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11.发明申请公开(公告)号：US20130211251A1
公开(公告)日：2013-08-15
申请号：US13821400
申请日：2011-10-13
Applicant: Pengdi Han , Jian Tian , Kevin Meneou , Brandon Stone
Inventor： Pengdi Han , Jian Tian , Kevin Meneou , Brandon Stone
CPC classification number: H01L41/183 , A61B8/00 , A61B8/4483 , C01G33/006 , C01P2002/50 , C01P2004/03 , C04B35/491 , C04B35/495 , C04B35/499 , C04B2235/3206 , C04B2235/3215 , C04B2235/3224 , C04B2235/3234 , C04B2235/3236 , C04B2235/3249 , C04B2235/3255 , C04B2235/3286 , C04B2235/3296 , C04B2235/3298 , C04B2235/76 , C04B2235/768 , C04B2235/96 , C30B29/30 , C30B29/32 , G03H3/00 , H01L41/18 , H01L41/1875 , H01L41/1876 , H01L41/332 , H01L41/338 , H03H9/02015 , Y10T29/42
Abstract: The present invention generally relates to high frequency piezoelectric crystal composites, devices, and method for manufacturing the same. In adaptive embodiments an improved imaging device, particularly a medical imaging device or a distance imaging device, for high frequency (>20 MHz) applications involving an imaging transducer assembly is coupled to a signal imagery processor. Additionally, the proposed invention presents a system for photolithography based micro-machined piezoelectric crystal composites and their uses resulting in improved performance parameters.
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公开(公告)号：US07908722B2
公开(公告)日：2011-03-22
申请号：US12252037
申请日：2008-10-15
Applicant: Pengdi Han
Inventor： Pengdi Han
CPC classification number: A61B8/4494 , G01C19/5607 , H01L41/0906 , H01L41/0986 , H01L41/0993 , H01L41/1132 , H01L41/18 , H01L41/183 , H01L41/1875 , H01L41/1876 , H01L41/257 , H01L41/29 , H01L41/338 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
Abstract: A process for the preparation of piezoelectric single crystal elements involving the steps of mechanically finishing of a single crystal element with cuttings such as zxt±45°, coating electrodes on a pair of Z surfaces, poling the single crystal in a direction along the axis under a 500V/mm electric field.
Abstract translation: 一种用于制备压电单晶元件的方法，包括以下步骤：用zxt±45°的切割机械精加工单晶元件，在一对Z表面上涂覆电极，沿着<011的方向极化单晶 > 500V / mm电场。
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13.发明授权公开(公告)号：US10082687B2
公开(公告)日：2018-09-25
申请号：US15487478
申请日：2017-04-14
Applicant: Pengdi Han
Inventor： Pengdi Han , Weiling Yan
CPC classification number: G02F1/055 , B29D11/00932 , G02F1/0027 , G02F1/0136 , G02F1/05 , G02F1/21 , G02F1/3558 , G02F2001/212
Abstract: The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof more specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient γc, e.g., transverse effective linear E-O coefficient γTc, more than 1100 pm/V and longitudinal effective linear E-O coefficient γlc up to 527 pm/V, which results in a very low half-wavelength voltage Vlπ below 200V and VTπ below about 87V in a wide number of modulation, communication, laser, and industrial uses.
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Patent Agency Ranking
14.发明授权公开(公告)号：US09280006B2
公开(公告)日：2016-03-08
申请号：US14390522
申请日：2013-04-04
Applicant: PENGDI HAN
Inventor： Pengdi Han , Welling Yan
CPC classification number: G02F1/055 , B29D11/00932 , G02F1/0027 , G02F1/0136 , G02F1/05 , G02F1/21 , G02F1/3558 , G02F2001/212
Abstract: The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof. More specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient yc, e.g., transverse effective linear E-O coefficient yTc more than 1100 pm/V and longitudinal effective linear E-O coefficient ytc up to 527 pm/V, which results in a very low half-wavelength voltage Vtx below 200V and Vtx below about 87V in a wide number of modulation, communication, laser, and industrial uses.
Abstract translation: 本发明涉及电光（E-O）晶体元件，其应用及其制备方法。 更具体地，本发明涉及显示超高线性EO系数yc的EO晶体元件（其可以由掺杂或未掺杂的PMN-PT，PIN-PMN-PT或PZN-PT铁电晶体制成），例如， 横向有效线性EO系数yTc大于1100 pm / V，纵向有效线性EO系数ytc高达527 pm / V，这导致非常低的半波长电压Vtx低于200V，Vtx低于约87V，在广泛的调制 通信，激光和工业用途。
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公开(公告)号：US09219223B2
公开(公告)日：2015-12-22
申请号：US13025751
申请日：2011-02-11
Applicant: Pengdi Han
Inventor： Pengdi Han
IPC: H01L41/09 , H01L41/16 , H01L41/187 , H01L41/29 , H01L41/257 , H01L41/338 , G01C19/5607
CPC classification number: A61B8/4494 , G01C19/5607 , H01L41/0906 , H01L41/0986 , H01L41/0993 , H01L41/1132 , H01L41/18 , H01L41/183 , H01L41/1875 , H01L41/1876 , H01L41/257 , H01L41/29 , H01L41/338 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
Abstract: Preparations of piezoelectric single crystal elements involving the steps of mechanically finishing a single crystal element with select cuttings, coating electrodes on a pair of Z surfaces, poling the single crystal along the axis under a 500V/mm electric field and a product made by the process thereof.
Abstract translation: 包括以下步骤的压电单晶元件的制备，所述步骤包括用选择的切屑机械精加工单晶元件，在一对Z表面上涂覆电极，在500V / mm电场下沿着<011>轴倾斜单晶，制成产品 通过其过程。
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16.发明授权公开(公告)号：US08559273B2
公开(公告)日：2013-10-15
申请号：US13821425
申请日：2011-10-13
Applicant: Pengdi Han , Jian Tian , Kevin Meneou , Brandon Stone
Inventor： Pengdi Han , Jian Tian , Kevin Meneou , Brandon Stone
CPC classification number: H01L41/183 , A61B8/00 , A61B8/4483 , C01G33/006 , C01P2002/50 , C01P2004/03 , C04B35/491 , C04B35/495 , C04B35/499 , C04B2235/3206 , C04B2235/3215 , C04B2235/3224 , C04B2235/3234 , C04B2235/3236 , C04B2235/3249 , C04B2235/3255 , C04B2235/3286 , C04B2235/3296 , C04B2235/3298 , C04B2235/76 , C04B2235/768 , C04B2235/96 , C30B29/30 , C30B29/32 , G03H3/00 , H01L41/18 , H01L41/1875 , H01L41/1876 , H01L41/332 , H01L41/338 , H03H9/02015 , Y10T29/42
Abstract: The present invention generally relates to high frequency piezoelectric crystal composites, devices, and method for manufacturing the same. In adaptive embodiments an improved imaging device, particularly a medical imaging device or a distance imaging device, for high frequency (>20 MHz) applications involving an imaging transducer assembly is coupled to a signal imagery processor. Additionally, the proposed invention presents a system for photolithography based micro-machined piezoelectric crystal composites and their uses resulting in improved performance parameters.
Abstract translation: 本发明一般涉及高频压电晶体复合材料，器件及其制造方法。 在自适应实施例中，用于涉及成像换能器组件的高频（> 20MHz）应用的改进的成像装置，特别是医学成像装置或距离成像装置被耦合到信号图像处理器。 另外，所提出的发明提出了一种用于基于光刻的微加工压电晶体复合材料的系统及其用途，从而提高了性能参数。
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17.发明申请HIGH FREQUENCY PIEZOELECTRIC CRYSTAL COMPOSITES, DEVICES, AND METHODS FOR MANUFACTURING THE SAME 有权高频压电晶体复合材料，其制造方法及其制造方法公开(公告)号：US20130223185A1
公开(公告)日：2013-08-29
申请号：US13821425
申请日：2011-10-13
Applicant: Pengdi Han , Jian Tian , Kevin Meneou , Brandon Stone
Inventor： Pengdi Han , Jian Tian , Kevin Meneou , Brandon Stone
IPC: G03H3/00
CPC classification number: H01L41/183 , A61B8/00 , A61B8/4483 , C01G33/006 , C01P2002/50 , C01P2004/03 , C04B35/491 , C04B35/495 , C04B35/499 , C04B2235/3206 , C04B2235/3215 , C04B2235/3224 , C04B2235/3234 , C04B2235/3236 , C04B2235/3249 , C04B2235/3255 , C04B2235/3286 , C04B2235/3296 , C04B2235/3298 , C04B2235/76 , C04B2235/768 , C04B2235/96 , C30B29/30 , C30B29/32 , G03H3/00 , H01L41/18 , H01L41/1875 , H01L41/1876 , H01L41/332 , H01L41/338 , H03H9/02015 , Y10T29/42
Abstract: The present invention generally relates to high frequency piezoelectric crystal composites, devices, and method for manufacturing the same. In adaptive embodiments an improved imaging device, particularly a medical imaging device or a distance imaging device, for high frequency (>20 MHz) applications involving an imaging transducer assembly is coupled to a signal imagery processor. Additionally, the proposed invention presents a system for photolithography based micro-machined piezoelectric crystal composites and their uses resulting in improved performance parameters.
Abstract translation: 本发明一般涉及高频压电晶体复合材料，器件及其制造方法。 在自适应实施例中，用于涉及成像换能器组件的高频（> 20MHz）应用的改进的成像装置，特别是医学成像装置或距离成像装置被耦合到信号图像处理器。 另外，所提出的发明提出了一种用于基于光刻的微加工压电晶体复合材料的系统及其用途，从而提高了性能参数。
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18.发明授权Hybrid stockbarger zone-leveling melting method for directed crystallization and growth of single crystals of lead magnesium niobate-lead titanate (PMN-PT) solid solutions and related piezocrystals 有权铅锌铌酸铅钛酸铅（PMN-PT）固溶体和相关压晶体的单晶的定向结晶和生长的混合蓄电池平整熔化方法公开(公告)号：US06942730B2
公开(公告)日：2005-09-13
申请号：US10288042
申请日：2002-11-04
Applicant: Pengdi Han
Inventor： Pengdi Han
CPC classification number: C30B11/00 , C30B29/30 , C30B29/32 , Y10T117/1076 , Y10T117/1084 , Y10T117/1088 , Y10T117/1092
Abstract: This invention provides a hybrid Stockbarger zone-leveling melting method for seeded crystallization and the manufacture of homogenous large-sized crystals of lead magnesium niobate-lead titanate (PMN-PT) based solid solutions and related piezocrystals. The invention provides three temperature zones resulting in increased compositional homogeneity and speed of crystal growth, in a cost effective multi-crucible configuration.
Abstract translation: 本发明提供了一种用于种子结晶的混合库存扩散器区域平整熔化方法，以及制造基于铌酸铅铌酸铅 - 钛酸铅（PMN-PT）的固溶体和相关压晶体的均匀大尺寸晶体。 本发明提供三个温度区域，其在成本有效的多坩埚构造中导致增加的组成均匀性和晶体生长速度。
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