor material. The contact pad is coupled to the metal shield to ground the metal shield.
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公开(公告)号：US10304891B2
公开(公告)日：2019-05-28
申请号：US15873743
申请日：2018-01-17
Applicant: OmniVision Technologies, Inc.
IPC: H01L27/146 , H01L31/18
Abstract: An image sensor includes a semiconductor material including a plurality of photodiodes disposed in the semiconductor material. The image sensor also includes a first insulating material disposed proximate to a frontside of the semiconductor material, and an interconnect disposed in the first insulating material proximate to the frontside of the semiconductor material. A metal pad extends from a backside of the semiconductor material through the first insulating material and contacts the interconnect. A metal grid is disposed proximate to the backside of the semiconductor material, and the semiconductor material is disposed between the metal grid and the first insulating material disposed proximate to the frontside.
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公开(公告)号：US20180182803A1
公开(公告)日：2018-06-28
申请号：US15873743
申请日：2018-01-17
Applicant: OmniVision Technologies, Inc.
IPC: H01L27/146 , H01L31/18
CPC classification number: H01L27/14636 , H01L27/14629 , H01L27/14643 , H01L27/14685 , H01L27/14689 , H01L31/18
Abstract: An image sensor includes a semiconductor material including a plurality of photodiodes disposed in the semiconductor material. The image sensor also includes a first insulating material disposed proximate to a frontside of the semiconductor material, and an interconnect disposed in the first insulating material proximate to the frontside of the semiconductor material. A metal pad extends from a backside of the semiconductor material through the first insulating material and contacts the interconnect. A metal grid is disposed proximate to the backside of the semiconductor material, and the semiconductor material is disposed between the metal grid and the first insulating material disposed proximate to the frontside.
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