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公开(公告)号：US06420749B1
公开(公告)日：2002-07-16
申请号：US09602427
申请日：2000-06-23
申请人： Ramachandra Divakaruni , Jeffrey P. Gambino , Edward W. Kiewra , Jack A. Mandelman , Carl Radens , William R. Tonti
发明人： Ramachandra Divakaruni , Jeffrey P. Gambino , Edward W. Kiewra , Jack A. Mandelman , Carl Radens , William R. Tonti
IPC分类号： H01L27108
CPC分类号： H01L21/823481 , H01L21/743 , H01L21/76232 , H01L21/76895 , H01L21/823475 , H01L27/10897
摘要： A method and structure for a semiconductor device which includes a substrate comprising trenches, a plurality of devices on the substrate isolated by the trenches, conductive sidewall spacers within the trenches, and an insulator filling the trenches between the conductive sidewall spacers. A first conductive sidewall spacer is electrically connected to a first device of said plurality of devices and a second conductive sidewall spacer is electrically connected to a second device of the plurality of devices. The first device can be biased independently of the second device. A contact extends above a surface of the substrate. A first contact abuts a first device and a first conductive sidewall spacer. An insulator separates the conductive sidewall spacers. A first contact may be equidistant between the first conductor and the second conductor. The conductive sidewall spacers comprise field shields.
摘要翻译： 一种用于半导体器件的方法和结构，其包括：衬底，其包括沟槽，在衬底上隔离的衬底上的多个器件，沟槽内的导电侧壁间隔物，以及填充导电侧壁间隔物之间的沟槽的绝缘体。 第一导电侧壁间隔件电连接到所述多个器件中的第一器件，并且第二导电侧壁间隔件电连接到多个器件中的第二器件。 第一装置可以独立于第二装置而被偏置。 接触件在衬底的表面上方延伸。 第一接触件邻接第一器件和第一导电侧壁间隔物。 绝缘体将导电侧墙隔离开。 第一接触件可以在第一导体和第二导体之间等距。 导电侧壁间隔件包括场屏蔽。
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公开(公告)号：US06274441B1
公开(公告)日：2001-08-14
申请号：US09560073
申请日：2000-04-27
IPC分类号： H01L2170
CPC分类号： H01L29/1045 , H01L21/266 , H01L27/10861 , H01L27/10873 , H01L27/10888 , H01L29/1083 , H01L29/6653 , H01L29/66659
摘要： A method for fabricating a MOSFET device including a halo implant comprising providing a semiconductor substrate, a gate insulator layer, a conductor layer, an overlying silicide layer, and an insulating cap; patterning and etching the silicide layer and the insulating cap; providing insulating spacers along sides of said silicide layer and insulating cap; implanting node and bitline N+ diffusion regions; patterning a photoresist layer to protect the node diffusion region and supporting PFET source and drain regions and expose the bitline diffusion region and NFET source and drain regions; etching exposed spacer material from the side of said silicide layer and insulating cap; implanting a P-type impurity halo implant into the exposed bitline diffusion region and supporting NFET source and drain regions; and stripping the photoresist layer and providing an insulating spacer along the exposed side of said silicide layer and insulating cap.
摘要翻译： 一种制造包括卤素注入的MOSFET器件的方法，包括提供半导体衬底，栅极绝缘体层，导体层，上覆硅化物层和绝缘帽; 图案化和蚀刻硅化物层和绝缘帽; 在所述硅化物层和绝缘盖的侧面提供绝缘垫片; 植入节点和位线N +扩散区域; 图案化光致抗蚀剂层以保护节点扩散区域并支持PFET源极和漏极区域并暴露位线扩散区域和NFET源极和漏极区域; 从所述硅化物层和绝缘盖的侧面蚀刻暴露的间隔物材料; 将P型杂质卤素注入植入暴露的位线扩散区并支持NFET源极和漏极区; 并剥离光致抗蚀剂层，并沿着所述硅化物层和绝缘帽的暴露侧提供绝缘间隔物。
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公开(公告)号：US06518641B2
公开(公告)日：2003-02-11
申请号：US09861274
申请日：2001-05-18
IPC分类号： H01L2900
CPC分类号： H01L21/76232 , H01L21/764
摘要： An isolation region for a memory array in which the isolation region includes at least one trench region having sidewalls that extend to a bottom surface and a slit region formed beneath the final trench region, wherein the slit region is narrower than the overlying trench regions and has a void formed intentionally therein is provided.
摘要翻译： 一种用于存储器阵列的隔离区域，其中隔离区域包括至少一个具有延伸到底表面的侧壁和形成在最终沟槽区域下方的狭缝区域的沟槽区域，其中狭缝区域比上覆沟槽区域窄，并且具有 提供了有意形成的空隙。
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14.发明授权
公开(公告)号：US06150212A
公开(公告)日：2000-11-21
申请号：US359287
申请日：1999-07-22
申请人： Ramachandra Divakaruni , Jeffrey P. Gambino , Jack A. Mandelman , Carl J. Radens , William R. Tonti
发明人： Ramachandra Divakaruni , Jeffrey P. Gambino , Jack A. Mandelman , Carl J. Radens , William R. Tonti
IPC分类号： H01L21/762 , H01L21/8242
CPC分类号： H01L21/76232 , H01L27/10861 , H01L27/1087
摘要： A method for forming an isolation trench region in a semiconductor substrate includes providing the trench region in the semiconductor substrate, adding spacer material at least to sidewalls of the trench region, and etching the trench region at a bottom surface thereof to extend the trench region below the bottom surface and form a crevice region. The spacer material may be subsequently heated such that the spacer material flows from the sidewalls and into the crevice region.
摘要翻译： 一种用于在半导体衬底中形成隔离沟槽区域的方法包括：在半导体衬底中设置沟槽区域，至少在沟槽区域的侧壁上添加衬垫材料，并在其底表面处蚀刻沟槽区域，以将沟槽区域延伸到下面 底面并形成缝隙区域。 间隔物材料可以随后被加热，使得间隔物材料从侧壁流入缝隙区域。
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公开(公告)号：US06802033B1
公开(公告)日：2004-10-05
申请号：US09286855
申请日：1999-04-06
申请人： Claude L. Bertin , Alvar A. Dean , Kenneth J. Goodnow , Scott W. Gould , Patrick E. Perry , Wilbur D. Pricer , William R. Tonti
发明人： Claude L. Bertin , Alvar A. Dean , Kenneth J. Goodnow , Scott W. Gould , Patrick E. Perry , Wilbur D. Pricer , William R. Tonti
IPC分类号： G06F1100
CPC分类号： G06F11/10 , H04L1/0053
摘要： A way of dynamically modifying error recovery on a communications controller to operate at the lowest power mode allowed by current error rate conditions. When operating conditions are good and a small number of errors are detected, a low power error detection/correction mode is entered saving battery life. The low power error correction mechanism runs at a slower frequency and lower power than the high power mechanism and maintains the same data rate for the controller, thus saving power. Selecting the controller error (power) mode may be externally, such as by a person using a control dial on a cellular telephone when the voice data gets too noisy. Alternatively, the selection can be automatic, a critical error level detector internally making the selection.
摘要翻译： 一种在通信控制器上动态修改错误恢复的方式，以在当前错误率条件允许的最低功耗模式下工作。 当操作条件良好并且检测到少量错误时，输入低功率错误检测/校正模式，从而节省电池寿命。 低功率误差校正机构运行频率较低，功率低于大功率机构，并为控制器保持相同的数据速率，从而节省功耗。 选择控制器错误（电源）模式可以是外部的，例如当语音数据太嘈杂时，人们在蜂窝电话上使用控制拨盘。 或者，选择可以是自动的，在内部进行选择的关键误差电平检测器。
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公开(公告)号：US6097241A
公开(公告)日：2000-08-01
申请号：US159898
申请日：1998-09-24
CPC分类号： G06F1/3203 , G06F1/3296 , Y02B60/1285
摘要： An integrated circuit such as an ASIC device having partitioned functional units with independent threshold voltage control. A first partition is always operated in a normal mode, while subsequent partitions are maintained in a standby mode until a transition is detected at the input of the first partition. The subsequent partitions are switched to the normal mode by lowering the body voltage applied to the devices with each partition. A pulse stretcher is used to keep a partition in a normal mode for a predetermined period of time after the transition is detected.
摘要翻译： 诸如具有独立阈值电压控制的具有分区功能单元的ASIC器件的集成电路。 第一分区总是以正常模式操作，而后续分区保持在待机模式，直到在第一分区的输入处检测到转换。 随后的分区通过降低施加到每个分区的设备的体电压而切换到正常模式。 在检测到转换之后，使用脉冲展开器将分区保持在正常模式下预定的时间段。
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17.发明授权Low powering apparatus for automatic reduction of power in active and standby modes 失效用于在主动和待机模式下自动降低功率的低功率设备
公开(公告)号：US6011383A
公开(公告)日：2000-01-04
申请号：US120211
申请日：1998-07-21
CPC分类号： G06F1/3296 , G06F1/3203 , Y02B60/1285
摘要： A low powering apparatus for automatic reduction of power in active and standby modes is disclosed. The low powering apparatus includes a state detector, a margins of safety device and a positioning device. The state detector detects a first or second state, such as a standby state and an active state, that has predominated in a recent past. The margins of safety device indicates safe low power margins in correlation to the detected first or second state. The positioning device adjusts the power level according to the outputs of the state detector and margins of safety device. Thus, the low powering apparatus minimizes the power level of a system at the first or second state without compromising full performance of the system.
摘要翻译： 公开了一种用于在主动和待机模式下自动降低功率的低功率设备。 低功率装置包括状态检测器，安全装置的边缘和定位装置。 状态检测器检测在最近过去占主导地位的第一或第二状态，例如待机状态和活动状态。 安全装置的边缘表示与检测到的第一或第二状态相关的安全低功率余量。 定位装置根据状态检测器的输出和安全装置的余量调整功率水平。 因此，低功率设备使系统在第一或第二状态下的功率水平最小化，而不会影响系统的全部性能。
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公开(公告)号：US06437385B1
公开(公告)日：2002-08-20
申请号：US09607094
申请日：2000-06-29
IPC分类号： H01L27108
CPC分类号： H01L27/10861 , H01L27/10832 , H01L28/55 , H01L28/87 , H01L29/66181 , H01L29/945
摘要： Use of different materials for different conductive films forming plates or electrodes of one or more capacitors formed in a trench in a body of semiconductor materials allow connections to be made selectively to the plates. The films may be undercut by different etchants at respective connection apertures to avoid formation of connections or connections made by doped polysilicon of different conductivities forming connections to some plates of similarly doped polysilicon and blocking diode junctions with oppositely doped polysilicon. The blocking diodes may include a compensation implant to adjust reverse breakdown characteristics and provide transient and electrostatic discharge protection.
摘要翻译： 对于形成在半导体材料体中的沟槽中的一个或多个电容器形成板或不同导电膜的不同材料的使用允许选择性地连接板。 这些膜可能在相应的连接孔处被不同的蚀刻剂削弱，以避免由不同导电性的掺杂多晶硅形成的连接或连接形成连接到具有相反掺杂多晶硅的类似掺杂多晶硅和阻塞二极管结的某些平板。 阻塞二极管可以包括补偿注入以调整反向击穿特性并提供瞬态和静电放电保护。
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19.发明授权公开(公告)号：US06879638B1
公开(公告)日：2005-04-12
申请号：US09473935
申请日：1999-12-28
CPC分类号： H04L25/4906 , H04L25/4902
摘要： A method and system for providing communication between electronic devices that uses the phase of data transmitted between the devices to indicate logical one and zero values. The method and system has the added benefit of relieving the traditional limitations of voltage communication restraints between devices having differing core voltages (i.e. Differing generations).
摘要翻译： 一种用于在电子设备之间提供通信的方法和系统，其使用在设备之间传输的数据的相位来指示逻辑1和零值。 该方法和系统具有减轻在具有不同核心电压的器件（即不同代）之间的电压通信约束的传统限制的附加益处。
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公开(公告)号：US06496037B1
公开(公告)日：2002-12-17
申请号：US09588202
申请日：2000-06-06
IPC分类号： H03K190175
CPC分类号： H03K19/0005
摘要： An automatic driver adjuster and methods using the same are provided that modify off-chip drivers based on load characteristics. The preferred embodiments are preferably automatic and require little or no human intervention. Preferred embodiments of the current invention analyze and determine the impedance of a node and adjust a number of output drivers in response to the impedance of the node, or analyze a resultant waveform of the node, caused by an input waveform, and adjust a number of output drivers in response to the resultant waveform of the node.
摘要翻译： 提供了一种自动驱动器调节器及其使用方法，其基于负载特性修改片外驱动器。 优选的实施方案优选是自动的，并且需要很少的或不需要人为干预。 本发明的优选实施例分析和确定节点的阻抗并且响应于节点的阻抗调整输出驱动器的数量，或者分析由输入波形引起的节点的合成波形，并且调整多个 输出驱动器响应于该结点的合成波形。
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