公开(公告)号：US20190074273A1

公开(公告)日：2019-03-07

申请号：US16033252

申请日：2018-07-12

Applicant: Renesas Electronics Corporation

Inventor： Wataru SUMIDA ,  Akihiro SHIMOMURA

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66 ,  H01L21/28 ,  H01L21/265 ,  H01M10/42 ,  H02J7/00

Abstract: A source electrode can be patterned well in response to the densification of a semiconductor device. A first MOS transistor element is formed in a first element region and a second MOS transistor element is formed in a second element region. A first source electrode is arranged so as to straddle a first gate electrode and cover a first source layer located on both one side and the other side in a gate length direction with the first gate electrode interposed. A second source electrode is arranged so as to straddle a second gate electrode and cover a second source layer located on both one side and the other side in the gate length direction with the second gate electrode interposed.

公开(公告)号：US20230118274A1

公开(公告)日：2023-04-20

申请号：US17887156

申请日：2022-08-12

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yuta NABUCHI ,  Katsumi EIKYU ,  Atsushi SAKAI ,  Akihiro SHIMOMURA ,  Satoru TOKUDA

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/78 ,  H01L21/265 ,  H01L29/66

Abstract: A semiconductor device includes a cell region in which a plurality of unit cells are formed, and an outer peripheral region surrounding the cell region in plan view. Each of the plurality of unit cells includes a semiconductor substrate having a drift region, a body region, a source region, a pair of first column regions, and a gate electrode formed in a trench with a gate insulating film interposed therebetween. A well region is formed on a surface of the drift region in the outer peripheral region. A second column region is formed in the drift region below the well region and extends in Y and X directions so as to surround the cell region. The well region is connected to the body region, and the second column region is connected to the well region.

公开(公告)号：US20220238651A1

公开(公告)日：2022-07-28

申请号：US17553251

申请日：2021-12-16

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yasutaka NAKASHIBA ,  Akihiro SHIMOMURA ,  Masami SAWADA

IPC: H01L29/08 ,  H01L29/78 ,  H01L23/495 ,  H01L23/00

Abstract: The semiconductor device according to one embodiment includes a semiconductor substrate having a first surface and a second surface on an opposite side of the first surface, a gate insulating film formed on the first surface, a gate formed on the first surface via the gate insulating film, a source region formed in the first surface side of the semiconductor substrate, a body region formed so as to be in contact with the source region and including a channel region, a drain region formed in the second surface side of the semiconductor substrate, and a drift region formed so as to be in contact with the second surface side of the body region and the first surface side of the drain region. The semiconductor substrate has at least one concave portion formed in the second surface and being recessed toward the first surface.

公开(公告)号：US20210104625A1

公开(公告)日：2021-04-08

申请号：US17000533

申请日：2020-08-24

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Machiko SATO ,  Akihiro SHIMOMURA

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/66

Abstract: A semiconductor device has an impurity region covering a bottom of a gate trench and a column region. A bottom of the column region is deeper than a bottom of the gate trench. The impurity region is arranged between the gate trench and the column region. This structure can improve the characteristics of the semiconductor device.