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23 条记录 (耗时 0.039 秒)

    Metal-insulator varactor devices
    15.
    发明授权
    Metal-insulator varactor devices 有权
    金属绝缘子变容二极管装置

    公开(公告)号：US07388276B2

    公开(公告)日：2008-06-17

    申请号：US11176404

    申请日：2005-07-07

    申请人： Michael J. Estes

    发明人： Michael J. Estes

    IPC分类号： H01L29/93

    CPC分类号： H01L27/0811 ,  H01G7/06

    摘要： A varactor is configured with first and second conducting layers, spaced apart from one another such that a given voltage can be applied across the first and second conducting layers. Further, an insulator arrangement includes at least one insulator layer disposed between the first and second conducting layers, configured to cooperate with the first and second conducting layers to produce a charge pool which changes responsive to changes in the given voltage such that a device capacitance value between the first and second conducting layers changes responsive to the given voltage. The insulator arrangement can include one layer, two distinct layers or more than two distinct layers. One or more of the layers can be an amorphous material. A zero-bias voltage version of the varactor is also described.

    摘要翻译： 变容二极管被构造为具有彼此间隔开的第一和第二导电层，使得给定电压可跨越第一和第二导电层施加。 此外，绝缘体布置包括设置在第一和第二导电层之间的至少一个绝缘体层，其被配置为与第一和第二导电层配合以产生响应于给定电压的变化而变化的电荷池，使得器件电容值 在第一和第二导电层之间响应给定电压而改变。 绝缘体布置可以包括一个层，两个不同的层或多于两个不同的层。 一个或多个层可以是无定形材料。 还描述了变容二极管的零偏压电压版本。

    Thin-film transistors based on tunneling structures and applications
    16.
    发明授权
    Thin-film transistors based on tunneling structures and applications 失效
    基于隧道结构和应用的薄膜晶体管

    公开(公告)号：US07173275B2

    公开(公告)日：2007-02-06

    申请号：US11113587

    申请日：2005-04-25

    申请人： Michael J. Estes ,  Blake J. Eliasson

    发明人： Michael J. Estes ,  Blake J. Eliasson

    IPC分类号： H01L29/06

    CPC分类号： H01L29/7606 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L27/1446 ,  H01L29/7311 ,  H01L29/82 ,  H01L31/08 ,  H01L31/101 ,  H01L33/0004 ,  H01L33/0037 ,  H01L45/00

    摘要： A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at least a first amorphous insulating layer and a different, second insulating layer such that the transport of electrons includes transport by means of tunneling. The transistor further includes a second tunneling structure disposed between the base and collector electrodes. The second tunneling structure serves as a transport of at least a portion of the previously mentioned electrons between the base and collector electrodes by means of ballistic transport such that the portion of the electrons is collected at the collector electrode. An associated method for reducing electron reflection at interfaces in a thin-film transistor is also disclosed.

    摘要翻译： 热电子晶体管包括发射极，基极，集电极和第一隧道结构，其布置并用作发射极和基极之间的电子传输。 第一隧道结构包括至少第一非晶绝缘层和不同的第二绝缘层，使得电子的传输包括通过隧道传输。 晶体管还包括设置在基极和集电极之间的第二隧道结构。 第二隧道结构用作通过弹道传输使得电子部分在集电极处收集的基极和集电极之间的至少一部分前述电子的传输。 还公开了一种用于在薄膜晶体管的界面处减少电子反射的相关方法。

    Surface plasmon devices
    18.
    发明授权
    Surface plasmon devices 有权
    表面等离子体激元器件

    公开(公告)号：US07418179B2

    公开(公告)日：2008-08-26

    申请号：US11621649

    申请日：2007-01-10

    申请人： Michael J. Estes ,  Garret Moddel

    发明人： Michael J. Estes ,  Garret Moddel

    IPC分类号： G02B6/10

    CPC分类号： G02B6/12 ,  B82Y20/00 ,  G02B6/10 ,  G02B6/1226

    摘要： A device including an input port configured to receive an input signal is described. The device also includes an output port and a structure, which structure includes a tunneling junction connected with the input port and the output port. The tunneling junction is configured in a way (i) which provides electrons in a particular energy state within the structure, (ii) which produces surface plasmons in response to the input signal, (iii) which causes the structure to act as a waveguide for directing at least a portion of the surface plasmons along a predetermined path toward the output port such that the surface plasmons so directed interact with the electrons in a particular way, and (iv) which produces at the output port an output signal resulting from the particular interaction between the electrons and the surface plasmons.

    摘要翻译： 描述了包括被配置为接收输入信号的输入端口的装置。 该装置还包括输出端口和结构，该结构包括与输入端口和输出端口连接的隧道结。 以（i）的方式配置隧道结，（i）在结构内提供特定能量状态的电子，（ii）响应于输入信号产生表面等离子体激元，（iii）其导致该结构用作波导 将表面等离子体激元的至少一部分沿着预定路径引向输出端口，使得如此定向的表面等离子体激元以特定方式与电子相互作用，以及（iv）在输出端口处产生由特定的输出信号产生的输出信号 电子与表面等离子体相互作用。

    Temperature sensing transformer primary switch
    20.
    发明授权
    Temperature sensing transformer primary switch 失效
    温度感应变压器一次开关

    公开(公告)号：US4053938A

    公开(公告)日：1977-10-11

    申请号：US568655

    申请日：1975-04-16

    申请人： Michael J. Estes

    发明人： Michael J. Estes

    IPC分类号： H01H37/60 ,  H02H5/06 ,  H02H7/04

    CPC分类号： H01H37/60 ,  H02H5/06

    摘要： A temperature sensing transformer primary switch for a distribution transformer, the switch being mounted within the distribution transformer below the level of the dielectric fluid and being manually operable externally of the transformer for opening the primary circuit and deenergizing the transformer, the switch including a temperature sensing device mounted on the internal end of the transformer below the level of the dielectric fluid to open the primary switch in response to overload temperatures produced on the transformer's secondary circuit. The temperature sensing device includes a compression spring and a wax motor for releasing the energy stored in the compression spring as the temperature of the dielectric fluid reaches a predetermined maximum temperature. The spring is preloaded sufficiently by a manual operation to actuate the switch at the maximum temperature. A pressure responsive switch assembly is provided for opening the primary switch.

    摘要翻译： 一种用于配电变压器的温度感测变压器初级开关，该开关安装在配电变压器内，低于介质流体的水平面，并可在变压器的外部手动操作，用于打开主电路和断电变压器，开关包括温度感测 器件安装在变压器的内部端低于介质流体的水平面，以响应变压器二次回路产生的过载温度来打开主开关。 温度检测装置包括压缩弹簧和蜡马达，用于随着介电流体的温度达到预定的最高温度而释放存储在压缩弹簧中的能量。 通过手动操作来充分预充弹簧，以在最高温度下启动开关。 提供用于打开主开关的压力响应开关组件。