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    Semiconductor device
    11.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09048213B2

    公开(公告)日：2015-06-02

    申请号：US14325003

    申请日：2014-07-07

    Applicant: Renesas Electronics Corporation

    Inventor： Ryo Kanda ,  Tetsu Toda ,  Yasushi Nakahara ,  Yoshinori Kaya

    IPC: H01L29/78 ,  H01L29/40 ,  H01L29/10 ,  H01L29/06 ,  H01L27/02

    CPC classification number: H01L27/0207 ,  H01L21/761 ,  H01L29/0653 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835

    Abstract: A field plate electrode is repetitively disposed in a folded manner or a spiral shape in a direction along an edge of a first circuit region. A coupling transistor couples a first circuit to a second circuit lower in supply voltage than the first circuit. A second conductivity type region is disposed around the coupling transistor. A part of the field plate electrode partially overlaps with the second conductivity type region. The field plate electrode is electrically coupled to a drain electrode of the coupling transistor at a portion located on the first circuit region side from a center thereof in a width direction of the separation region. A ground potential or a power potential of the second circuit is applied to the field plate electrode at a portion located on the second conductivity type region side from the center.

    Abstract translation: 场板电极在沿着第一电路区域的边缘的方向上以折叠方式或螺旋形状重复地布置。 耦合晶体管将第一电路耦合到电源电压低于第一电路的第二电路。 第二导电类型区域设置在耦合晶体管周围。 场板电极的一部分与第二导电类型区域部分重叠。 场平板电极在分离区域的宽度方向上的位于第一电路区域侧的部分的电极上耦合到耦合晶体管的漏电极。 第二电路的接地电位或功率电位在距中心的第二导电类型区域侧的部分施加到场板电极。

    SEMICONDUCTOR DEVICE
    12.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140167171A1

    公开(公告)日：2014-06-19

    申请号：US14085942

    申请日：2013-11-21

    Applicant: Renesas Electronics Corporation

    Inventor： Yoshinori Kaya ,  Yasushi Nakahara

    IPC: H01L29/40 ,  H01L29/06 ,  H01L29/78

    CPC classification number: H01L29/0642 ,  H01L21/761 ,  H01L21/823481 ,  H01L27/0207 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/7816

    Abstract: An isolation region includes an element isolation film and a field plate electrode. The field plate electrode overlaps the element isolation film and surrounds a first circuit when seen in a plan view. A part of the field plate electrode is also positioned on a connection transistor. A source and a drain of the connection transistor are opposite to each other through the field plate electrode when seen in a plan view. In addition, the field plate electrode is divided into a first portion including a portion that is positioned on the connection transistor, and a second portion other than the first portion.

    Abstract translation: 隔离区域包括元件隔离膜和场板电极。 当在平面图中看时，场板电极与元件隔离膜重叠并围绕第一电路。 场板电极的一部分也位于连接晶体管上。 当在平面图中看时，连接晶体管的源极和漏极彼此相对通过场板电极。 此外，场板电极被分成包括位于连接晶体管上的部分的第一部分和除第一部分之外的第二部分。

    SEMICONDUCTOR DEVICE
    15.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20160148995A1

    公开(公告)日：2016-05-26

    申请号：US14977355

    申请日：2015-12-21

    Applicant: Renesas Electronics Corporation

    Inventor： Yoshinori Kaya ,  Yasushi Nakahara ,  Ryo Kanda ,  Tetsu Toda

    IPC: H01L29/06 ,  H01L27/02 ,  H01L29/40 ,  H03K19/0175 ,  H01L29/78

    CPC classification number: H01L29/0619 ,  H01L27/0207 ,  H01L27/092 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835 ,  H03K19/017509

    Abstract: A semiconductor device including a first circuit region in which a first circuit whose power supply potential is a first voltage is formed; a second circuit region in which a second circuit whose power supply potential is a second voltage lower than the first voltage is formed a separation region which separates the first circuit region from the second circuit region; and a transistor which is located in the separation region and couples the second circuit to the first circuit and whose source and drain are of a first conductivity type, the separation region including an element separation film; a first field plate which overlaps with the element separation film in plan view; a plurality of conductive films which are provided over the first field plate.

    Abstract translation: 一种半导体器件，包括形成第一电路的第一电路区域，其中第一电路的电源电位为第一电压; 电源电位低于第一电压的第二电压的第二电路形成第二电路区域，该分离区域将第一电路区域与第二电路区域分离; 以及晶体管，其位于所述分离区域中并且将所述第二电路耦合到所述第一电路，并且其源极和漏极是第一导电类型，所述分离区域包括元件分离膜; 在平面图中与元件分离膜重叠的第一场板; 设置在第一场板上的多个导电膜。

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