-
公开(公告)号:US20210092312A1
公开(公告)日:2021-03-25
申请号:US17116121
申请日:2020-12-09
Inventor: Masashi MURAKAMI , Kazuko NISHIMURA , Yasuo MIYAKE , Yasunori INOUE
IPC: H04N5/355
Abstract: An imaging device including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer; a voltage supply circuit that applies a bias voltage between the first electrode and the second electrode; an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor being configured to output a signal that corresponds to a potential of the gate; and a detection circuit that is configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range, in a case where the level detected by the detection circuit is less than a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range, in a case where the level detected by the detection circuit is greater than a second threshold value.
-
公开(公告)号:US20210006735A1
公开(公告)日:2021-01-07
申请号:US17026851
申请日:2020-09-21
Inventor: Yasuo MIYAKE , Masashi MURAKAMI , Tokuhiko TAMAKI , Yoshiaki SATOU
IPC: H04N5/353 , H01L27/30 , H01L27/146
Abstract: An imaging device including pixels having a photoelectric converter including a first and second electrode, a photoelectric conversion layer; a charge accumulation region electrically connected to the first electrode; and a signal detection circuit. The photoelectric converter is applied with a voltage between the first electrode and the second electrode, and the photoelectric converter has a characteristic, responsive to the voltage within a range from a first voltage to a second voltage, showing that a density of current passing between the first electrode and the second electrode when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident on the photoelectric conversion layer. A difference between the first voltage and the second voltage is 0.5 V or more, and the voltage supply circuit supplies a voltage between the first voltage and the second voltage to the second electrode in a non-exposure period.
-
公开(公告)号:US20190238769A1
公开(公告)日:2019-08-01
申请号:US16383013
申请日:2019-04-12
Inventor: Naoki SHIMASAKI , Masashi MURAKAMI
IPC: H04N5/363 , H04N5/3745 , H04N5/378
CPC classification number: H04N5/363 , H04N5/37455 , H04N5/37457 , H04N5/378
Abstract: An imaging device includes a photoelectric converter that generates signal charge; a charge storage node that stores the signal charge; a capacitive element connected to the charge storage node; and a first transistor connected to the charge storage node via the capacitive element, wherein switching between on-state and off-state of the first transistor causes an amount of saturated charge in the charge storage node to change.
-
公开(公告)号:US20180331141A1
公开(公告)日:2018-11-15
申请号:US16045553
申请日:2018-07-25
Inventor: Sanshiro SHISHIDO , Masashi MURAKAMI , Kazuko NISHIMURA
IPC: H01L27/146 , H04N5/378 , H04N5/374 , H04N5/355
CPC classification number: H01L27/14612 , H01L27/14609 , H01L27/14627 , H01L27/14643 , H04N5/355 , H04N5/35563 , H04N5/374 , H04N5/378
Abstract: In one general aspect, the techniques disclosed here feature an imaging device that includes: a semiconductor substrate; a first pixel cell including a first photoelectric converter in the semiconductor substrate, and a first capacitive element one end of which is electrically connected to the first photoelectric converter; and a second pixel cell including a second photoelectric converter in the semiconductor substrate. An area of the second photoelectric converter is larger than an area of the first photoelectric converter in a plan view.
-
公开(公告)号:US20180166479A1
公开(公告)日:2018-06-14
申请号:US15878902
申请日:2018-01-24
Inventor: Masashi MURAKAMI , Kazuko NISHIMURA , Yutaka ABE , Yoshiyuki MATSUNAGA , Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146 , H01L51/42
CPC classification number: H01L27/14609 , H01L27/14632 , H01L27/14636 , H01L27/14643 , H01L27/14665 , H01L51/42
Abstract: An imaging device includes a unit pixel cell including: a photoelectric converter that generates a signal charge through photoelectric conversion of incident light, and a signal detection circuit that detects an electric signal according to an amount of the signal charge, wherein the signal detection circuit includes: a first transistor that amplifies the electric signal, a gate of the first transistor being connected to the photoelectric converter, a second transistor having a source and a drain, one of the source and the drain being connected to the photoelectric converter, and a first capacitor having a first end and a second end, the first end being connected to the other of the source and the drain of the second transistor, the second end being connected to a first voltage source.
-
公开(公告)号:US20240365017A1
公开(公告)日:2024-10-31
申请号:US18662323
申请日:2024-05-13
Inventor: Kazuko NISHIMURA , Tokuhiko TAMAKI , Masashi MURAKAMI
IPC: H04N25/585 , H01L27/146 , H04N25/62 , H04N25/65 , H04N25/75 , H04N25/77 , H04N25/778
CPC classification number: H04N25/585 , H01L27/14614 , H01L27/14636 , H01L27/14643 , H04N25/62 , H04N25/65 , H04N25/75 , H04N25/77 , H04N25/778
Abstract: A camera system including an imaging device; and a signal processor. The imaging device includes; a first imaging cell having a first photoelectric converter generating a first signal; and a second imaging cell having a second photoelectric converter generating a second signal; and a capacitor having a first and second terminal, the first terminal electrically coupled to second photoelectric converter. An area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, the first imaging cell has a first number of saturation charges, and the second imaging cell has a second number of saturation charges, the number of saturation charges by the first photoelectric converter is greater than the number of saturation charges by the second photoelectric converter. The capacitor causes the second number of saturation charges to become greater than the first number of saturation charges.
-
公开(公告)号:US20230253422A1
公开(公告)日:2023-08-10
申请号:US18137916
申请日:2023-04-21
Inventor: Masashi MURAKAMI , Kazuko NISHIMURA , Yutaka ABE , Yoshiyuki MATSUNAGA , Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146
CPC classification number: H01L27/14609 , H01L27/14632 , H01L27/14643 , H01L27/14665 , H01L27/14636 , H10K30/00
Abstract: An imaging device including a semiconductor substrate; a photoelectric converter that converts incident light into a signal charge, the photoelectric converter being stacked on the semiconductor substrate; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element connected between the transistor and a voltage source or a ground. The transistor is configured to switch between a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode, and in a cross-sectional view, the capacitive element is located between the semiconductor substrate and the photoelectric converter.
-
公开(公告)号:US20210203867A1
公开(公告)日:2021-07-01
申请号:US17202060
申请日:2021-03-15
Inventor: Takayoshi Yamada , Yasuo MIYAKE , Masashi MURAKAMI
IPC: H04N5/363 , H04N5/378 , H04N5/351 , H01L27/146 , H04N5/3745 , H04N5/357 , H04N5/353 , H04N5/374
Abstract: An imaging device including a photoelectric converter that converts incident light into an electric charge; a transfer transistor; a first node coupled to the photoelectric converter via the transfer transistor; a first signal detection transistor having a gate coupled to the first node; a second signal detection transistor having a gate coupled to the photoelectric converter; a signal line coupled to one of a source and a drain of the first signal detection transistor; a first transistor coupled to the first node; and a second transistor coupled to the photoelectric converter, wherein one of the source and the drain of the first signal detection transistor is coupled to the first transistor, one of a source and a drain of the second signal detection transistor is coupled to the second transistor, and no transistor is coupled between the photoelectric converter and the gate of the second signal detection transistor.
-
公开(公告)号:US20190273880A1
公开(公告)日:2019-09-05
申请号:US16410893
申请日:2019-05-13
Inventor: Junji HIRASE , Yoshihiro SATO , Yoshinori TAKAMI , Masayuki TAKASE , Masashi MURAKAMI
IPC: H04N5/361 , H04N5/363 , H04N5/359 , H04N5/3745 , H04N5/369 , H01L27/146
Abstract: An imaging device includes a semiconductor layer including an impurity region of a first conductivity type, a photoelectric converter electrically connected to the impurity region, and a transistor having a gate of a second conductivity type different from the first conductivity type, a source and a drain, the transistor including the impurity region as one of the source and the drain, the gate being electrically connected to the impurity region.
-
公开(公告)号:US20190051693A1
公开(公告)日:2019-02-14
申请号:US16161903
申请日:2018-10-16
Inventor: Kazuko NISHIMURA , Yutaka ABE , Masashi MURAKAMI , Yoshiyuki MATSUNAGA
IPC: H01L27/146 , H04N5/378 , H04N5/357 , H04N5/363
CPC classification number: H01L27/14643 , H04N5/3575 , H04N5/363 , H04N5/378
Abstract: An imaging device having a pixel including a photoelectric converter that generates electric signal; first transistor having a gate coupled to the photoelectric converter; second transistor one of a source and a drain of which is coupled to one of a source and a drain of the first transistor; third transistor one of a source and a drain of which is coupled to the other of the source and the drain of the second transistor, the other of the source and the drain of the third transistor coupled to the photoelectric converter; first capacitor having a first and second ends, the first end coupled to the other of the source and the drain of the second transistor, first reference voltage applied to the second end; and second capacitor having a third and fourth ends, the third end coupled to the first end, the fourth end coupled to the photoelectric converter.
-
-
-
-
-
-
-
-
-