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11.发明授权Method and apparatus for establishing electrical contact between a wafer and a chuck 失效用于建立晶片和卡盘之间的电接触的方法和装置
公开(公告)号：US6121783A
公开(公告)日：2000-09-19
申请号：US839217
申请日：1997-04-22
IPC分类号： G01R31/28 , G01R31/312 , H01L21/66 , G01R31/02
CPC分类号： G01R31/2886 , G01R31/2831 , G01R31/312 , H01L22/14
摘要： A needle is pressed into the backside oxide of a semiconductor wafer and a voltage applied to the wafer greater than the breakdown voltage of the oxide in order to make an electrical contact with the bulk material of the wafer. A capacitor plate is provided proximate to a wafer on a chuck and a Kelvin probe is provided proximate to the wafer. A varying voltage is applied between the chuck and the capacitor plate and a voltage is monitored between the Kelvin probe and the chuck. The monitored voltage remaining constant indicates electrical contact between the chuck and the wafer.
摘要翻译： 将针压入半导体晶片的背面氧化物和施加到晶片的电压大于氧化物的击穿电压，以便与晶片的体材料电接触。 电容器板靠近卡盘上的晶片设置，开尔文探针靠近晶片设置。 在卡盘和电容器板之间施加变化的电压，并且在开尔文探针和卡盘之间监测电压。 监测电压保持恒定表示卡盘和晶片之间的电接触。
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12.发明授权Non-contact mobile charge measurement with leakage band-bending and dipole correction 失效具有泄漏带弯曲和偶极校正的非接触式移动电荷测量公开(公告)号：US06771092B1
公开(公告)日：2004-08-03
申请号：US10298778
申请日：2002-11-18
IPC分类号： G01R3102
CPC分类号： G01R31/311
摘要： Corona charges are used to bias a wafer to push down mobile charges and then pull them up during temperature cycles. Mobile charge is measured from the drops in the corona voltage due to the mobile charges. Corrections are made in the measurements for dipole potentials, leakage and silicon band-bending.
摘要翻译： 电晕电荷用于偏置晶片以推下移动电荷，然后在温度循环期间将其拉起。 由于移动电荷，电晕电压的下降来测量移动电荷。 在偶极子电位，漏电和硅带弯曲测量中进行校正。
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13.发明授权Contactless charge measurement of product wafers and control of corona generation and deposition 失效产品晶圆的非接触式电荷测量和电晕发生和沉积的控制公开(公告)号：US07538333B1
公开(公告)日：2009-05-26
申请号：US11460517
申请日：2006-07-27
申请人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
发明人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
IPC分类号： H01J37/30 , H01J37/317 , G01R31/26
CPC分类号： G01R31/303 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.
摘要翻译： 提供了用于确定样品性质的系统和方法。 样品可以是产品晶片。 该方法可以包括将聚焦斑点偏置在样本上。 该方法还可以包括测量样品上的测量点的参数。 测量点可能与聚焦点重叠。 此外，该方法可以包括根据测量的参数确定样品的性质。 还提供了用于改变电晕源的性能的系统和方法。 该方法可以包括改变电晕源内的环境的属性。 该性质可以包括但不限于电晕源内的气体的温度，压力，湿度和/或分压。
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公开(公告)号：US07012438B1
公开(公告)日：2006-03-14
申请号：US10616086
申请日：2003-07-09
CPC分类号： H01L22/12 , G01R31/2831 , H01L2924/0002 , H01L2924/00
摘要： A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to leakage and film thickness.
摘要翻译： 提供一种用于确定绝缘膜的性质的方法。 该方法可以包括获得膜的电荷密度测量，膜相对于衬底的体电压电位的表面电压电势以及膜的电压衰减速率。 该方法还可以包括使用电荷密度，表面电压电位和电压衰减速率确定膜的性质。 提供一种确定绝缘膜厚度的方法。 该方法可以包括在膜上沉积电荷，测量膜相对于衬底的体电压电位的表面电压电位，以及测量膜的电压衰减速率。 该方法还可以包括使用电压衰减速率和与泄漏和膜厚度有关的理论模型来确定膜的厚度。
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公开(公告)号：US07358748B1
公开(公告)日：2008-04-15
申请号：US11291075
申请日：2005-11-30
IPC分类号： G01R27/08 , G01R27/26 , G01R31/302 , G01N27/60
CPC分类号： H01L22/12 , G01R31/2831 , H01L2924/0002 , H01L2924/00
摘要： A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to current leakage and film thickness.
摘要翻译： 提供一种用于确定绝缘膜的性质的方法。 该方法可以包括获得膜的电荷密度测量，膜相对于衬底的体电压电位的表面电压电势以及膜的电压衰减速率。 该方法还可以包括使用电荷密度，表面电压电位和电压衰减速率确定膜的性质。 提供一种确定绝缘膜厚度的方法。 该方法可以包括在膜上沉积电荷，测量膜相对于衬底的体电压电位的表面电压电位，以及测量膜的电压衰减速率。 该方法还可以包括使用电压衰减速率和与电流泄漏和膜厚度有关的理论模型来确定膜的厚度。
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16.发明授权Contactless charge measurement of product wafers and control of corona generation and deposition 有权产品晶圆的非接触式电荷测量和电晕发生和沉积的控制公开(公告)号：US07248062B1
公开(公告)日：2007-07-24
申请号：US10701112
申请日：2003-11-04
申请人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
发明人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
IPC分类号： G01R31/26
CPC分类号： G01R31/303 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.
摘要翻译： 提供了用于确定样品性质的系统和方法。 样品可以是产品晶片。 该方法可以包括将聚焦斑点偏置在样本上。 该方法还可以包括测量样品上的测量点的参数。 测量点可能与聚焦点重叠。 此外，该方法可以包括根据测量的参数确定样品的性质。 还提供了用于改变电晕源的性能的系统和方法。 该方法可以包括改变电晕源内的环境的属性。 该性质可以包括但不限于电晕源内的气体的温度，压力，湿度和/或分压。
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17.发明授权Methods for imperfect insulating film electrical thickness/capacitance measurement 失效绝缘膜电气厚度/电容测量不完美的方法公开(公告)号：US07075318B1
公开(公告)日：2006-07-11
申请号：US10754332
申请日：2004-01-09
申请人： Xiafang (Michelle) Zhang , Zhiwei (Steve) Xu , Jianou Shi , Bao Vu , Thomas G. Miller , Gregory S. Horner
发明人： Xiafang (Michelle) Zhang , Zhiwei (Steve) Xu , Jianou Shi , Bao Vu , Thomas G. Miller , Gregory S. Horner
IPC分类号： G01R31/302 , G01R27/26
CPC分类号： G01R31/2648 , G01R27/26 , G01R31/312
摘要： Methods for determining an electrical parameter of an insulating film are provided. One method includes measuring a surface potential of a leaky insulating film without inducing leakage across the insulating film and determining the electrical parameter from the surface potential. Another method includes applying an electrical field across the insulating film. Leakage across the insulating film caused by the electrical field is negligible. The method also includes measuring a surface potential of the specimen and determining a potential of the substrate. In addition, the method includes determining a pure voltage across the insulating film from the surface potential and the substrate potential. The method further includes determining the electrical parameter from the pure voltage. The electrical parameter may be capacitance or electrical thickness of the insulating film.
摘要翻译： 提供了确定绝缘膜的电参数的方法。 一种方法包括测量泄漏绝缘膜的表面电位，而不会导致绝缘膜上的泄漏并且从表面电位确定电参数。 另一种方法包括在绝缘膜上施加电场。 由电场引起的绝缘膜上的泄漏可忽略不计。 该方法还包括测量样品的表面电位并确定衬底的电位。 此外，该方法包括从表面电位和衬底电位确定绝缘膜两端的纯电压。 该方法还包括从纯电压确定电参数。 电气参数可以是绝缘膜的电容或电气厚度。
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18.发明授权公开(公告)号：US08299416B2
公开(公告)日：2012-10-30
申请号：US12660688
申请日：2010-03-01
申请人： Mark A. Arbore , David L Klein , Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
发明人： Mark A. Arbore , David L Klein , Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
CPC分类号： G01N21/55 , G01N21/59 , G01N2021/556 , G01N2201/0627 , G01N2201/0691 , H02S50/10
摘要： The present invention provides a high-speed Quantum Efficiency (QE) measurement device that includes at least one device under test (DUT), at least one conditioned light source with a less than 50 nm bandwidth, where a portion of the conditioned light source is monitored. Delivery optics are provided to direct the conditioned light to the DUT, a controller drives the conditioned light source in a time dependent operation, and at least one reflectance measurement assembly receives a portion of the conditioned light reflected from the DUT. A time-resolved measurement device includes a current measurement device and/or a voltage measurement device disposed to resolve a current and/or voltage generated in the DUT by each conditioned light source, where a sufficiently programmed computer determines and outputs a QE value for each DUT according to an incident intensity of at least one wavelength of from the conditioned light source and the time-resolved measurement.
摘要翻译： 本发明提供了一种高速量子效率（QE）测量装置，其包括至少一个被测器件（DUT），至少一个具有小于50nm带宽的调节光源，其中调节光源的一部分是 监控。 提供输送光学器件以将经调节的光引导到DUT，控制器以时间相关的操作来驱动调节光源，并且至少一个反射测量组件接收从DUT反射的经调节的光的一部分。 时间分辨的测量装置包括电流测量装置和/或电压测量装置，其被设置为通过每个调节光源来分辨在DUT中产生的电流和/或电压，其中充分编程的计算机确定并输出每个 DUT根据来自调节光源的至少一个波长的入射强度和时间分辨测量。
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19.发明授权High speed detection of shunt defects in photovoltaic and optoelectronic devices 有权光电和光电器件分流缺陷的高速检测公开(公告)号：US08278937B2
公开(公告)日：2012-10-02
申请号：US12658489
申请日：2010-02-08
IPC分类号： G01R31/02
CPC分类号： G01R31/2656 , G01N21/66 , H02S50/10
摘要： The current invention provides a shunt defect detection device that includes a device under test (DUT) that is fixedly held by a thermally isolating mount, a power source disposed to provide a directional bias condition to the DUT, a probe disposed to provide a localized power to the DUT from the power source, an emission detector disposed to measure a temporal emission from the DUT when in the directional bias condition, where the measured temporal emission is output as temporal data from the emission detector to a suitably programmed computer that uses the temporal data to determine a heating rate of the DUT and is disposed to estimate an overheat risk level of the DUT, where an output from the computer designates the DUT a pass status, an uncertain status, a fail status or a process to bin status according to the overheat risk level.
摘要翻译： 本发明提供了一种并联缺陷检测装置，其包括由热隔离安装座固定地保持的被测器件（DUT），被设置为向DUT提供定向偏置状态的电源，设置成提供局部电源的探针 从发射检测器输出到来自电源的DUT，发射检测器被设置成在定向偏置条件下测量来自DUT的时间发射，其中测量的时间发射作为时间数据从发射检测器输出到使用时间的适当编程的计算机 数据以确定DUT的加热速率，并且被设置为估计DUT的过热风险水平，其中来自计算机的输出指定DUT通过状态，不确定状态，故障状态或根据 过热风险等级。
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公开(公告)号：US06734696B2
公开(公告)日：2004-05-11
申请号：US10286358
申请日：2002-11-01
IPC分类号： G01R3102
摘要： Non-contact methods for determining a property of an insulating film are provided. One method includes measuring an amount of hysteresis in the insulating film without contacting the insulating film. The method also includes determining the amount of hysteresis in the insulating film. Computer-implemented methods for data analysis are also provided. One computer-implemented method includes determining a single numeric value representing an amount of hysteresis in an insulating film from electrical characteristics of the insulating film. The electrical characteristics are measured without contacting the insulating film. In addition, systems that include a measurement system and a computer-usable carrier medium are provided. The measurement system is configured to measure an amount of hysteresis in an insulating film without contacting the insulating film. The carrier medium includes program instructions, which are executable on a computer system for determining the amount of hysteresis in the insulating film using measurements from the measurement system.
摘要翻译： 提供了用于确定绝缘膜的性质的非接触方法。 一种方法包括测量绝缘膜中的滞后量而不接触绝缘膜。 该方法还包括确定绝缘膜中的滞后量。 还提供了计算机实现的数据分析方法。 一种计算机实现的方法包括从绝缘膜的电特性确定表示绝缘膜中的滞后量的单个数值。 在不接触绝缘膜的情况下测量电特性。 此外，还提供了包括测量系统和计算机可用的载体介质的系统。 测量系统被配置为测量绝缘膜中的滞后量而不接触绝缘膜。 载体介质包括可在计算机系统上执行的程序指令，用于使用来自测量系统的测量来确定绝缘膜中的滞后量。
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