公开(公告)号：US20220005974A1

公开(公告)日：2022-01-06

申请号：US17480920

申请日：2021-09-21

Applicant: OSRAM OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar ,  Bjoern Muermann ,  Franz Eberhard

IPC: H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62

Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer.

公开(公告)号：US20200220032A1

公开(公告)日：2020-07-09

申请号：US16635575

申请日：2018-07-20

Applicant: Osram OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar

IPC: H01L31/0224 ,  H01L33/38 ,  H01L31/0232 ,  H01L33/46 ,  H01L31/18

Abstract: An optoelectronic semiconductor chip may include a semiconductor layer sequence provided for generating and/or receiving radiation. The chip may further include a first trench structure and a second trench structure formed in the semiconductor layer sequence. A first contact finger structure may electrically conductively connect the second trench structure to a first semiconductor layer of the semiconductor layer sequence. The first contact finger structure may adjoin a first side surface and/or a second side surface of the second trench structure at least in places. A second contact finger structure may electrically conductively connect to a second semiconductor layer of the semiconductor layer sequence where the second contact finger may be arranged in the first trench structure.

公开(公告)号：US10658548B2

公开(公告)日：2020-05-19

申请号：US16085934

申请日：2017-03-16

Applicant: OSRAM OLED GMBH

Inventor： Fabian Kopp ,  Attila Molnar

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/42

Abstract: A method for producing an optoelectronic semiconductor chip is specified, wherein a method step A) involves providing a semiconductor layer stack comprising a semiconductor layer of a first type, a semiconductor layer of a second type and an active layer arranged between the semiconductor layer of the first type and the semiconductor layer of the second type. Furthermore, the method comprises in a method step B) forming a mesa structure in the semiconductor layer of the first type, the semiconductor layer of the second type and the active layer. The method furthermore comprises in a method step C) applying a passivation layer to the mesa structure by means of vapour deposition or sputtering.

公开(公告)号：US12080827B2

公开(公告)日：2024-09-03

申请号：US18186037

申请日：2023-03-17

Applicant: OSRAM OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar ,  Bjoern Muermann ,  Franz Eberhard

IPC: H01L33/46 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L33/08 ,  H01L33/38

CPC classification number: H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L33/08 ,  H01L33/38 ,  H01L33/42

Abstract: In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.

公开(公告)号：US11164994B2

公开(公告)日：2021-11-02

申请号：US16310787

申请日：2017-06-26

Applicant: OSRAM OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar ,  Bjoern Muermann ,  Franz Eberhard

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/62 ,  H01L33/08

Abstract: A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.

公开(公告)号：US10833224B2

公开(公告)日：2020-11-10

申请号：US16462483

申请日：2017-12-18

Applicant: OSRAM OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar

IPC: H01L33/38 ,  H01L33/14 ,  H01L33/40 ,  H01L33/46 ,  H01L33/06 ,  H01L33/30

Abstract: An optoelectronic semiconductor chip includes a contact layer that impresses current directly into a first semiconductor region present in direct contact with a current web, the first semiconductor region is an n-side and a second semiconductor region is a p-side of a semiconductor layer sequence, and a second mirror layer is applied directly to a second semiconductor region, a plurality of contact fields and isolator fields are arranged alternately along a longitudinal direction of the current web, in the contact fields, the contact layer is in direct contact with the current web, and the isolator fields are free of the contact layer, and a first mirror layer is located between the current web and the first semiconductor region.

公开(公告)号：US10777708B2

公开(公告)日：2020-09-15

申请号：US16462349

申请日：2017-12-12

Applicant: OSRAM OLED GmbH

Inventor： Fabian Kopp ,  Attila Molnar

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/00 ,  H01L33/32 ,  H01L33/40

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence, a transparent substrate, at least one contact trench, at least one insulating trench, at least one current distribution trench, at least in the insulating trench, an electrically insulating mirror layer that reflects radiation generated in an active layer, at least one metallic current web in the contact trench configured for a current conduction along the contact trench and supplying current to a first semiconductor region, and at least one metallic busbar in the current distribution trench that energizes a second semiconductor region, wherein the contact trench, the isolating trench and the current distribution trench extend from a side of the second semiconductor region facing away from the substrate through the active layer into the first semiconductor region, and the contact trench is completely surrounded by the insulating trench, and the current distribution trench lies only outside the insulating trench.