公开(公告)号：US07238595B2

公开(公告)日：2007-07-03

申请号：US10800390

申请日：2004-03-12

申请人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

发明人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02661

摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

摘要翻译： 用于沉积诸如外延Ge和SiGe膜的外延膜的方法。 在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。 导致平滑，薄，相对缺陷的Ge或SiGe层。 还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

公开(公告)号：US20100089314A1

公开(公告)日：2010-04-15

申请号：US12641712

申请日：2009-12-18

申请人： Matt G. Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory M. Bartlett ,  Joseph P. Italiano ,  Bob Haro

发明人： Matt G. Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory M. Bartlett ,  Joseph P. Italiano ,  Bob Haro

IPC分类号： B05C13/00

CPC分类号： H01L21/68735 ,  H01J37/32871 ,  H01L21/67028

摘要： A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).

摘要翻译： 衬底支撑系统包括具有在其顶表面和底表面之间延伸的多个通道的衬底保持器。 衬底保持器支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。 中空的支撑构件为衬底的下侧提供支撑，并且构造成将气体向上输送到衬底保持器的一个或多个通道中。 向上输送的气体流入基板和基板支架之间的间隙。 根据实施例，气体然后围绕衬底边缘向外和向上流动（以阻止反应物气体在衬底上方的背面沉积）或向下穿过衬底保持器的通道（如果有的话），其不会引回到中空支撑件 （通过从扩散的掺杂​​剂原子远离衬底背面来抑制自掺杂）。

公开(公告)号：US07648579B2

公开(公告)日：2010-01-19

申请号：US11057111

申请日：2005-02-11

申请人： Matt G. Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory M. Bartlett ,  Joseph P. Italiano ,  Bob Haro

发明人： Matt G. Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory M. Bartlett ,  Joseph P. Italiano ,  Bob Haro

IPC分类号： C23C16/458 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01L21/68735 ,  H01J37/32871 ,  H01L21/67028

摘要： A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).

摘要翻译： 衬底支撑系统包括具有在其顶表面和底表面之间延伸的多个通道的衬底保持器。 衬底保持器支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。 中空的支撑构件为衬底的下侧提供支撑，并且构造成将气体向上输送到衬底保持器的一个或多个通道中。 向上输送的气体流入基板和基板支架之间的间隙。 根据实施例，气体然后围绕衬底边缘向外和向上流动（以阻止反应物气体在衬底上方的背面沉积）或向下穿过衬底保持器的通道（如果有的话），其不会引回到中空支撑件 （通过从扩散的掺杂​​剂原子远离衬底背面来抑制自掺杂）。

公开(公告)号：US07402504B2

公开(公告)日：2008-07-22

申请号：US11506320

申请日：2006-08-18

申请人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

发明人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02661

摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

摘要翻译： 用于沉积诸如外延Ge和SiGe膜的外延膜的方法。 在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。 导致平滑，薄，相对缺陷的Ge或SiGe层。 还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

公开(公告)号：US08530340B2

公开(公告)日：2013-09-10

申请号：US12556377

申请日：2009-09-09

申请人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

发明人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262

摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

摘要翻译： 用于沉积诸如外延Ge和SiGe膜的外延膜的方法。 在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。 导致平滑，薄，相对缺陷的Ge或SiGe层。 还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

公开(公告)号：US07682947B2

公开(公告)日：2010-03-23

申请号：US11755528

申请日：2007-05-30

申请人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

发明人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262

摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

摘要翻译： 用于沉积诸如外延Ge和SiGe膜的外延膜的方法。 在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。 导致平滑，薄，相对缺陷的Ge或SiGe层。 还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

公开(公告)号：US20100006024A1

公开(公告)日：2010-01-14

申请号：US12556377

申请日：2009-09-09

申请人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

发明人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC分类号： C30B23/04

CPC分类号： C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262

摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

摘要翻译： 用于沉积诸如外延Ge和SiGe膜的外延膜的方法。 在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。 导致平滑，薄，相对缺陷的Ge或SiGe层。 还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

公开(公告)号：US07115521B2

公开(公告)日：2006-10-03

申请号：US10993024

申请日：2004-11-18

申请人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

发明人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02661

摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

公开(公告)号：US08088225B2

公开(公告)日：2012-01-03

申请号：US12641712

申请日：2009-12-18

申请人： Matt G. Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory M. Bartlett ,  Joseph P. Italiano ,  Bob Haro

发明人： Matt G. Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory M. Bartlett ,  Joseph P. Italiano ,  Bob Haro

IPC分类号： C23C16/458 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01L21/68735 ,  H01J37/32871 ,  H01L21/67028

摘要： A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).

摘要翻译： 衬底支撑系统包括具有在其顶表面和底表面之间延伸的多个通道的衬底保持器。 衬底保持器支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。 中空的支撑构件为衬底的下侧提供支撑，并且构造成将气体向上输送到衬底保持器的一个或多个通道中。 向上输送的气体流入基板和基板支架之间的间隙。 根据实施例，气体然后围绕衬底边缘向外和向上流动（以阻止反应物气体在衬底上方的背面沉积）或向下穿过衬底保持器的通道（如果有的话），其不会引回到中空支撑件 （通过从扩散的掺杂​​剂原子远离衬底背面来抑制自掺杂）。