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    Buffer layer for thin film structures
    11.
    发明授权
    Buffer layer for thin film structures 有权
    薄膜结构缓冲层

    公开(公告)号：US07736761B2

    公开(公告)日：2010-06-15

    申请号：US11591269

    申请日：2006-10-31

    申请人： Stephen R. Foltyn ,  Quanxi Jia ,  Paul N. Arendt ,  Haiyan Wang

    发明人： Stephen R. Foltyn ,  Quanxi Jia ,  Paul N. Arendt ,  Haiyan Wang

    IPC分类号： B32B9/00

    CPC分类号： H01L39/2461 ,  Y10S428/93

    摘要： A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

    摘要翻译： 提供了包括基底和钛酸锶和钌酸锶的混合物层的复合结构。 超导制品可以包括包含氧化镁的最外层，钛酸锶的缓冲层或钛酸锶和钌酸锶的混合物的复合结构和在缓冲层上的诸如YBCO的超导材料的顶层。

    Buffer layer for thin film structures
    12.
    发明授权
    Buffer layer for thin film structures 有权
    薄膜结构缓冲层

    公开(公告)号：US07129196B2

    公开(公告)日：2006-10-31

    申请号：US10624855

    申请日：2003-07-21

    申请人： Stephen R. Foltyn ,  Quanxi Jia ,  Paul N. Arendt ,  Haiyan Wang

    发明人： Stephen R. Foltyn ,  Quanxi Jia ,  Paul N. Arendt ,  Haiyan Wang

    IPC分类号： H01B12/00 ,  H01F6/00 ,  H01L39/00

    CPC分类号： H01L39/2461 ,  Y10S428/93

    摘要： A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

    摘要翻译： 提供了包括基底和钛酸锶和钌酸锶的混合物层的复合结构。 超导制品可以包括包含氧化镁的最外层，钛酸锶的缓冲层或钛酸锶和钌酸锶的混合物的复合结构和在缓冲层上的诸如YBCO的超导材料的顶层。

    Chemical Solution Deposition Method of Fabricating Highly Aligned MgO Templates
    14.
    发明申请
    Chemical Solution Deposition Method of Fabricating Highly Aligned MgO Templates 有权
    化学溶液沉积方法制备高度对齐的MgO模板

    公开(公告)号：US20090137401A1

    公开(公告)日：2009-05-28

    申请号：US12363035

    申请日：2009-01-30

    申请人： Mariappan Parans Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul N. Arendt ,  Liliana Stan ,  Stephen R. Foltyn

    发明人： Mariappan Parans Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul N. Arendt ,  Liliana Stan ,  Stephen R. Foltyn

    IPC分类号： H01L39/24 ,  B05D3/00 ,  B05D3/02

    CPC分类号： H01L39/2461 ,  Y10S428/93 ,  Y10S505/74 ,  Y10T428/31678

    摘要： A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

    摘要翻译： 超导制品包括具有未结合的金属表面的基材; La2Zr2O7或Gd2Zr2O7的非结构化阻挡层由衬底表面支撑并与衬底的表面相接触; 由所述非纹理化阻挡层支撑的双轴纹理缓冲层; 以及由双轴纹理缓冲层支撑的双轴织构化超导层。 此外，在金属基板上形成缓冲层的方法包括以下步骤：提供具有非纹理金属表面的基板; 用阻挡层前体涂覆基材的表面; 将前体转化为无纹理的阻挡层; 并且在非纹理化阻挡层上方并且支撑着双轴织构化的缓冲层。

    Architecture for coated conductors
    15.
    发明授权
    Architecture for coated conductors 有权
    涂层导体的结构

    公开(公告)号：US07727934B2

    公开(公告)日：2010-06-01

    申请号：US11021171

    申请日：2004-12-23

    申请人： Stephen R. Foltyn ,  Paul N. Arendt ,  Haiyan Wang ,  Liliana Stan

    发明人： Stephen R. Foltyn ,  Paul N. Arendt ,  Haiyan Wang ,  Liliana Stan

    IPC分类号： H01B12/00 ,  H01L39/00 ,  B32B9/00

    CPC分类号： H01L39/2461 ,  C30B29/22

    摘要： Articles are provided including a base substrate having a layer of an oriented cubic oxide material with a rock-salt-like structure layer thereon, and, a layer of epitaxial titanium nitride upon the layer of an oriented cubic oxide material having a rock-salt-like structure. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of epitaxial titanium nitride or upon a intermediate buffer layer upon the layer of epitaxial titanium nitride.

    摘要翻译： 提供了一种制品，其包括具有层上的岩盐类结构层的定向立方氧化物材料层的基底基材和在具有岩盐盐结构层的定向立方氧化物材料层上的外延氮化钛层， 像结构。 这样的制品还可以包括在外延氮化钛层上的高温超导氧化物如YBCO的薄膜或在外延氮化钛层上的中间缓冲层上。

    High current density electropolishing in the preparation of highly smooth substrate tapes for coated conductors
    16.
    发明授权
    High current density electropolishing in the preparation of highly smooth substrate tapes for coated conductors 有权
    高电流密度电解抛光制备用于涂层导体的高度光滑的基材带

    公开(公告)号：US07510641B2

    公开(公告)日：2009-03-31

    申请号：US10624350

    申请日：2003-07-21

    申请人： Sascha Kreiskott ,  Vladimir Matias ,  Paul N. Arendt ,  Stephen R. Foltyn ,  Lawrence E. Bronisz

    发明人： Sascha Kreiskott ,  Vladimir Matias ,  Paul N. Arendt ,  Stephen R. Foltyn ,  Lawrence E. Bronisz

    IPC分类号： C25F3/16

    CPC分类号： C25F3/16 ,  C25F3/22 ,  H01L39/2454

    摘要： A continuous process of forming a highly smooth surface on a metallic tape by passing a metallic tape having an initial roughness through an acid bath contained within a polishing section of an electropolishing unit over a pre-selected period of time, and, passing a mean surface current density of at least 0.18 amperes per square centimeter through the metallic tape during the period of time the metallic tape is in the acid bath whereby the roughness of the metallic tape is reduced. Such a highly smooth metallic tape can serve as a base substrate in subsequent formation of a superconductive coated conductor.

    摘要翻译： 一种在金属带上形成高度光滑表面的连续方法，该方法是在预选择的时间段内使具有初始粗糙度的金属带通过电抛光单元的抛光部分内的酸浴进行通过， 在金属带处于酸浴期间通过金属带的电流密度为至少0.18安培/平方厘米，由此金属带的粗糙度减小。 这种高度光滑的金属带可以用作随后形成超导涂层导体的基底。

    Chemical solution deposition method of fabricating highly aligned MgO templates
    17.
    发明授权
    Chemical solution deposition method of fabricating highly aligned MgO templates 有权
    制备高度排列的MgO模板的化学溶液沉积方法

    公开(公告)号：US07553799B2

    公开(公告)日：2009-06-30

    申请号：US11143369

    申请日：2005-06-02

    申请人： Mariappan Parans Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul N. Arendt ,  Liliana Stan ,  Stephen R. Foltyn

    发明人： Mariappan Parans Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul N. Arendt ,  Liliana Stan ,  Stephen R. Foltyn

    IPC分类号： H01B12/00 ,  H01F6/00 ,  H01L39/00

    CPC分类号： H01L39/2461 ,  Y10S428/93 ,  Y10S505/74 ,  Y10T428/31678

    摘要： A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

    摘要翻译： 超导制品包括具有未结合的金属表面的基材; La2Zr2O7或Gd2Zr2O7的非结构化阻挡层由衬底表面支撑并与衬底的表面相接触; 由所述非纹理化阻挡层支撑的双轴纹理缓冲层; 以及由双轴纹理缓冲层支撑的双轴织构化超导层。 此外，在金属基板上形成缓冲层的方法包括以下步骤：提供具有非纹理金属表面的基板; 用阻挡层前体涂覆基材的表面; 将前体转化为无纹理的阻挡层; 并且在非纹理化阻挡层上方并且支撑着双轴织构化的缓冲层。

    Coated conductors
    19.
    发明授权
    Coated conductors 有权
    涂层导体

    公开(公告)号：US07737085B2

    公开(公告)日：2010-06-15

    申请号：US11486731

    申请日：2006-07-13

    申请人： Paul N. Arendt ,  Stephen R. Foltyn ,  Liliana Stan ,  Igor O. Usov ,  Haiyan Wang

    发明人： Paul N. Arendt ,  Stephen R. Foltyn ,  Liliana Stan ,  Igor O. Usov ,  Haiyan Wang

    IPC分类号： H01B12/00 ,  H01L39/00 ,  B32B19/00

    CPC分类号： H01L39/2461

    摘要： Articles are provided including a base substrate having a layer of an IBAD oriented material thereon, and, a layer of barium-containing material selected from the group consisting of barium zirconate, barium hafnate, barium titanate, barium strontium titanate, barium dysprosium zirconate, barium neodymium zirconate and barium samarium zirconate, or a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the layer of an IBAD oriented material. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of barium-containing material selected from the group consisting of barium zirconate, barium hafnate, barium titanate, barium strontium titanate, barium dysprosium zirconate, barium neodymium zirconate and barium samarium zirconate, or a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates.

    摘要翻译： 提供了包括其上具有IBAD取向材料层的基底基材和选自锆酸钡，铪酸钡，钛酸钡，钛酸钡钡，锆酸镝钡，钡钡锶钡的钡基材料层 钕锆酸镧和锆酸钡，或选自稀土锆酸盐和稀土铪的立方体金属氧化物材料在IBAD取向材料层上。 这样的制品还可以包括选自锆酸钡，铪酸钡，钛酸钡，钛酸锶钡，锆酸镧锆，锆酸钕锆酸钡等的含钡材料层的高温超导氧化物如YBCO的薄膜，以及 钡锆酸钡或选自稀土锆酸盐和稀土铪矿的立方金属氧化物材料。

    Wide band gap semiconductor templates
    20.
    发明授权
    Wide band gap semiconductor templates 失效
    宽带隙半导体模板

    公开(公告)号：US07851412B2

    公开(公告)日：2010-12-14

    申请号：US11707611

    申请日：2007-02-15

    申请人： Paul N. Arendt ,  Liliana Stan ,  Quanxi Jia ,  Raymond F. DePaula ,  Igor O. Usov

    发明人： Paul N. Arendt ,  Liliana Stan ,  Quanxi Jia ,  Raymond F. DePaula ,  Igor O. Usov

    IPC分类号： H01L39/24 ,  H01B1/00 ,  H01B1/02 ,  B32B9/00

    CPC分类号： C30B29/16 ,  C30B23/02 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554

    摘要： The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

    摘要翻译： 本发明涉及一种基于在立方（001）MgO封端表面上的外延（111）取向的稀土 - ⅣB族氧化物和可修正的离子束辅助沉积（“IBAD”）技术的薄膜结构 被六角晶体结构的半导体覆盖。 结合某些模板材料的IBAD氧化镁（“MgO”）技术用于制造所需的薄膜阵列。 类似地，具有适当模板层的IBAD MgO可用于具有立方晶体结构的半导体。