公开(公告)号：US08253243B2

公开(公告)日：2012-08-28

申请号：US13179175

申请日：2011-07-08

申请人： Robin Wilson

发明人： Robin Wilson

IPC分类号： H01L23/34 ,  H01L21/00

CPC分类号： H01L29/34 ,  B81C1/00952 ,  B81C2201/115 ,  H01L21/76251

摘要： A method of manufacturing a semiconductor device includes providing first and second semiconductor substrates, each having first and second main surfaces opposite to one another. A roughened surface is formed on at least one of the first main surface of the first semiconductor substrate and the second main surface of the second semiconductor substrate. A dielectric layer is formed on the first main surface of the semiconductor substrate and the second semiconductor substrate is disposed on the dielectric layer opposite to the first semiconductor substrate. The second main surface of the second semiconductor substrate contacts the dielectric layer.

摘要翻译： 一种制造半导体器件的方法包括提供第一和第二半导体衬底，每个具有彼此相对的第一和第二主表面。 粗糙表面形成在第一半导体衬底的第一主表面和第二半导体衬底的第二主表面中的至少一个上。 电介质层形成在半导体衬底的第一主表面上，第二半导体衬底设置在与第一半导体衬底相对的电介质层上。 第二半导体衬底的第二主表面接触电介质层。

公开(公告)号：US20110306295A1

公开(公告)日：2011-12-15

申请号：US13130365

申请日：2009-11-26

申请人： Paul Butler ,  David Miles ,  Robin Wilson

发明人： Paul Butler ,  David Miles ,  Robin Wilson

IPC分类号： H04B5/00 ,  H02M7/02

CPC分类号： G05F1/613 ,  H02J5/005 ,  H02J7/025 ,  H02J50/10 ,  H04B5/0037 ,  H04B5/0081

摘要： A NFC enabled device to couple inductively to the H field of an RF signal and a regulator to regulate a voltage derived from an RF signal inductively coupled to the inductive coupler. The regulator has at least one voltage controlled impedance having a switch on voltage. A regulator controller provides a control voltage to each voltage controlled impedance such as that the control voltage is not less than the switch on voltage of the voltage controlled impedance.

摘要翻译： 一种启用NFC的设备，用于将电感耦合到RF信号的H场和调节器，以调节从感应耦合到电感耦合器的RF信号导出的电压。 调节器具有至少一个具有接通电压的压控阻抗。 调节器控制器为每个电压控制的阻抗提供控制电压，例如控制电压不小于压控阻抗的开启电压。

公开(公告)号：US20110260265A1

公开(公告)日：2011-10-27

申请号：US13179175

申请日：2011-07-08

申请人： Robin Wilson

发明人： Robin Wilson

IPC分类号： H01L29/66

CPC分类号： H01L29/34 ,  B81C1/00952 ,  B81C2201/115 ,  H01L21/76251

摘要： A method of manufacturing a semiconductor device includes providing first and second semiconductor substrates, each having first and second main surfaces opposite to one another. A roughened surface is formed on at least one of the first main surface of the first semiconductor substrate and the second main surface of the second semiconductor substrate. A dielectric layer is formed on the first main surface of the semiconductor substrate and the second semiconductor substrate is disposed on the dielectric layer opposite to the first semiconductor substrate. The second main surface of the second semiconductor substrate contacts the dielectric layer.

摘要翻译： 一种制造半导体器件的方法包括提供第一和第二半导体衬底，每个具有彼此相对的第一和第二主表面。 粗糙表面形成在第一半导体衬底的第一主表面和第二半导体衬底的第二主表面中的至少一个上。 电介质层形成在半导体衬底的第一主表面上，第二半导体衬底设置在与第一半导体衬底相对的电介质层上。 第二半导体衬底的第二主表面接触电介质层。

公开(公告)号：US07741141B2

公开(公告)日：2010-06-22

申请号：US12371015

申请日：2009-02-13

申请人： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

发明人： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC分类号： H01L21/00

CPC分类号： H01L27/1446 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14683 ,  H01L31/105

摘要： A photodiode having an increased proportion of light-sensitive area to light-insensitive area includes a semiconductor having a backside surface and a light-sensitive frontside surface. The semiconductor includes a first active layer having a first conductivity, a second active layer having a second conductivity opposite the first conductivity, and an intrinsic layer separating the first and second active layers. A plurality of isolation trenches are arranged to divide the photodiode into a plurality of cells. Each cell has a total frontside area including a cell active frontside area sensitive to light and a cell inactive frontside area not sensitive to light. The cell active frontside area forms at least 95 percent of the cell total frontside area. A method of forming the photodiode is also disclosed.

摘要翻译： 光敏面积比例增加到光不敏感区域的光电二极管包括具有背面和感光前侧表面的半导体。 半导体包括具有第一导电性的第一有源层，具有与第一导电性相反的第二导电性的第二有源层和分离第一和第二有源层的本征层。 布置多个隔离沟以将光电二极管分成多个单元。 每个细胞具有包括对光敏感的细胞活性前方区域和对光不敏感的细胞非活动的前侧区域的总前方区域。 细胞活动前方区域形成至少95％的细胞总前方区域。 还公开了一种形成光电二极管的方法。

公开(公告)号：US07709950B2

公开(公告)日：2010-05-04

申请号：US12202638

申请日：2008-09-02

申请人： Cormac MacNamara ,  Conor Brogan ,  Hiugh J. Griffin ,  Robin Wilson

发明人： Cormac MacNamara ,  Conor Brogan ,  Hiugh J. Griffin ,  Robin Wilson

IPC分类号： H01L23/12 ,  H01L23/48

CPC分类号： H01L21/76898 ,  B81B2207/096 ,  B81C1/00301 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device includes providing a semiconductor substrate having first and second main surfaces opposite to each other. A trench is formed in the semiconductor substrate at the first main surface. The trench extends to a first depth position in the semiconductor substrate. The trench is lined with the dielectric material. The trench is filled with a conductive material. An electrical component is electrically connected to the conductive material exposed at the first main surface. A cap is mounted to the first main surface. The cap encloses the electrical component and the electrical connection.

摘要翻译： 一种制造半导体器件的方法包括提供具有彼此相对的第一和第二主表面的半导体衬底。 在第一主表面上的半导体衬底中形成沟槽。 沟槽延伸到半导体衬底中的第一深度位置。 沟槽衬有介电材料。 沟槽填充有导电材料。 电气部件电连接到在第一主表面露出的导电材料。 盖子安装到第一主表面。 盖子包围电气部件和电气连接。

公开(公告)号：US20100065946A1

公开(公告)日：2010-03-18

申请号：US12413972

申请日：2009-03-30

申请人： Robin Wilson

发明人： Robin Wilson

IPC分类号： H01L29/30 ,  H01L21/30

CPC分类号： H01L29/34 ,  B81C1/00952 ,  B81C2201/115 ,  H01L21/76251

摘要： A method of manufacturing a semiconductor device includes providing first and second semiconductor substrates, each having first and second main surfaces opposite to one another. A roughened surface is formed on at least one of the first main surface of the first semiconductor substrate and the second main surface of the second semiconductor substrate. A dielectric layer is formed on the first main surface of the semiconductor substrate and the second semiconductor substrate is disposed on the dielectric layer opposite to the first semiconductor substrate. The second main surface of the second semiconductor substrate contacts the dielectric layer.

摘要翻译： 一种制造半导体器件的方法包括提供第一和第二半导体衬底，每个具有彼此相对的第一和第二主表面。 粗糙表面形成在第一半导体衬底的第一主表面和第二半导体衬底的第二主表面中的至少一个上。 电介质层形成在半导体衬底的第一主表面上，第二半导体衬底设置在与第一半导体衬底相对的电介质层上。 第二半导体衬底的第二主表面接触电介质层。

公开(公告)号：US07560791B2

公开(公告)日：2009-07-14

申请号：US11554437

申请日：2006-10-30

申请人： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

发明人： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC分类号： H01L31/075

CPC分类号： H01L31/105 ,  H01L27/1446 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A photodetector includes a semiconductor substrate having first and second main surfaces opposite to each other. The photodetector includes at least one trench formed in the first main surface and a first anode/cathode region having a first conductivity formed proximate the first main surface and sidewalls of the at least one trench. The photodetector includes a second anode/cathode region proximate the second main surface. The second anode/cathode region has a second conductivity opposite the first conductivity. The at least one trench extends to the second main surface of the semiconductor substrate.

摘要翻译： 光检测器包括具有彼此相对的第一和第二主表面的半导体衬底。 光电检测器包括形成在第一主表面中的至少一个沟槽和第一阳极/阴极区域，其具有靠近第一主表面和至少一个沟槽的侧壁附近形成的第一导电性。 光电检测器包括靠近第二主表面的第二阳极/阴极区域。 第二阳极/阴极区具有与第一导电性相反的第二导电性。 至少一个沟槽延伸到半导体衬底的第二主表面。

公开(公告)号：US07553764B2

公开(公告)日：2009-06-30

申请号：US11381605

申请日：2006-05-04

申请人： Cormac MacNamara ,  Conor Brogan ,  Hugh J. Griffin ,  Robin Wilson

发明人： Cormac MacNamara ,  Conor Brogan ,  Hugh J. Griffin ,  Robin Wilson

IPC分类号： H01L21/44 ,  H01L21/311

CPC分类号： H01L21/76898 ,  B81B2207/096 ,  B81C1/00301 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device includes providing a semiconductor substrate having first and second main surfaces opposite to each other. A trench is formed in the semiconductor substrate at the first main surface. The trench extends to a first depth position in the semiconductor substrate. The trench is lined with the dielectric material. The trench is filled with a conductive material. An electrical component is electrically connected to the conductive material exposed at the first main surface. A cap is mounted to the first main surface. The cap encloses the electrical component and the electrical connection.

摘要翻译： 一种制造半导体器件的方法包括提供具有彼此相对的第一和第二主表面的半导体衬底。 在第一主表面上的半导体衬底中形成沟槽。 沟槽延伸到半导体衬底中的第一深度位置。 沟槽衬有介电材料。 沟槽填充有导电材料。 电气部件电连接到在第一主表面露出的导电材料。 盖子安装到第一主表面。 盖子包围电气部件和电气连接。

公开(公告)号：US20080315269A1

公开(公告)日：2008-12-25

申请号：US12204371

申请日：2008-09-04

申请人： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

发明人： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC分类号： H01L31/113

CPC分类号： H01L27/14683 ,  H01L27/1463

摘要： A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodetector includes at least one conductive via formed in the first main surface and an anode/cathode region proximate the first main surface and the at least one conductive via. The via extends to the second main surface. The conductive via is isolated from the semiconductor substrate by a first dielectric material. The anode/cathode region is a second conductivity opposite to the first conductivity. The photodetector includes a doped isolation region of a third doping concentration formed in the first main surface and extending through the first layer of the semiconductor substrate to at least the second layer of the semiconductor substrate.

摘要翻译： 光电检测器阵列包括具有相对的第一和第二主表面的半导体衬底，靠近第一主表面的第一掺杂浓度的第一层和靠近第二主表面的第二掺杂浓度的第二层。 光电检测器包括形成在第一主表面中的至少一个导电通孔和靠近第一主表面和至少一个导电通孔的阳极/阴极区域。 通孔延伸到第二主表面。 导电通孔通过第一电介质材料与半导体衬底隔离。 阳极/阴极区域是与第一导电性相反的第二导电性。 光电检测器包括形成在第一主表面中并延伸穿过半导体衬底的第一层的至少第二层半导体衬底的第三掺杂浓度的掺杂隔离区。

公开(公告)号：US20070138588A1

公开(公告)日：2007-06-21

申请号：US11609934

申请日：2006-12-13

申请人： Robin Wilson ,  Conor Brogan ,  Hugh Griffin ,  Cormac MacNamara

发明人： Robin Wilson ,  Conor Brogan ,  Hugh Griffin ,  Cormac MacNamara

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L31/022408

摘要： A backlit photodiode array includes a semiconductor substrate having first and second main surfaces opposite to each other. A first dielectric layer is formed on the first main surface. First and second conductive vias are formed extending from the second main surface through the semiconductor substrate and the first dielectric layer. The first and second conductive vias are isolated from the semiconductor substrate by a second dielectric material. A first anode/cathode layer of a first conductivity is formed on the first dielectric layer and is electrically coupled to the first conductive via. An intrinsic semiconductor layer is formed on the first anode/cathode layer. A second anode/cathode layer of a second conductivity opposite to the first conductivity is formed on the intrinsic semiconductor layer and is electrically coupled to the second conductive via.

摘要翻译： 背光光电二极管阵列包括具有彼此相对的第一和第二主表面的半导体衬底。 第一介电层形成在第一主表面上。 第一和第二导电通孔从第二主表面延伸穿过半导体衬底和第一介电层形成。 第一和第二导电通孔通过第二电介质材料与半导体衬底隔离。 在第一电介质层上形成第一导电性的第一阳极/阴极层，并与第一导电通孔电耦合。 在第一阳极/阴极层上形成本征半导体层。 在本征半导体层上形成具有与第一导电性相反的第二导电性的第二阳极/阴极层，并与第二导电通孔电耦合。