公开(公告)号：US09281239B2

公开(公告)日：2016-03-08

申请号：US13126057

申请日：2009-10-26

Applicant: Roel Daamen ,  Matthias Merz

Inventor： Roel Daamen ,  Matthias Merz

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/3213

CPC classification number: H01L21/76849 ,  H01L21/32134 ,  H01L21/7684 ,  H01L21/76883

Abstract: A biocompatible electrode is manufactured by depositing filling metal 36 and etching back the filling metal to the surface of the surrounding insulator 30. Then, a further etch forms a recess 38 at the top of the via 32. An electrode metal 40 is then deposited and etched back to fill the recess 38 and form biocompatible electrode 42. In this way, a planar biocompatible electrode is achieved. The step of etching to form the recess may be carried out in the same CMP tool as is used to etch back the filling metal 36. A hydrogen peroxide etch may be used.

Abstract translation: 通过沉积填充金属36并将填充金属蚀刻回到周围绝缘体30的表面来制造生物相容性电极。然后，另外的蚀刻在通孔32的顶部形成凹部38.然后沉积电极金属40， 回蚀以填充凹部38并形成生物相容性电极42.以这种方式，实现平面生物相容性电极。 蚀刻形成凹部的步骤可以在与用于回填填充金属36相同的CMP工具中进行。可以使用过氧化氢蚀刻。

公开(公告)号：US08925371B2

公开(公告)日：2015-01-06

申请号：US13382726

申请日：2010-07-16

Applicant: Aurelie Humbert ,  Youri Victorovitch Ponomarev ,  Roel Daamen ,  Matthias Merz

Inventor： Aurelie Humbert ,  Youri Victorovitch Ponomarev ,  Roel Daamen ,  Matthias Merz

IPC: G01N7/00 ,  G01N19/10 ,  G01N27/22 ,  G01N33/00

CPC classification number: G01N27/223 ,  G01N33/004

Abstract: A sensor (2) for sensing a first substance and a second substance, the sensor comprising first (3) and second (5) sensor components each comprising a first material (20), the first material being sensitive to both the first substance and the second substance, the sensor further comprising a barrier (18) for preventing the second substance from passing into the second sensor component (5).

Abstract translation: 一种用于感测第一物质和第二物质的传感器（2），所述传感器包括第一（3）和第二（5）个传感器部件，每个传感器部件包括第一材料（20），所述第一材料对第一物质和 第二物质，传感器还包括用于防止第二物质进入第二传感器部件（5）的阻挡层（18）。

公开(公告)号：US20130032903A1

公开(公告)日：2013-02-07

申请号：US13556926

申请日：2012-07-24

Applicant: Matthias Merz ,  Aurelie Humbert ,  Roel Daamen ,  David Tio Castro

Inventor： Matthias Merz ,  Aurelie Humbert ,  Roel Daamen ,  David Tio Castro

IPC: H01L29/66 ,  H01L21/02

CPC classification number: G01N27/128 ,  G01N25/18 ,  G01N27/121 ,  G01N27/125 ,  G01N27/22 ,  G01N33/004 ,  G01N33/18 ,  G01N33/1826 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/1461 ,  H01L2924/00

Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24, 26, 28) covering the metallization stack; a gas sensor including a sensing material portion (32, 74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.

公开(公告)号：US20110207239A1

公开(公告)日：2011-08-25

申请号：US13126057

申请日：2009-10-26

Applicant: Roel Daamen ,  Matthias Merz

Inventor： Roel Daamen ,  Matthias Merz

IPC: H01L21/283

CPC classification number: H01L21/76849 ,  H01L21/32134 ,  H01L21/7684 ,  H01L21/76883

Abstract: A biocompatible electrode is manufactured by depositing filling metal 36 and etching back the filling metal to the surface of the surrounding insulator 30. Then, a further etch forms a recess 38 at the top of the via 32. An electrode metal 40 is then deposited and etched back to fill the recess 38 and form biocompatible electrode 42. In this way, a planar biocompatible electrode is achieved. The step of etching to form the recess may be carried out in the same CMP tool as is used to etch back the filling metal 36. A hydrogen peroxide etch may be used.

Abstract translation: 通过沉积填充金属36并将填充金属蚀刻回到周围绝缘体30的表面来制造生物相容性电极。然后，另外的蚀刻在通孔32的顶部形成凹部38.然后沉积电极金属40， 回蚀以填充凹部38并形成生物相容性电极42.以这种方式，实现平面生物相容性电极。 蚀刻形成凹部的步骤可以在与用于回填填充金属36相同的CMP工具中进行。可以使用过氧化氢蚀刻。

公开(公告)号：US08801917B2

公开(公告)日：2014-08-12

申请号：US13061110

申请日：2009-08-24

Applicant: Matthias Merz ,  Youri Victorovitch Ponomarev ,  Gilberto Curatola

Inventor： Matthias Merz ,  Youri Victorovitch Ponomarev ,  Gilberto Curatola

IPC: G01N27/327

CPC classification number: G01N27/4148 ,  G01N27/4145

Abstract: The invention relates to a method of determining a charged particle concentration in an analyte (100), the method comprising steps of: i) determining at least two measurement points of a surface-potential versus interface-temperature curve (c1, c2, c3, c4), wherein the interface temperature is obtained from a temperature difference between a first interface between a first ion-sensitive dielectric (Fsd) and the analyte (100) and a second interface between a second ion-sensitive dielectric (Ssd) and the analyte (100), and wherein the surface-potential is obtained from a potential difference between a first electrode (Fe) and a second electrode (Se) onto which said first ion-sensitive dielectric (Fsd) and said second ion-sensitive dielectric (Ssd) are respectively provided, And ii) calculating the charged particle concentration from locations of the at least two measurement points of said curve (c1, c2, c3, c4). This method, which still is a potentiometric electrochemical measurement, exploits the temperature dependency of a surface-potential of an ion-sensitive dielectric in an analyte. The invention further provides an electrochemical sensor for determining a charged particle concentration in an analyte. The invention also provides various sensors which can be used to determine the charged particle concentration, i.e. EGFET's and EIS capacitors.

Abstract translation: 本发明涉及一种测定分析物（100）中带电粒子浓度的方法，所述方法包括以下步骤：i）确定表面电位对界面温度曲线（c1，c2，c3，c3）的至少两个测量点， c4），其中所述界面温度是由第一离子敏感电介质（Fsd）和分析物（100）之间的第一界面与第二离子敏感电介质（Ssd）与分析物之间的第二界面 （100），并且其中所述表面电位由所述第一离子敏感电介质（Fsd）和所述第二离子敏感电介质（Ssd）上的第一电极（Fe）和第二电极（Se）之间的电位差获得， ），和ii）从所述曲线（c1，c2，c3，c4）的至少两个测量点的位置计算带电粒子浓度。 这种仍然是电位电化学测量的方法利用分析物中离子敏感电介质的表面电位的温度依赖性。 本发明还提供了一种用于测定分析物中带电粒子浓度的电化学传感器。 本发明还提供可用于确定带电粒子浓度的各种传感器，即EGFET和EIS电容器。

公开(公告)号：US08669124B2

公开(公告)日：2014-03-11

申请号：US13059410

申请日：2009-08-12

Applicant: Matthias Merz

Inventor： Matthias Merz

IPC: H01L21/66 ,  H01L29/66

CPC classification number: G01N33/48721 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A detector device and method of its fabrication are disclosed. Illustratively, an additional via is present through an insulator layer over a gate channel region which is on top of the channel region. The additional via is filled with conductor material. The conductor material is removed to form a chamber leading to one side of the gate channel region. Furthermore, a nanopore is etched from the chamber through the channel region.

Abstract translation: 公开了一种检测器件及其制造方法。 说明性地，在通道区域顶部的栅极沟道区域上通过绝缘体层存在另外的通孔。 额外的通孔填充有导体材料。 去除导体材料以形成通向栅极沟道区一侧的室。 此外，通过沟道区从腔室蚀刻纳米孔。

公开(公告)号：US20130032902A1

公开(公告)日：2013-02-07

申请号：US13556676

申请日：2012-07-24

Applicant: Matthias Merz

Inventor： Matthias Merz

IPC: H01L27/14 ,  H01L21/02

CPC classification number: G01N27/128 ,  G01N25/18 ,  G01N27/121 ,  G01N27/125 ,  G01N27/22 ,  G01N33/004 ,  G01N33/18 ,  G01N33/1826 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/1461 ,  H01L2924/00

Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24, 26, 28) covering the metallization stack; a gas sensor including a sensing material portion (32, 74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.

Abstract translation: 公开了一种集成电路，其包括承载多个电路元件的基板（10） 互连所述电路元件的金属化堆叠（12,14,16），所述金属化堆叠包括图案化的上金属化层，包括第一金属部分（20）和第二金属部分（21）; 覆盖金属化堆叠的钝化堆叠（24,26,28）; 气体传感器，其包括在所述钝化层上的感测材料部分（32,74）; 延伸穿过所述钝化层的第一导电部分（38），其将所述感测材料部分的第一区域连接到所述第一金属部分; 以及延伸穿过所述钝化层的第二导电部分（40），其将所述感测材料部分的第二区域连接到所述第二金属部分。 还公开了制造这种IC的方法。

公开(公告)号：US20110133255A1

公开(公告)日：2011-06-09

申请号：US13059410

申请日：2009-08-12

Applicant: Matthias Merz

Inventor： Matthias Merz

IPC: H01L29/78 ,  H01L21/336 ,  B82Y15/00

CPC classification number: G01N33/48721 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A detector device: a source region (S), a drain region (D) and a gate contact (100) on a substrate (104), with a channel region between the source and drain regions (S, D), an insulator layer over the substrate, comprising vias (140, 142, 144) filled with conductor material, wherein the vias (140, 142, 144) are provided over the source, drain regions and a gate contact, an additional via (152) through the insulator layer, defining a first chamber leading to a first side of the channel region, a nanopore etched from this first chamber through the channel region, and connecting the first chamber to a second chamber, a drive means (60) for providing a voltage bias between the two chambers, a drive means for providing a voltage between the source and drain regions and gate, a current sensor (64) for sensing a charge flow between the source and the drain regions.

Abstract translation: 检测器装置：在源极和漏极区域（S，D）之间具有沟道区域的衬底（104）上的源极区（S），漏极区（D）和栅极接触（100），绝缘体层 在衬底上，包括填充有导体材料的通孔（140,142,144），其中通孔（140,142,144）设置在源极，漏极区域和栅极接触之上，通过绝缘体的附加通孔（152） 层，限定通向通道区域的第一侧的第一室，从该第一室通过沟道区蚀刻的纳米孔，以及将第一室连接到第二室;驱动装置（60），用于在 两个腔室，用于在源极和漏极区域和栅极之间提供电压的驱动装置，用于感测源极和漏极区域之间的电荷流的电流传感器（64）。

公开(公告)号：US20110100810A1

公开(公告)日：2011-05-05

申请号：US13001804

申请日：2009-05-19

Applicant: Matthias Merz

Inventor： Matthias Merz

IPC: G01N27/414 ,  H01L29/772 ,  H01L21/335

CPC classification number: G01N27/227

Abstract: A chip integrated ion sensor is provided, which comprises a substrate having arranged thereon an electrolyte insulator semiconductor structure and a reference electrode. In particular, the electrolyte insulator semiconductor (EIS) structure may be formed on a chip already processed, i.e. the EIS structure may be formed in a Back End process on an already formed chip comprising a plurality of formed electronic components. In particular, the ion sensor may be adapted to form an ion concentration sensor, e.g. a pH sensor, i.e. may form a pH sensor. The reference electrode may be a non-polarizable electrode. In particular, the reference electrode may comprise Ag or AgCl as material.

Abstract translation: 提供一种芯片集成离子传感器，其包括其上布置有电解质绝缘体半导体结构和参考电极的基板。 特别地，可以在已经处理的芯片上形成电解绝缘体半导体（EIS）结构，即EIS结构可以在已经形成的包括多个形成的电子部件的芯片的后端工艺中形成。 特别地，离子传感器可以适于形成离子浓度传感器，例如， pH传感器，即可形成pH传感器。 参考电极可以是非极化电极。 特别地，参考电极可以包括Ag或AgCl作为材料。

公开(公告)号：US20100041988A1

公开(公告)日：2010-02-18

申请号：US12442197

申请日：2007-09-19

Applicant: Remco H. W. Pijnenburg ,  Youri V. Ponomarev ,  Matthias Merz

Inventor： Remco H. W. Pijnenburg ,  Youri V. Ponomarev ,  Matthias Merz

IPC: A61B8/00 ,  A61N7/00

CPC classification number: A61B17/2202 ,  A61B17/2256 ,  A61B2017/00106

Abstract: A method is disclosed using a feedback loop for focused ultrasound application. The method includes the steps of determining a location of a target side within a body using ultrasound waves, applying focused ultrasound waves to the target site, determining a new location of the target site using further ultrasound waves, and adjusting the focused ultrasound waves in response to the new location of the target site.

Abstract translation: 公开了一种使用聚焦超声应用的反馈回路的方法。 该方法包括以下步骤：使用超声波确定身体内目标侧的位置，向目标位置施加聚焦超声波，使用另外的超声波确定目标位置的新位置，以及响应于调整聚焦超声波 到目标网站的新位置。