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53 条记录 (耗时 0.029 秒)

    FLUID DISCHARGE HEAD AND IMAGE FORMING APPARATUS
    14.
    发明申请
    FLUID DISCHARGE HEAD AND IMAGE FORMING APPARATUS 审中-公开
    流体排放头和图像形成装置

    公开(公告)号：US20100302323A1

    公开(公告)日：2010-12-02

    申请号：US12765350

    申请日：2010-04-22

    申请人： Masahiro YAGI ,  Kenji Asuwa ,  Dongsik Jang ,  Yoshikazu Akiyama ,  Eiichi Ohta ,  Yukitoshi Tajima ,  Takeshi Takemoto

    发明人： Masahiro YAGI ,  Kenji Asuwa ,  Dongsik Jang ,  Yoshikazu Akiyama ,  Eiichi Ohta ,  Yukitoshi Tajima ,  Takeshi Takemoto

    IPC分类号： B41J2/045

    CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/164 ,  B41J2002/14338 ,  B41J2002/14354

    摘要： A fluid discharge head includes a fluid chamber filled with ink; a discharge opening configured to discharge a droplet of ink from the fluid chamber; a plurality of piezoelectric elements configured as displacement generating units to provide kinetic energy to the ink for the discharge of the ink droplet; and a vibrating plate forming a part of the fluid chamber and connected to the piezoelectric elements, the vibrating plate being configured to transmit a displacement generated by the piezoelectric elements to the ink in the fluid chamber. The vibrating plate includes vibrating portions for the respective the piezoelectric elements. The vibrating portions are configured to be independently displaced for the corresponding piezoelectric elements, and at least one of the piezoelectric elements is configured as a pressure detecting unit to detect an ink pressure in the fluid chamber.

    摘要翻译： 流体排放头包括填充有油墨的流体室; 排出口，其构造成从所述流体室排出墨滴; 多个压电元件，其构造为位移产生单元，以向墨水提供动能以排出墨滴; 以及形成流体室的一部分并连接到压电元件的振动板，所述振动板被配置为将由压电元件产生的位移传递到流体室中的墨。 振动板包括各压电元件的振动部分。 振动部分被配置为相应的压电元件独立地移位，并且至少一个压电元件被配置为压力检测单元以检测流体室中的墨水压力。

    Electromechanical transducer element, droplet discharge head, and droplet discharge device
    16.
    发明授权
    Electromechanical transducer element, droplet discharge head, and droplet discharge device 有权
    机电换能器元件，液滴喷头和液滴喷射装置

    公开(公告)号：US08727505B2

    公开(公告)日：2014-05-20

    申请号：US13529304

    申请日：2012-06-21

    申请人： Satoshi Mizukami ,  Yoshikazu Akiyama ,  Masaru Shinkai ,  Keiji Ueda ,  Kanshi Abe ,  Takakazu Kihira ,  Naoya Kondo

    发明人： Satoshi Mizukami ,  Yoshikazu Akiyama ,  Masaru Shinkai ,  Keiji Ueda ,  Kanshi Abe ,  Takakazu Kihira ,  Naoya Kondo

    IPC分类号： B41J2/045

    CPC分类号： B41J2/14233 ,  B41J2002/14258 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/318

    摘要： Disclosed is an electromechanical transducer element that includes an electromechanical transducer film formed of a complex oxide (PZT) including lead (Pb), zirconium (Zr), and titanium (Ti). The electromechanical transducer film is formed by laminating plural PZT thin films until a thickness of the formed electromechanical transducer film becomes a predetermined thickness. When an atomic weight ratio (Pb/(Zr+Ti)) of average Pb included in the formed electromechanical transducer film is denoted by Pb(avg) and an atomic weight ratio (Pb/(Zr+Ti)) of Pb in any one of laminate interfaces of the plural PZT thin films is denoted by Pb(interface), the Pb(avg) is greater than or equal to 100 atomic percentage (at %) and less than or equal to 110 atomic percentage (at %), and a fluctuation ratio ΔPb=Pb(avg)−Pb(interface) of Pb in the laminate interface is less than or equal to 20 percent.

    摘要翻译： 公开了一种机电换能器元件，其包括由包括铅（Pb），锆（Zr）和钛（Ti）的复合氧化物（PZT）形成的机电换能器膜。 机电换能器膜通过层压多个PZT薄膜而形成，直到所形成的机电换能器膜的厚度成为预定厚度。 当在所形成的机电换能器膜中包含的平均Pb的原子重量比（Pb /（Zr + Ti））由Pb（avg）和Pb中的任何一种的原子量（Pb /（Zr + Ti）） 多个PZT薄膜的层叠界面由Pb（界面）表示，Pb（avg）大于或等于100原子百分比（at％）和小于或等于110原子百分比（at％），以及 层压界面中Pb的波动比＆Dgr; Pb = Pb（avg）-Pb（界面）小于或等于20％。

    Ferroelectric material, and semiconductor memory, optical recording medium and micro-displacement control device using the ferroelectric material
    19.
    发明授权
    Ferroelectric material, and semiconductor memory, optical recording medium and micro-displacement control device using the ferroelectric material 失效
    铁电材料和半导体存储器，光记录介质和使用铁电材料的微位移控制装置

    公开(公告)号：US5555219A

    公开(公告)日：1996-09-10

    申请号：US168770

    申请日：1993-12-16

    申请人： Yoshikazu Akiyama ,  Sachiko Kimura

    发明人： Yoshikazu Akiyama ,  Sachiko Kimura

    IPC分类号： C01B13/32 ,  C01G25/00 ,  C04B35/26 ,  C04B35/493 ,  C04B35/499 ,  G11B7/00 ,  G11B7/0055 ,  G11B7/30 ,  G11B9/02 ,  G11B11/00 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792

    CPC分类号： C04B35/26 ,  C04B35/493 ,  C04B35/499

    摘要： A ferroelectric material has hysteresis characteristics in the polarization--electric field relationship thereof, exhibits an antiferroelectric phase at room temperature, and carries out a structural phase transition from the antiferroelectric state to a ferroelectric phase with the application of an electric field thereto, and a phase transition electric field with which the antiferroelectric-to-ferroelectric phase transition is carried out is shifted to a lower electric field with the elevation of the temperature thereof, and a phase transition electric field with which a ferroelectric-to-antiferroelectric phase transition is carried out has a negative value. A semiconductor non-volatile memory, a rewritable optical recording medium, a highly integrated micro-displacement control device, and a shape memory device, each utilizing the above-mentioned ferroelectric material, are provided.

    摘要翻译： 铁电材料在其极化电场关系中具有滞后特性，在室温下表现出反铁电相，并且通过施加电场，从反铁电状态到铁电相进行结构相变， 进行反铁电 - 铁电相变的过渡电场随着其温度升高而转移到较低的电场，并且进行铁电 - 反铁电相变的相变电场 有负值。 提供了利用上述铁电体材料的半导体非易失性存储器，可重写光学记录介质，高度集成的微位移控制装置和形状记忆装置。

    Electromechanical conversion element, liquid drop ejection head, liquid drop ejection device, and image forming apparatus
    20.
    发明授权
    Electromechanical conversion element, liquid drop ejection head, liquid drop ejection device, and image forming apparatus 有权
    机电转换元件，液滴喷射头，液滴喷射装置和图像形成装置

    公开(公告)号：US08733906B2

    公开(公告)日：2014-05-27

    申请号：US13615399

    申请日：2012-09-13

    申请人： Satoshi Mizukami ,  Masaru Shinkai ,  Masahiro Ishimori ,  Yoshikazu Akiyama

    发明人： Satoshi Mizukami ,  Masaru Shinkai ,  Masahiro Ishimori ,  Yoshikazu Akiyama

    IPC分类号： B41J2/015

    CPC分类号： H01L41/0478 ,  B41J2/14233 ,  B41J2002/14491 ,  H01L41/081 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/318 ,  H01L41/319

    摘要： Disclosed is an electromechanical conversion element, including an electromechanical conversion film including a PZT, an upper electrode formed on a top of the electromechanical conversion film and including a first strontium ruthenium oxide, and a lower electrode formed on a bottom of the electromechanical conversion film and including a second strontium ruthenium oxide, wherein Sr-pzt/Sr-sr≦0.01, wherein Sr-pzt is a SIMS intensity for a secondary ion of strontium of the PZT at a position of ½ of a thickness of the electromechanical conversion film and Sr-sr is a SIMS intensity for a secondary ion of strontium of the second strontium ruthenium oxide at a position of ½ of a thickness of the lower electrode.

    摘要翻译： 公开了一种机电转换元件，包括机电转换膜，其包括PZT，形成在机电转换膜的顶部上并包括第一锶氧化钌的上电极和形成在机电转换膜的底部的下电极， 包括第二锶氧化钌，其中Sr-pzt / Sr-Sr＆nlE; 0.01，其中Sr-pzt是在机电转换膜的厚度的1/2的位置处的PZT的锶的二次离子的SIMS强度，Sr -Sr是在下电极的厚度的1/2的位置处的第二锶氧化钌的锶的二次离子的SIMS强度。