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    IMAGING DEVICE
    12.
    发明申请
    IMAGING DEVICE 审中-公开

    公开(公告)号：US20170230563A1

    公开(公告)日：2017-08-10

    申请号：US15497193

    申请日：2017-04-25

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： YOSHIAKI SATOU ,  YASUO MIYAKE ,  YASUNORI INOUE ,  TOKUHIKO TAMAKI

    IPC: H04N5/235 ,  H04N5/355

    Abstract: An imaging device includes a unit pixel cell. The unit pixel cell captures first data in a first exposure period and captures second data in a second exposure period different from the first exposure period, the first exposure period and the second exposure period being included in a frame period. A sensitivity per unit time of the unit pixel cell in the first exposure period is different from a sensitivity per unit time of the unit pixel cell in the second exposure period. The imaging device outputs multiple-exposure image data including at least the first data and the second data.

    SOLID-STATE IMAGING DEVICE, IMAGING MODULE, AND IMAGING APPARATUS
    13.
    发明申请
    SOLID-STATE IMAGING DEVICE, IMAGING MODULE, AND IMAGING APPARATUS 有权
    固态成像装置，成像模块和成像装置

    公开(公告)号：US20150280155A1

    公开(公告)日：2015-10-01

    申请号：US14668606

    申请日：2015-03-25

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： TOKUHIKO TAMAKI ,  MASAYUKI TAKASE ,  YASUHIKO ADACHI

    IPC: H01L51/44 ,  H01L51/42 ,  H01L27/30

    CPC classification number: H01L51/441 ,  H01L27/307 ,  H01L51/4273 ,  Y02E10/549

    Abstract: A solid-state imaging device according to an aspect of the present disclosure includes pixel including: a first and second electrode located in a same layer, the second electrode being located between the first electrode and the other first electrodes included in adjacent pixels; an organic photoelectric conversion film including a first surface and a second surface, the first surface being in contact with the first electrode and the second electrode; and a counter electrode located on the second surface. The organic photoelectric conversion film extends over the pixels. The first electrode is an electrode through which electrons or holes generated in the organic photoelectric conversion film are extracted. An area ratio of the first electrode to the each pixel is 25% or less. And a total area ratio of a sum of the first electrode and the second electrode to the each pixel is 40% or greater.

    Abstract translation: 根据本公开的一个方面的固态成像装置包括像素，包括：位于相同层中的第一和第二电极，第二电极位于第一电极和包括在相邻像素中的其它第一电极之间; 包括第一表面和第二表面的有机光电转换膜，所述第一表面与所述第一电极和所述第二电极接触; 和位于第二表面上的对电极。 有机光电转换膜在像素上延伸。 第一电极是提取在有机光电转换膜中产生的电子或空穴的电极。 第一电极与每个像素的面积比为25％以下。 并且，第一电极和第二电极的总和与各像素的总面积比为40％以上。

    IMAGING DEVICE COMPRISING MULTILAYER WIRING STRUCTURE
    16.
    发明申请
    IMAGING DEVICE COMPRISING MULTILAYER WIRING STRUCTURE 有权
    包含多层布线结构的成像装置

    公开(公告)号：US20160293654A1

    公开(公告)日：2016-10-06

    申请号：US15073611

    申请日：2016-03-17

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： YUUKO TOMEKAWA ,  TOKUHIKO TAMAKI

    IPC: H01L27/146 ,  H04N5/363

    CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14665 ,  H01L27/307 ,  H04N5/23245 ,  H04N5/363

    Abstract: An imaging device includes: a semiconductor substrate; a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion film, supported on the semiconductor substrate, and generating a signal by performing photoelectric conversion on incident light; a multilayer wiring structure including an upper wiring layer and a lower wiring layer provided between the semiconductor substrate and the second electrode; and a signal detection circuit provided in the semiconductor substrate and the multilayer wiring structure, including a signal detection transistor and a first capacitance element, and detecting the signal. The signal detection transistor includes a gate and a source region and a drain region, the first capacitance element includes a first lower electrode, a first upper electrode, and a dielectric film disposed therebetween, the upper wiring layer is disposed between the second electrode and the gate, and the upper wiring layer includes the first upper electrode.

    Abstract translation: 一种成像装置包括：半导体衬底; 包括支撑在半导体衬底上的第一电极，第二电极和光电转换膜的光电转换元件，并通过对入射光进行光电转换来产生信号; 多层布线结构，包括设置在所述半导体基板和所述第二电极之间的上布线层和下布线层; 以及设置在半导体衬底和多层布线结构中的信号检测电路，包括信号检测晶体管和第一电容元件，并检测该信号。 信号检测晶体管包括栅极和源极区域和漏极区域，第一电容元件包括第一下部电极，第一上部电极和设置在其间的电介质膜，上部布线层设置在第二电极和第二电极之间， 栅极，上部布线层包括第一上部电极。

    PREPARATION ELEMENT SET, PREPARATION, MANUFACTURING METHOD OF PREPARATION, IMAGING APPARATUS, AND IMAGING METHOD
    17.
    发明申请
    PREPARATION ELEMENT SET, PREPARATION, MANUFACTURING METHOD OF PREPARATION, IMAGING APPARATUS, AND IMAGING METHOD 有权
    制备元素组，制备，制备方法，成像装置和成像方法

    公开(公告)号：US20150377866A1

    公开(公告)日：2015-12-31

    申请号：US14741708

    申请日：2015-06-17

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： HIDETO MOTOMURA ,  YOSHIHISA KATO ,  TSUYOSHI TANAKA ,  TOKUHIKO TAMAKI

    IPC: G01N33/50 ,  G02B21/06 ,  G02B21/36

    CPC classification number: G02B21/06 ,  G02B21/362

    Abstract: A preparation element set including an image sensor including a sensor surface, a sensor back surface, and a board; a package including a front surface, a back surface, and terminals on the back surface, the front surface touching or facing the sensor back surface; and a transparent plate facing the sensor surface with a subject placed therebetween, wherein the board includes a board surface and a board back surface, a distance between the board surface and the sensor surface is less than a distance between the board back surface and the sensor surface, a distance between the board surface and the sensor back surface is more than a distance between the board back surface and the sensor back surface, conductive holes pierce the board from the board surface to the board back surface, and conductors on the board surface are electrically connected to terminals by using the conductive holes.

    Abstract translation: 一种包括传感器表面，传感器背面和板的图像传感器的准备元件组; 包括前表面，后表面和后表面上的端子的封装，前表面接触或面向传感器背表面; 以及面对传感器表面的透明板，其间放置有被摄体，其中所述板包括板表面和板背面，所述板表面和所述传感器表面之间的距离小于所述板背面和所述传感器之间的距离 表面之间，板表面和传感器后表面之间的距离大于板背面与传感器背面之间的距离，导电孔从板表面到板背表面刺穿板，并且板表面上的导体 通过使用导电孔与端子电连接。

    IMAGING DEVICE
    18.
    发明申请
    IMAGING DEVICE 审中-公开
    成像装置

    公开(公告)号：US20150340393A1

    公开(公告)日：2015-11-26

    申请号：US14714293

    申请日：2015-05-17

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： TOKUHIKO TAMAKI ,  JUNJI HIRASE ,  SHIGEO YOSHII

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14643

    Abstract: An imaging device includes a semiconductor substrate and at least one unit pixel cell provided to a surface of the semiconductor substrate. Each of the at least one unit pixel cell includes: a photoelectric converter including a pixel electrode and a photoelectric conversion layer located on the pixel electrode, the photoelectric converter converting incident light into electric charges; a charge detection transistor that includes a part of the semiconductor substrate and detects the electric charges; and a reset transistor that includes a gate electrode and initializes a voltage of the photoelectric converter. The pixel electrode is located above the charge detection transistor. The reset transistor is located between the charge detection transistor and the pixel electrode. When viewed from a direction normal to the surface of the semiconductor substrate, at least a part of the gate electrode is located outside the pixel electrode.

    Abstract translation: 成像装置包括半导体衬底和设置在半导体衬底的表面上的至少一个单位像素单元。 所述至少一个单位像素单元中的每一个包括：光电转换器，包括像素电极和位于所述像素电极上的光电转换层，所述光电转换器将入射光转换成电荷; 电荷检测晶体管，其包括半导体衬底的一部分并检测电荷; 以及包括栅电极并初始化光电转换器的电压的复位晶体管。 像素电极位于电荷检测晶体管的上方。 复位晶体管位于电荷检测晶体管和像素电极之间。 当从垂直于半导体衬底的表面的方向观察时，栅电极的至少一部分位于像素电极的外部。

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