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公开(公告)号：US10741600B2
公开(公告)日：2020-08-11
申请号：US16186243
申请日：2018-11-09
Inventor： Tokuhiko Tamaki , Junji Hirase , Shigeo Yoshii
IPC: H01L27/146
Abstract: An imaging device including a semiconductor substrate; and a pixel. The pixel includes a photoelectric converter having a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, the photoelectric converter located above a surface of the semiconductor substrate; a first transistor that includes a part of the semiconductor substrate and detects electric charges; and a second transistor that includes a gate electrode and initializes a voltage of the first electrode. The first electrode, the second transistor, and the first transistor are arranged in that order toward the semiconductor substrate from the first electrode in cross sectional view, and when viewed from the direction normal to the surface of the semiconductor substrate, a part of the gate electrode overlaps the first electrode, and another part of the gate electrode does not overlap the first electrode.
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公开(公告)号：US10658430B2
公开(公告)日：2020-05-19
申请号：US15939381
申请日：2018-03-29
Inventor： Takeyoshi Tokuhara , Tokuhiko Tamaki
IPC: H01L27/30 , H01L51/42 , H01L51/44 , G01J1/04 , G01J1/42 , G01J5/08 , G01J5/24 , H01L51/00 , H04N5/33 , H04N5/378
Abstract: A photosensor includes: a first electrode; a second electrode; a photoelectric conversion layer that is located between the first and second electrodes and generates electric charges; a first charge blocking layer located between the first electrode and the photoelectric conversion layer; a second charge blocking layer located between the second electrode and the photoelectric conversion layer; a voltage supply circuit that applies a voltage to at least one of the first and second electrodes such that an electric field is generated in the photoelectric conversion layer; and a detection circuit that detects a signal corresponding to a change in capacitance between the first and second electrodes. The first charge blocking layer suppresses movement of electric charges between the photoelectric conversion layer and the first electrode. The second charge blocking layer suppresses movement of electric charges between the photoelectric conversion layer and the second electrode.
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公开(公告)号：US10057518B2
公开(公告)日：2018-08-21
申请号：US15423397
申请日：2017-02-02
Inventor： Takayoshi Yamada , Masayuki Takase , Tokuhiko Tamaki , Masashi Murakami
CPC classification number: H04N5/359 , H01L27/14603 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14623 , H01L27/14636 , H01L27/14645 , H01L27/14667 , H04N5/23232 , H04N5/265 , H04N5/357 , H04N5/361 , H04N5/374 , H04N5/378
Abstract: An imaging device comprises at least one unit pixel cell. Each of them comprises: a photoelectric conversion layer having a first and second surfaces; a pixel electrode and a shield electrode located on the first surface and separated from each other, a shield voltage being applied to the shield electrode; an upper electrode located on the second surface and opposing to the pixel electrode and the shield electrode, a counter voltage being applied to the upper electrode; a charge accumulation node electrically connected to the pixel electrode; and a charge detection circuit electrically connected to the charge accumulation node. An absolute value of a difference between the shield voltage and the counter voltage is larger than an absolute value of a difference between the counter voltage and a voltage of the pixel electrode.
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公开(公告)号：US09881960B2
公开(公告)日：2018-01-30
申请号：US14556093
申请日：2014-11-28
Inventor： Yoshihiro Sato , Ryohei Miyagawa , Tokuhiko Tamaki , Junji Hirase , Yoshiyuki Ohmori , Yoshiyuki Matsunaga
IPC: H01L27/146 , H04N5/363 , H04N5/378 , H01L21/266 , H01L21/8234
CPC classification number: H01L27/14643 , H01L21/266 , H01L21/823456 , H01L21/823481 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/14665 , H01L27/14689 , H04N5/363 , H04N5/378
Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.
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公开(公告)号：US09876046B2
公开(公告)日：2018-01-23
申请号：US15073611
申请日：2016-03-17
Inventor： Yuuko Tomekawa , Tokuhiko Tamaki
IPC: H01L27/146 , H04N5/363 , H04N5/232 , H01L27/30
CPC classification number: H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14623 , H01L27/14636 , H01L27/14665 , H01L27/307 , H04N5/23245 , H04N5/363
Abstract: An imaging device includes: a semiconductor substrate; a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion film, supported on the semiconductor substrate, and generating a signal by performing photoelectric conversion on incident light; a multilayer wiring structure including an upper wiring layer and a lower wiring layer provided between the semiconductor substrate and the second electrode; and a signal detection circuit provided in the semiconductor substrate and the multilayer wiring structure, including a signal detection transistor and a first capacitance element, and detecting the signal. The signal detection transistor includes a gate and a source region and a drain region, the first capacitance element includes a first lower electrode, a first upper electrode, and a dielectric film disposed therebetween, the upper wiring layer is disposed between the second electrode and the gate, and the upper wiring layer includes the first upper electrode.
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Patent Agency Ranking
公开(公告)号：US12225310B2
公开(公告)日：2025-02-11
申请号：US18505019
申请日：2023-11-08
Inventor： Tokuhiko Tamaki
IPC: H04N25/75 , H01L27/146 , H04N23/54 , H04N23/55 , H04N25/585 , H04N25/702
Abstract: An image pickup module including an imaging device which includes: a first photoelectric converter that converts incident light into first signal charges; a first node into which the first signal charges are input; a second photoelectric converter that converts incident light into second signal charges; and a second node into which the second signal charges are input. The image pickup module further including a signal processing circuit that processes an output signal from the imaging device, where an area of the second photoelectric converter is greater than an area of the first photoelectric converter in a plan view, and capacitance of the first node is greater than capacitance of the second node.
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公开(公告)号：US11637976B2
公开(公告)日：2023-04-25
申请号：US17124278
申请日：2020-12-16
Inventor： Kazuko Nishimura , Tokuhiko Tamaki , Masashi Murakami
IPC: H04N5/378 , H04N5/363 , H04N5/369 , H01L27/146 , H04N5/355 , H04N5/3745 , H04N5/359
Abstract: An imaging device including: a first photoelectric converter that generates a first signal by photoelectric conversion; a first transistor having a gate configured to be electrically coupled to the first photoelectric converter; a second photoelectric converter that generates a second signal by photoelectric conversion; a capacitor having a first terminal and a second terminal, the first terminal being configured to be electrically coupled to second photoelectric converter, a first potential being applied to the second terminal; and a switch element provided between the gate of the first transistor and the first terminal of the capacitor.
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公开(公告)号：US20220303448A1
公开(公告)日：2022-09-22
申请号：US17834558
申请日：2022-06-07
Inventor： Yoshiaki SATOU , Yasuo Miyake , Yasunori Inoue , Tokuhiko Tamaki
Abstract: An imaging device including pixels and processing circuitry, where the pixels capture a first image in a first exposure period within a frame period and capture a second image in a second exposure period within the frame period to generate multiple-exposure image data that include the first image and the second image in a multiplexed state, the second exposure period being different from the first exposure period, the second image being different from the first image in brightness or color, and the processing circuitry detects an image of a moving subject from the multiple-exposure image data.
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公开(公告)号：US11172155B2
公开(公告)日：2021-11-09
申请号：US16402699
申请日：2019-05-03
Inventor： Tokuhiko Tamaki
Abstract: An imaging device includes: a first pixel including a first photoelectric converter that converts incident light into first signal charges, and a first charge storage node that accumulates the first signal charges; and a second pixel including a second photoelectric converter that converts incident light into second signal charges, and a second charge storage node that accumulates the second signal charges. An area of the second photoelectric converter is greater than an area of the first photoelectric converter in a plan view. Capacitance of the first charge storage node is greater than capacitance of the second charge storage node.
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公开(公告)号：US10453899B2
公开(公告)日：2019-10-22
申请号：US15945790
申请日：2018-04-05
Inventor： Naoki Shimasaki , Tokuhiko Tamaki , Sanshiro Shishido
IPC: H01L27/30 , H04N5/3745 , H01L51/42 , H01L51/44 , H04N5/355 , G01S17/08 , G01J1/44 , H01L27/146 , H04N5/374 , G01S7/486 , H01L27/28 , H01L51/00 , H04N5/378 , H04N5/357 , H04N5/359
Abstract: A photodetector includes: a semiconductor substrate including first and second impurity regions; a gate insulating layer located on a region of the semiconductor substrate, the region being between the first and second impurity regions, the gate insulating layer including a photoelectric conversion layer; a gate electrode located on the gate insulating layer and having a light-transmitting property; a first charge transfer channel transferring signal charges corresponding to a current occurring between the first impurity region and the second impurity region depending on a change in a dielectric constant of the photoelectric conversion layer caused by light incidence on the photoelectric conversion layer; a second charge transfer channel diverging from the first charge transfer channel; a first charge storage storing charges, among the signal charges, transferred via the second charge transfer channel; and a first gate switching transfer and shutdown of charges passing through the second charge transfer channel.
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