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    Fabrication of on-package and on-chip structure using build-up layer process
    11.
    发明授权
    Fabrication of on-package and on-chip structure using build-up layer process 有权
    使用堆积层工艺制造封装和片上结构

    公开(公告)号：US06890829B2

    公开(公告)日：2005-05-10

    申请号：US10246360

    申请日：2002-09-17

    Applicant: Peng Cheng ,  Qing Ma

    Inventor： Peng Cheng ,  Qing Ma

    IPC: H01L23/522 ,  H01L27/08 ,  H01L21/20

    CPC classification number: H01L23/5227 ,  H01L24/19 ,  H01L27/08 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/00

    Abstract: The invention relates to a process of forming an on-chip package inductor. The process includes providing a substrate with at least one microelectronic device packaged therewith. As part of the inventive process, electrical communication is formed for the microelectronic device. The electrical communication includes at least two electrically conductive layers. As part of the inventive technology, the inductor is patterned on the substrate before, during, or after formation of the electrical communication. The inductor is connected to the at least one microelectronic device.

    Abstract translation: 本发明涉及一种形成片上封装电感器的工艺。 该方法包括提供具有与其一起封装的至少一个微电子器件的衬底。 作为本发明方法的一部分，为微电子器件形成电通信。 电通信包括至少两个导电层。 作为本发明技术的一部分，电感器在形成电通信之前，期间或之后在衬底上图案化。 电感器连接到至少一个微电子器件。

    MEMS device integrated chip package, and method of making same
    13.
    发明授权
    MEMS device integrated chip package, and method of making same 有权
    MEMS器件集成芯片封装及其制造方法

    公开(公告)号：US06621137B1

    公开(公告)日：2003-09-16

    申请号：US09687907

    申请日：2000-10-12

    Applicant: Qing Ma ,  Peng Cheng ,  Valluri Rao

    Inventor： Qing Ma ,  Peng Cheng ,  Valluri Rao

    IPC: H01L2900

    CPC classification number: B81C1/00333 ,  H01G5/16 ,  H01G5/40 ,  H01L2224/48091 ,  Y10T428/24248 ,  H01L2924/00014

    Abstract: The present invention relates to a chip package that includes a semiconductor device and at least one micro electromechanical structure (MEMS) such that the semiconductor device and the MEMS form an integrated package. One embodiment of the present invention includes a semiconductor device, a first MEMS device disposed in a conveyance such as a film, and a second MEMS device disposed upon the semiconductor device through a via in the conveyance. The present invention also relates to a process of forming a chip package that includes providing a conveyance such as a tape automated bonding (TAB) structure that may bold at least one MEMS device. The method is further carried out by disposing the conveyance over the active surface of the device in a manner that causes the at least one MEMS to communicate electrically to the active surface. Where appropriate, a sealing structure such as a solder ring may be used to protect the MEMS.

    Abstract translation: 本发明涉及包括半导体器件和至少一个微机电结构（MEMS）的芯片封装，使得半导体器件和MEMS形成集成封装。 本发明的一个实施例包括半导体器件，设置在诸如膜的输送器中的第一MEMS器件，以及通过输送中的通孔设置在半导体器件上的第二MEMS器件。 本发明还涉及一种形成芯片封装的方法，其包括提供输送，例如可以使至少一个MEMS器件粗化的带自动键合（TAB）结构。 该方法进一步通过以使得至少一个MEMS与活性表面电连通的方式布置在器件的有效表面上的输送来进行。 在适当的情况下，可以使用诸如焊环的密封结构来保护MEMS。

    Resonator frequency correction by modifying support structures
    15.
    发明授权
    Resonator frequency correction by modifying support structures 有权
    谐振器频率校正通过修改支持结构

    公开(公告)号：US06570468B2

    公开(公告)日：2003-05-27

    申请号：US09895360

    申请日：2001-06-29

    Applicant: Qing Ma ,  Peng Cheng ,  Valluri R. Rao

    Inventor： Qing Ma ,  Peng Cheng ,  Valluri R. Rao

    IPC: H03H905

    CPC classification number: H03H3/0077 ,  H03H9/2463 ,  Y10S977/70 ,  Y10S977/721 ,  Y10S977/733 ,  Y10S977/888 ,  Y10S977/889

    Abstract: A method including to a resonator coupled to at least one support structure on a substrate, the resonator having a resonating frequency in response to a frequency stimulus, modifying the resonating frequency by modifying the at least one support structure. A method including forming a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. A method including applying a frequency stimulus to a resonator coupled to at least one support structure on a chip-level substrate determining a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. An apparatus including a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency tuned by the modification of the at least one support structure to a selected frequency stimulus.

    Abstract translation: 一种方法，包括耦合到衬底上的至少一个支撑结构的谐振器，所述谐振器响应于频率刺激具有谐振频率，通过修改所述至少一个支撑结构来修改谐振频率。 一种方法，包括形成耦合到芯片级衬底上的至少一个支撑结构的谐振器，所述谐振器具有谐振频率; 以及通过修改所述至少一个支撑结构来修改谐振器的谐振频率。 一种方法，包括对耦合到芯片级衬底上的至少一个支撑结构的谐振器施加频率刺激，确定谐振频率; 以及通过修改所述至少一个支撑结构来修改谐振器的谐振频率。 一种包括耦合到芯片级衬底上的至少一个支撑结构的谐振器的谐振器，所述谐振器具有通过所述至少一个支撑结构的修改调谐到所选择的频率刺激的谐振频率。

    Sacrificial layer technique to make gaps in MEMS applications
    16.
    发明授权
    Sacrificial layer technique to make gaps in MEMS applications 有权

    公开(公告)号：US07005314B2

    公开(公告)日：2006-02-28

    申请号：US09894334

    申请日：2001-06-27

    Applicant: Qing Ma ,  Peng Cheng

    Inventor： Qing Ma ,  Peng Cheng

    IPC: H01L21/00

    CPC classification number: B81C1/00126 ,  B81C2201/0109 ,  H03H3/0072

    Abstract: A method comprising over an area of a substrate, forming a plurality of three dimensional first structures; following forming the first structures, conformally introducing a sacrificial material over the area of the substrate; introducing a second structural material over the sacrificial material; and removing the sacrificial material. An apparatus comprising a first structure on a substrate; and a second structure on the substrate and separated from the first structure by an unfilled gap defined by the thickness of a removed film.

    Resonator frequency correction by modifying support structures
    17.
    发明授权
    Resonator frequency correction by modifying support structures 失效

    公开(公告)号：US06650204B2

    公开(公告)日：2003-11-18

    申请号：US10307053

    申请日：2002-11-27

    Applicant: Qing Ma ,  Peng Cheng ,  Valluri Rao

    Inventor： Qing Ma ,  Peng Cheng ,  Valluri Rao

    IPC: H03H924

    CPC classification number: H03H3/0077 ,  H03H9/2463 ,  Y10S977/70 ,  Y10S977/721 ,  Y10S977/733 ,  Y10S977/888 ,  Y10S977/889

    Abstract: A method including to a resonator coupled to at least one support structure on a substrate, the resonator having a resonating frequency in response to a frequency stimulus, modifying the resonating frequency by modifying the at least one support structure. A method including forming a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. A method including applying a frequency stimulus to a resonator coupled to at least one support structure on a chip-level substrate determining a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. An apparatus including a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency tuned by the modification of the at least one support structure to a selected frequency stimulus.

    Tunable inductor using microelectromechanical switches
    18.
    发明授权
    Tunable inductor using microelectromechanical switches 有权
    可调电感采用微机电开关

    公开(公告)号：US06573822B2

    公开(公告)日：2003-06-03

    申请号：US09884738

    申请日：2001-06-18

    Applicant: Qing Ma ,  Peng Cheng ,  Valluri Rao

    Inventor： Qing Ma ,  Peng Cheng ,  Valluri Rao

    IPC: H01F500

    CPC classification number: H01F5/003 ,  H01F17/0006 ,  H01F21/12 ,  H01H59/0009 ,  H01L24/19 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00

    Abstract: A tunable inductor is disclosed. The tunable inductor comprises a helical or spiral inductor formed on a semiconductor substrate having an input and an output. The helical inductor has a full length that provides a full inductance. Also, a full inductance switch is disposed between the output and the full length of the helical inductor. Finally, at least one microelectromechanical (MEMS) switch is disposed between the output and an intermediate location of the helical inductor.

    Abstract translation: 公开了一种可调电感器。 可调电感器包括形成在具有输入和输出的半导体衬底上的螺旋或螺旋形电感器。 螺旋电感器具有提供全电感的全长。 此外，全电感开关设置在螺旋电感器的输出端和全长之间。 最后，至少一个微机电（MEMS）开关设置在螺旋电感器的输出端和中间位置之间。

    Micro-electromechanical structure resonator, method of making, and method of using
    19.
    发明授权
    Micro-electromechanical structure resonator, method of making, and method of using 失效
    微机电结构谐振器，制造方法和使用方法

    公开(公告)号：US06479921B2

    公开(公告)日：2002-11-12

    申请号：US10046128

    申请日：2002-01-09

    Applicant: Qing Ma ,  Peng Cheng

    Inventor： Qing Ma ,  Peng Cheng

    IPC: H02N100

    CPC classification number: H03H3/0077 ,  B81B3/007 ,  G11B5/484 ,  G11B21/16 ,  H03H9/24 ,  H03H9/2463 ,  H03H2009/0233

    Abstract: The invention relates to a hollow microbeam that is fabricated upon a base or pedestal. Processing of the hollow microbeam includes forming at least one hollow channel in the microbeam by removing temporary fillers after formation of the microbeam. The inventive microbeam may provide at least an order of magnitude increase in oscillational frequency over a solid microbeam.

    Abstract translation: 本发明涉及一种制造在基座或基座上的中空微波束。 中空微束的加工包括通过在形成微束之后去除临时填料而在微束中形成至少一个中空通道。 本发明的微束可以在固体微束上提供振荡频率至少一个数量级的增加。

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