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公开(公告)号：US07499821B2
公开(公告)日：2009-03-03
申请号：US11336293
申请日：2006-01-20
摘要： Embodiments of apparatuses, articles, methods, and systems for measuring sensor drift characteristics are generally described herein. In some embodiments, a system having a sensor platform to receive a sensor and measure drift characteristic of the sensor is disclosed. The system may further include a data acquisition device coupled to the sensor platform to receive the measured drift characteristic and to compare them to acceptance criteria in order to determine an acceptability of the sensor. Other embodiments may be described and claimed.
摘要翻译： 本文通常描述用于测量传感器漂移特性的装置，制品，方法和系统的实施例。 在一些实施例中，公开了具有用于接收传感器并测量传感器的漂移特性的传感器平台的系统。 系统还可以包括耦合到传感器平台的数据采集装置，以接收所测量的漂移特性并将其与接受标准进行比较，以便确定传感器的可接受性。 可以描述和要求保护其他实施例。
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公开(公告)号：US06970799B2
公开(公告)日：2005-11-29
申请号：US10678319
申请日：2003-10-02
CPC分类号： G01N15/0211
摘要： A method and apparatus provides for particle size detection. A particle detector signal is utilized to provide particle size information. The particle detection signal is obtained by utilizing particle detector information.
摘要翻译： 一种方法和装置提供粒度检测。 利用粒子检测器信号提供粒度信息。 通过利用粒子检测器信息获得粒子检测信号。
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公开(公告)号：US07532986B2
公开(公告)日：2009-05-12
申请号：US11220783
申请日：2005-09-06
IPC分类号： G01N31/00
CPC分类号： F24F11/30 , F24F2003/1642 , F24F2110/50
摘要： A plurality of particle size reference values are specified. Data are obtained based at least in part on the specified plurality of particle size reference values.
摘要翻译： 指定多个粒度参考值。 至少部分地基于指定的多个粒度参考值获得数据。
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4.发明授权Method and apparatus for establishing electrical contact between a wafer and a chuck 失效用于建立晶片和卡盘之间的电接触的方法和装置
公开(公告)号：US6121783A
公开(公告)日：2000-09-19
申请号：US839217
申请日：1997-04-22
IPC分类号： G01R31/28 , G01R31/312 , H01L21/66 , G01R31/02
CPC分类号： G01R31/2886 , G01R31/2831 , G01R31/312 , H01L22/14
摘要： A needle is pressed into the backside oxide of a semiconductor wafer and a voltage applied to the wafer greater than the breakdown voltage of the oxide in order to make an electrical contact with the bulk material of the wafer. A capacitor plate is provided proximate to a wafer on a chuck and a Kelvin probe is provided proximate to the wafer. A varying voltage is applied between the chuck and the capacitor plate and a voltage is monitored between the Kelvin probe and the chuck. The monitored voltage remaining constant indicates electrical contact between the chuck and the wafer.
摘要翻译： 将针压入半导体晶片的背面氧化物和施加到晶片的电压大于氧化物的击穿电压，以便与晶片的体材料电接触。 电容器板靠近卡盘上的晶片设置，开尔文探针靠近晶片设置。 在卡盘和电容器板之间施加变化的电压，并且在开尔文探针和卡盘之间监测电压。 监测电压保持恒定表示卡盘和晶片之间的电接触。
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公开(公告)号：US07016791B2
公开(公告)日：2006-03-21
申请号：US10678589
申请日：2003-10-02
CPC分类号： F24F11/30 , F24F2003/1642 , F24F2110/50
摘要： A plurality of particle size reference values are specified. Particle size data is obtained based at least in part on the specified plurality of particle size reference values.
摘要翻译： 指定多个粒度参考值。 至少部分地基于指定的多个粒度参考值获得粒度数据。
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公开(公告)号：US06091257A
公开(公告)日：2000-07-18
申请号：US32496
申请日：1998-02-26
CPC分类号： G01R31/2886
摘要： An apparatus for making and verifying electrical contact with the backside of a semiconductor wafer having a bulk portion covered with an insulating layer of oxide includes a contact probe, a wafer chuck having at least one probe vacuum groove and a probe aperture and a probe cylinder having a low pressure and a high pressure portion. The low pressure portion communicates with the probe vacuum groove and the probe aperture. The apparatus further includes a piston movably located between the low pressure and high pressure portions. The contact probe is attached to the piston and adapted to be protrudable from the probe aperture. The groove, aperture and low pressure portion are adapted to form a low pressure chamber with the wafer. The probe is urgeable to pierce the oxide and make electrical contact with the bulk portion of the wafer. The apparatus further includes a time-varying voltage source connectable between the chuck and the probe, and a current measuring device for measuring a current between the chuck and the probe. The probe is in electrical contact with the wafer if the current corresponds at least to a capacitive coupling between the chuck and the wafer.
摘要翻译： 用于制造和验证与半导体晶片的背面的电接触的装置，其具有覆盖有氧化物绝缘层的主体部分，包括接触探针，具有至少一个探针真空槽和探针孔的晶片卡盘和具有探针圆筒的探针圆筒， 低压和高压部分。 低压部分与探针真空槽和探针孔连通。 该装置还包括可移动地位于低压部分和高压部分之间的活塞。 接触探针连接到活塞并适于从探针孔突出。 槽，孔和低压部适于与晶片形成低压室。 该探针可以刺穿氧化物并与晶片的本体部分电接触。 该装置还包括可连接在卡盘和探针之间的时变电压源，以及用于测量卡盘和探针之间的电流的电流测量装置。 如果电流至少对应于卡盘和晶片之间的电容耦合，则探针与晶片电接触。
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公开(公告)号：US4546488A
公开(公告)日：1985-10-08
申请号：US480548
申请日：1983-03-30
IPC分类号： G01N23/223 , G01T1/36 , G01T1/40 , G01N23/20 , G01T1/17
CPC分类号： G01T1/40 , G01N23/223 , G01N2223/076
摘要： In an X-ray analysis apparatus, a pulse amplitude shift correction circuit is provided for producing correction signals which are a measure of pulse amplitude shifts and which are in response to the pulse amplitude shifts. This circuit provides automatic correction of pulse amplitude shifts so that the pulse amplifier of the device is controlled.
摘要翻译： 在X射线分析装置中，提供了脉冲幅度偏移校正电路，用于产生校正信号，该校正信号是脉冲幅度偏移的量度，并且响应于脉冲振幅偏移。 该电路提供脉冲幅度偏移的自动校正，从而控制器件的脉冲放大器。
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