摘要:
A memory system and method is disclosed. In one embodiment, the memory system includes a memory controller and at least one memory module on which a certain number of semiconductor memory chips and connecting lines are arranged in a respectively specified topology. The connecting lines include first connecting lines forming transfer channels for a protocol based transfer of data and command signal streams from the memory controller to at least one of the memory chips on the memory module and from there to the memory controller, respectively. Second connecting lines are routed separately from the memory controller directly to at least one of the memory chips on the memory module for transferring select information to the at least one memory chip separately from the data and command signal streams.
摘要:
A synchronization and data recovery device (SuD) for clock-synchronized recovery of data bits in a data stream is provided, which is particularly suitable for improved backward identification of data in serial receiver interfaces of high-speed semiconductor memory modules and/or memory controller modules with a low data density. The SuD includes a sampling unit, a data adjustment unit, a digital monitoring unit, a phase lock detector unit, a phase generator, an FIR low-pass filter and a data recovery decision unit. After synchronization of the values that have been sampled by the sampling unit in the data adjustment unit, these values are filtered in the FIR low-pass filter unit, which indicates a greater tolerance with respect to fluctuations in the ideal sampling time, in that it uses sample values of the previous symbol and of the subsequent symbol in addition to the sample values of the symbol to be identified.
摘要:
A semiconductor memory system for the transfer of write and read data signals among interface circuits includes at least one memory device, a memory controller unit and, optionally, a register unit of a semiconductor memory system, wherein the data signals are each transferred in signal bursts of a specific burst length. The system is characterized in that a number of additional bits extending the burst length are transferred together with at least every nth signal burst.
摘要:
A memory device including a memory cell array; an input circuit providing drive signals to the memory cell array dependent on externally received command data; an output buffer buffering data read out from the memory cell array; and a timer driving the output buffer such that the buffered data are provided at an output after an adjustable time interval has elapsed, the adjustable time interval beginning with the provision of the drive signals.
摘要:
In a semiconductor memory system, the memory chips are linked to a memory module in a shared loop forward architecture and connected in a point-to-point connection to a memory controller. Each memory chip includes a high-speed interface circuit including: a read and write data/command-and-address signal re-driver/transmitter path for re-driving serial read data and write data/command-and-address signals not destined for the semiconductor memory chip; and a main signal path which includes a serial-to-parallel converter and a synchronizer for serial-to-parallel converting and synchronizing with a reference clock signal write data/command-and-address signals destined for the semiconductor memory chip as well as a parallel-to-serial converter for parallel-to-serial converting read data signals read from a memory core of the memory chips, and a switch for inserting the parallel-to-serial converted read data signals into the re-driver/transmitter path. Optionally the high-speed interface circuit additionally includes a transparent re-driver/transmitter path not including any synchronizing circuitry.
摘要:
A method processes data in a memory arrangement. The method includes receiving and transmitting the data from the memory arrangement in the form of data packets according to a predefined protocol. The method includes distributing each received data packet to at least two separate data packet processing units. Each data packet processing unit is coupled to a portion of memory cells of the memory arrangement. The method includes processing, at each data packet processing unit, parts of the received data packets that relate to the portion of the memory cells the data packet processing unit is coupled to. The method includes generating a data packet to be transmitted including setting up, with each data packet processing unit, a part of the data packet to be transmitted.
摘要:
A memory system and method is discussed. The memory system includes a memory controller and at least one memory module on which a certain number of semiconductor memory chips and connecting lines are arranged in a respectively specified topology. The connecting lines include first connecting lines forming transfer channels for a protocol based transfer of data and command signal streams from the memory controller to at least one of the memory chips on the memory module and from there to the memory controller, respectively. Second connecting lines are routed separately from the memory controller directly to at least one of the memory chips on the memory module for transferring select information to the at least one memory chip separately from the data and command signal streams.
摘要:
In a semiconductor memory system, the memory chips are linked to a memory module in a shared loop forward architecture and connected in a point-to-point connection to a memory controller. Each memory chip includes a high-speed interface circuit including: a read and write data/command-and-address signal re-driver/transmitter path for re-driving serial read data and write data/command-and-address signals not destined for the semiconductor memory chip; and a main signal path which includes a serial-to-parallel converter and a synchronizer for serial-to-parallel converting and synchronizing with a reference clock signal write data/command-and-address signals destined for the semiconductor memory chip as well as a parallel-to-serial converter for parallel-to-serial converting read data signals read from a memory core of the memory chips, and a switch for inserting the parallel-to-serial converted read data signals into the re-driver/transmitter path. Optionally the high-speed interface circuit additionally includes a transparent re-driver/transmitter path not including any synchronizing circuitry.
摘要:
A synchronous signal generator is provided that contains a first and second counting and delay circuit, which both are in a subhierarchical position with respect to a reset signal synchronization/delay circuit. The reset signal synchronization/delay circuit and the first and second counting and delay circuit are triggered by a basic clock signal or a first clock signal derived therefrom to be identical in frequency and phase, and contain counting means whose initial and final counting state are adjustable in order to set, in a clocked fashion, the temporal positions of a first and second load signal that are output by the first counting and delay circuit as well as of a FIFO read clock signal that is output by the second counting and delay circuit and thus adapt them to the temporal requirements of a semiconductor memory system containing the synchronous signal generator.
摘要:
A memory device comprising a memory cell array; an input circuit for receiving command data and providing drive signals to the memory cell array; an output buffer for buffering data read out from the memory cell array; and a timer for driving the output buffer such that the buffered data are provided at an output after a predetermined time interval has elapsed, the predetermined time interval beginning with the provision of the drive signals.