公开(公告)号：US08530340B2

公开(公告)日：2013-09-10

申请号：US12556377

申请日：2009-09-09

申请人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

发明人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262

摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

摘要翻译： 用于沉积诸如外延Ge和SiGe膜的外延膜的方法。 在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。 导致平滑，薄，相对缺陷的Ge或SiGe层。 还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

公开(公告)号：US20130040440A1

公开(公告)日：2013-02-14

申请号：US13613003

申请日：2012-09-13

申请人： Thomas N. Adam ,  Hong He ,  Alexander Reznicek ,  Devendra K. Sadana ,  Paul D. Brabant ,  Keith Chung ,  Manabu Shinriki

发明人： Thomas N. Adam ,  Hong He ,  Alexander Reznicek ,  Devendra K. Sadana ,  Paul D. Brabant ,  Keith Chung ,  Manabu Shinriki

IPC分类号： H01L21/20

CPC分类号： H01L21/0237 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02661

摘要： A method of depositing an epitaxial layer that includes chemically cleaning the deposition surface of a semiconductor substrate and treating the deposition surface of the semiconductor substrate with a hydrogen containing gas at a pre-bake temperature. The hydrogen containing gas treatment may be conducted in an epitaxial deposition chamber. The hydrogen containing gas removes oxygen-containing material from the deposition surface of the semiconductor substrate. The deposition surface of the semiconductor substrate may then be treated with a gas flow comprised of at least one of hydrochloric acid (HCl), germane (GeH4), and dichlorosilane (H2SiCl2) that is introduced to the epitaxial deposition chamber as temperature is decreased from the pre-bake temperature to an epitaxial deposition temperature. At least one source gas may be applied to the deposition surface for epitaxial deposition of a material layer.

公开(公告)号：US20120295421A1

公开(公告)日：2012-11-22

申请号：US13475503

申请日：2012-05-18

申请人： Paul D. Brabant ,  Keith Chung ,  Hong He ,  Devendra K. Sadana ,  Manabu Shinriki

发明人： Paul D. Brabant ,  Keith Chung ,  Hong He ,  Devendra K. Sadana ,  Manabu Shinriki

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  C23C16/30 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02636

摘要： Cyclic deposit and etch (CDE) selective epitaxial growth employs an etch chemistry employing a combination of hydrogen chloride and a germanium-containing gas to provide selective deposition of a silicon germanium alloy at temperatures lower than 625° C. High strain epitaxial silicon germanium alloys having a germanium concentration greater than 35 atomic percent in a temperature range between 400° C. and 550° C. A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium-containing precursor gas is employed to deposit the silicon germanium alloy with thickness uniformity and at a high deposition rate during each deposition step in this temperature range. Presence of the germanium-containing gas in the etch chemistry enhances the etch rate of the deposited silicon germanium alloy material during the etch step.

摘要翻译： 循环沉积和蚀刻（CDE）选择性外延生长采用采用氯化氢和含锗气体的组合的蚀刻化学法，以在低于625℃的温度下提供硅锗合金的选择性沉积。具有 在400℃和550℃之间的温度范围内的锗浓度大于35原子％。具有式SinH2n + 2的高阶硅烷，其中n是大于3的整数，与锗 - 在该温度范围内的每个沉积步骤中，使用含有前体气体来沉积具有厚度均匀性和高沉积速率的硅锗合金。 蚀刻化学中含锗气体的存在增强了在蚀刻步骤期间沉积的硅锗合金材料的蚀刻速率。

公开(公告)号：US07682947B2

公开(公告)日：2010-03-23

申请号：US11755528

申请日：2007-05-30

申请人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

发明人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262

摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

摘要翻译： 用于沉积诸如外延Ge和SiGe膜的外延膜的方法。 在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。 导致平滑，薄，相对缺陷的Ge或SiGe层。 还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

公开(公告)号：US20100006024A1

公开(公告)日：2010-01-14

申请号：US12556377

申请日：2009-09-09

申请人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

发明人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC分类号： C30B23/04

CPC分类号： C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262

摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

摘要翻译： 用于沉积诸如外延Ge和SiGe膜的外延膜的方法。 在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。 导致平滑，薄，相对缺陷的Ge或SiGe层。 还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

公开(公告)号：US07115521B2

公开(公告)日：2006-10-03

申请号：US10993024

申请日：2004-11-18

申请人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

发明人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02661

摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.