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    EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2
    1.
    发明申请
    EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2 审中-公开
    首先使用HCl / GeH4 / H2SiCl2表面清洁的外延工艺

    公开(公告)号：US20130040438A1

    公开(公告)日：2013-02-14

    申请号：US13206248

    申请日：2011-08-09

    申请人： Thomas N. Adam ,  Hong He ,  Alexander Reznicek ,  Devendra K. Sadana ,  Paul D. Brabant ,  Keith Chung ,  Manabu Shinriki

    发明人： Thomas N. Adam ,  Hong He ,  Alexander Reznicek ,  Devendra K. Sadana ,  Paul D. Brabant ,  Keith Chung ,  Manabu Shinriki

    IPC分类号： H01L21/205 ,  H01L21/322

    CPC分类号： H01L21/0237 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02661

    摘要： A method of depositing an epitaxial layer that includes chemically cleaning the deposition surface of a semiconductor substrate and treating the deposition surface of the semiconductor substrate with a hydrogen containing gas at a pre-bake temperature. The hydrogen containing gas treatment may be conducted in an epitaxial deposition chamber. The hydrogen containing gas removes oxygen-containing material from the deposition surface of the semiconductor substrate. The deposition surface of the semiconductor substrate may then be treated with a gas flow comprised of at least one of hydrochloric acid (HCl), germane (GeH4), and dichlorosilane (H2SiCl2) that is introduced to the epitaxial deposition chamber as temperature is decreased from the pre-bake temperature to an epitaxial deposition temperature. At least one source gas may be applied to the deposition surface for epitaxial deposition of a material layer.

    摘要翻译： 一种沉积外延层的方法，包括化学清洗半导体衬底的沉积表面，并在预烘烤温度下用含氢气体处理半导体衬底的沉积表面。 含氢气体处理可以在外延沉积室中进行。 含氢气体从半导体衬底的沉积表面去除含氧材料。 然后可以用包含至少一种盐酸（HCl），锗烷（GeH4）和二氯硅烷（H 2 SiCl 2））的气流来处理半导体衬底的沉积表面，该气流随着温度从 预烘烤温度达到外延沉积温度。 可以将至少一种源气体施加到沉积表面，用于材料层的外延沉积。

    Low temperature selective epitaxy of silicon germanium alloys employing cyclic deposit and etch
    3.
    发明授权
    Low temperature selective epitaxy of silicon germanium alloys employing cyclic deposit and etch 有权
    采用循环沉积和蚀刻的硅锗合金的低温选择性外延

    公开(公告)号：US08642454B2

    公开(公告)日：2014-02-04

    申请号：US13475503

    申请日：2012-05-18

    申请人： Paul D. Brabant ,  Keith Chung ,  Hong He ,  Devendra K. Sadana ,  Manabu Shinriki

    发明人： Paul D. Brabant ,  Keith Chung ,  Hong He ,  Devendra K. Sadana ,  Manabu Shinriki

    IPC分类号： H01L21/36 ,  H01L21/20

    CPC分类号： H01L21/0262 ,  C23C16/30 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02636

    摘要： Cyclic deposit and etch (CDE) selective epitaxial growth employs an etch chemistry employing a combination of hydrogen chloride and a germanium-containing gas to provide selective deposition of a silicon germanium alloy at temperatures lower than 625° C. High strain epitaxial silicon germanium alloys having a germanium concentration greater than 35 atomic percent in a temperature range between 400° C. and 550° C. A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium-containing precursor gas is employed to deposit the silicon germanium alloy with thickness uniformity and at a high deposition rate during each deposition step in this temperature range. Presence of the germanium-containing gas in the etch chemistry enhances the etch rate of the deposited silicon germanium alloy material during the etch step.

    摘要翻译： 循环沉积和蚀刻（CDE）选择性外延生长采用采用氯化氢和含锗气体的组合的蚀刻化学法，以在低于625℃的温度下提供硅锗合金的选择性沉积。具有 在400℃和550℃之间的温度范围内的锗浓度大于35原子％。具有式SinH2n + 2的高阶硅烷，其中n是大于3的整数，与锗 - 在该温度范围内的每个沉积步骤中，使用含有前体气体来沉积具有厚度均匀性和高沉积速率的硅锗合金。 蚀刻化学中含锗气体的存在增强了在蚀刻步骤期间沉积的硅锗合金材料的蚀刻速率。

    LOW TEMPERATURE SELECTIVE EPITAXY OF SILICON GERMANIUM ALLOYS EMPLOYING CYCLIC DEPOSIT AND ETCH
    4.
    发明申请
    LOW TEMPERATURE SELECTIVE EPITAXY OF SILICON GERMANIUM ALLOYS EMPLOYING CYCLIC DEPOSIT AND ETCH 有权
    使用循环沉积和蚀刻的硅锗合金的低温选择性外延

    公开(公告)号：US20120295421A1

    公开(公告)日：2012-11-22

    申请号：US13475503

    申请日：2012-05-18

    申请人： Paul D. Brabant ,  Keith Chung ,  Hong He ,  Devendra K. Sadana ,  Manabu Shinriki

    发明人： Paul D. Brabant ,  Keith Chung ,  Hong He ,  Devendra K. Sadana ,  Manabu Shinriki

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  C23C16/30 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02636

    摘要： Cyclic deposit and etch (CDE) selective epitaxial growth employs an etch chemistry employing a combination of hydrogen chloride and a germanium-containing gas to provide selective deposition of a silicon germanium alloy at temperatures lower than 625° C. High strain epitaxial silicon germanium alloys having a germanium concentration greater than 35 atomic percent in a temperature range between 400° C. and 550° C. A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium-containing precursor gas is employed to deposit the silicon germanium alloy with thickness uniformity and at a high deposition rate during each deposition step in this temperature range. Presence of the germanium-containing gas in the etch chemistry enhances the etch rate of the deposited silicon germanium alloy material during the etch step.

    摘要翻译： 循环沉积和蚀刻（CDE）选择性外延生长采用采用氯化氢和含锗气体的组合的蚀刻化学法，以在低于625℃的温度下提供硅锗合金的选择性沉积。具有 在400℃和550℃之间的温度范围内的锗浓度大于35原子％。具有式SinH2n + 2的高阶硅烷，其中n是大于3的整数，与锗 - 在该温度范围内的每个沉积步骤中，使用含有前体气体来沉积具有厚度均匀性和高沉积速率的硅锗合金。 蚀刻化学中含锗气体的存在增强了在蚀刻步骤期间沉积的硅锗合金材料的蚀刻速率。

    Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional Structures
    5.
    发明申请
    Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional Structures 审中-公开
    用于三维结构的高掺杂含Si材料的选择性和保形外延的方法

    公开(公告)号：US20140120678A1

    公开(公告)日：2014-05-01

    申请号：US14063118

    申请日：2013-10-25

    申请人： Manabu Shinriki ,  Paul Brabant ,  Keith Chung, JR.

    发明人： Manabu Shinriki ,  Paul Brabant ,  Keith Chung, JR.

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66795 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639

    摘要： The present invention addresses the key challenges in FinFET fabrication, that is, the fabrications of thin, uniform fins and also reducing the source/drain series resistance. More particularly, this application relates to FinFET fabrication techniques utilizing tetrasilane to enable conformal deposition with high doping using phosphate, arsenic and boron as dopants thereby creating thin fins having uniform thickness (uniformity across devices) as well as smooth, vertical sidewalls, while simultaneously reducing the parasitic series resistance.

    摘要翻译： 本发明解决了FinFET制造中的关键挑战，即薄的均匀散热片的制造，并且还减少了源/漏串联电阻。 更具体地说，本申请涉及利用四硅烷使磷酸盐，砷和硼作为掺杂剂进行高掺杂的保形沉积的FinFET制造技术，从而产生具有均匀厚度（均匀性的器件）以及平滑的垂直侧壁的薄翅片，同时减少 寄生串联电阻。

    Plasma-Assisted Deposition Method and System for Carrying Out the Same
    6.
    发明申请
    Plasma-Assisted Deposition Method and System for Carrying Out the Same 审中-公开
    等离子辅助沉积方法及其执行系统

    公开(公告)号：US20070259131A1

    公开(公告)日：2007-11-08

    申请号：US11660649

    申请日：2006-08-25

    申请人： Yasuo Kobayashi ,  Kenichi Nishizawa ,  Takatoshi Kameshima ,  Ryuichiro Isaki ,  Manabu Shinriki

    发明人： Yasuo Kobayashi ,  Kenichi Nishizawa ,  Takatoshi Kameshima ,  Ryuichiro Isaki ,  Manabu Shinriki

    IPC分类号： H01L21/314 ,  H01L21/31 ,  H01L21/768

    CPC分类号： H01L21/0212 ,  C23C16/26 ,  C23C16/4402 ,  H01L21/02274 ,  H01L21/3127

    摘要： A fluorine-containing carbon film excellent in heat stability is formed by using C5F8 gas having a moisture content of 60×10−9 volume ratio or below. A purifier 2 packed with particles having hydrophilic or reducing surface layers is placed in a gas supply line connecting a process gas source 1 for supplying C5F8 gas and a film deposition unit 3 for depositing a fluorine-containing carbon film on a substrate by using a plasma produced by ionizing C5F8 gas. C5F8 gas is passed through the purifier 2 to remove moisture from the C5F8 gas. The C5F8 gas supplied to the film deposition unit 3 to deposit a fluorine-containing carbon film has a moisture content on the order of 20×10−9 volume ratio. A fluorine-containing carbon film thus deposited contains a very small amount of moisture. Consequently, desorption of fluorine due to moisture contained in the fluorine-containing carbon film when the fluorine-containing carbon film is heated by a subsequent heating process is not likely to occur and the fluorine-containing carbon film has high heat stability.

    摘要翻译： 通过使用水分含量为60×10 -9体积比的C 5 N 5 S 8气体形成热稳定性优异的含氟碳膜 或以下。 填充有具有亲水性或还原性表面层的颗粒的净化器2放置在连接用于供应C 5 C 8气体的处理气体源1和膜沉积物的气体供应管线 单元3，用于通过使用通过电离C 5 C 8气体产生的等离子体在基板上沉积含氟碳膜。 气体通过净化器2以从C 5 C 8气体中除去水分。 供给到成膜单元3以沉积含氟碳膜的C 5 C 8 N 8气体的水分含量为20×10 -9 / SUP>体积比。 这样沉积的含氟碳膜含有非常少量的水分。 因此，通过随后的加热工序加热含氟碳膜时，由于含氟碳膜所含的水分的氟解吸不易发生，含氟碳膜的热稳定性高。

    Cleaning gas and cleaning method
    10.
    发明申请
    Cleaning gas and cleaning method 审中-公开
    清洁气体和清洁方法

    公开(公告)号：US20050096238A1

    公开(公告)日：2005-05-05

    申请号：US10969990

    申请日：2004-10-22

    申请人： Ryuichiro Isaki ,  Manabu Shinriki

    发明人： Ryuichiro Isaki ,  Manabu Shinriki

    IPC分类号： H05H1/46 ,  C11D7/28 ,  C23C16/44 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/311 ,  B08B6/00 ,  C11D1/00

    CPC分类号： C23C16/4405 ,  H01L21/31116 ,  Y02C20/30 ,  Y02P70/605

    摘要： A cleaning gas improves the etching reaction rate of cleaning gas including a fluorocarbon gas, and increases the cleaning effect. And the cleaning method uses the cleaning gas. A mixed gas of a fluorocarbon gas represented by the general formula of CvHxFyOz, wherein v is an integer from 1 to 5, x is selected from 0 and an integer from 1 to 3, y is an integer from 1 to 12, and z is selected from 0 and 1 and oxygen gas, to which is added at least one selected from the group of nitrogen trifluoride, fluorine, nitrous oxide, nitrogen, and rare gases up to 10% by volume based on the total gas volume.

    摘要翻译： 清洁气体提高了包括碳氟化合物气体在内的清洁气体的蚀刻反应速率，并提高了清洗效果。 并且清洁方法使用清洁气体。 由通式CvHxFyOz表示的碳氟化合物气体的混合气体，其中v是1至5的整数，x选自0和1至3的整数，y是1至12的整数，z是 选自0和1和氧气，基于总气体体积，向其中加入至少一种选自三氟化氮，氟，一氧化二氮，氮气和稀有气体的至少一种体积，至多10体积％。