公开(公告)号：US11023194B2

公开(公告)日：2021-06-01

申请号：US16314467

申请日：2017-06-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schwarz ,  Frank Singer ,  Jürgen Moosburger ,  Karl Engl ,  Alexander Martin

IPC: G09G1/00 ,  G06F3/14 ,  G09G3/32

Abstract: An arrangement includes at least two modules for a video wall including light-emitting components arranged on a carrier, wherein a drive circuit that selectively drives the component at the carrier is provided for each component, row lines and column lines are provided, each drive circuit connects to a row line and a column line, each drive circuit connects to power supply lines, the carrier includes plated-through holes that guide the row lines and the column lines onto an underside of the carrier, the two modules are arranged on a further carrier, the further carrier includes at least one recess, an electrical connector is arranged in the recess, and the electrical connector connects column lines and/or row lines of the two modules to one another.

公开(公告)号：US20180358514A1

公开(公告)日：2018-12-13

申请号：US15570699

申请日：2016-04-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sonja Tragl ,  Dominik Eisert ,  Stefan Lange ,  Nils Kaufmann ,  Alexander Martin ,  Krister Bergenek

IPC: H01L33/50 ,  A61B1/06

CPC classification number: H01L33/502 ,  A61B1/0653 ,  A61B1/0661 ,  C09K11/77 ,  H01L33/486 ,  H01L33/50 ,  H01L33/505 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.

公开(公告)号：US09983057B2

公开(公告)日：2018-05-29

申请号：US15568913

申请日：2016-04-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Nils Kaufmann ,  Alexander Martin

IPC: G01J3/18 ,  G01J3/10 ,  G01J3/42 ,  H01L33/58 ,  H01L33/50

CPC classification number: G01J3/108 ,  G01J3/0289 ,  G01J3/10 ,  G01J3/18 ,  G01J3/42 ,  H01L33/50 ,  H01L33/505 ,  H01L33/58

Abstract: An optoelectronic arrangement includes an optoelectronic semiconductor chip, a wavelength-converting element and a detector component, wherein the optoelectronic arrangement is configured to emit light with a first peak wavelength and to emit light with a second peak wavelength, the first peak wavelength is in the visible spectral range and the second peak wavelength is in the non-visible spectral range or the first peak wavelength is in the non-visible spectral range and the second peak wavelength is in the visible spectral range, and the optoelectronic arrangement emits the light whose peak wavelength is in the non-visible spectral range into a target area, and the detector component is configured to detect light backscattered from the target area and the peak wavelength of which is in the non-visible spectral range.