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公开(公告)号：US12092656B2
公开(公告)日：2024-09-17
申请号：US17721522
申请日：2022-04-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sungyoon Ryu , Seungbum Hong , Kwangeun Kim , Hoon Kim , Jiwon Yeom , Seokjung Yun , Souk Kim , Younghoon Sohn , Yusin Yang
CPC classification number: G01R1/06727 , G01R1/04
Abstract: A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.
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12.发明授权公开(公告)号：US10482593B2
公开(公告)日：2019-11-19
申请号：US15626675
申请日：2017-06-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Younghoon Sohn , Yusin Yang
Abstract: An inspection method includes generating first layout data including information on a shape of a first pattern group, generating second layout data including information on a shape of a second pattern group, obtaining a target image including images of the first and second pattern groups, and detecting a defect pattern from the target image by comparing the first and second layout data with the target image. The first pattern group, the second pattern group, and the defect pattern are provided at different heights from each other, from a top surface of a substrate.
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13.发明申请公开(公告)号：US20190170563A1
公开(公告)日：2019-06-06
申请号：US16013199
申请日：2018-06-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sangkil Lee , Yusin Yang , Sung Yoon Ryu , Q-Han Park , Hyun Lee
Abstract: Disclosed are mass flow controllers, apparatuses for manufacturing semiconductor devices, and methods of maintenance thereof. The mass flow controller may control an amount of a gas provided into a chamber. The mass flow controller may be configured to obtain an absolute volume of the gas provided into the chamber at a standard flow rate when the mass flow controller is initially used. The mass flow controller may be configured to obtain a detected flow rate of the gas provided at a measured flow rate after the mass flow controller has been used for a predetermined time. The mass flow controller may be configured to compare the detected flow rate and the standard flow rate to verify a full-scale error in the measured flow rate.
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14.发明申请公开(公告)号：US20170200658A1
公开(公告)日：2017-07-13
申请号：US15366964
申请日：2016-12-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yusin Yang , Kang-Woong Ko , Sung Yoon Ryu , Gil-Woo Song , Sangkil Lee , Chungsam Jun , HyoungJo Jeon , Masahiro Horie
Abstract: A method of inspecting a substrate includes irradiating light onto a substrate that has experienced a first process, obtaining spectral data of the light reflected from the substrate, detecting a defect region of the substrate from the spectral data, and extracting a first defect site that occurred in or during the first process from the defect region. Extracting the first defect site includes establishing an effective area where the first process affects the substrate, and extracting a superimposed area that is overlapped with the effective area from the defect region. The superimposed area is defined as the first defect site.
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15.发明授权公开(公告)号：US11486834B2
公开(公告)日：2022-11-01
申请号：US16709222
申请日：2019-12-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Younghoon Sohn , Yusin Yang , Chihoon Lee
Abstract: Disclosed are a substrate inspection method and a method of fabricating a semiconductor device using the same. The inspection method may include measuring a target area of a substrate using a pulsed beam to obtain a first peak, measuring a near field ultrasound, which is produced by the pulsed beam in a near field region including the target area, using a first continuous wave beam different from the pulsed beam to obtain a second peak, and measuring a far field ultrasound, which is produced by the near field ultrasound in a far field region outside the near field region, using a second continuous wave beam to examine material characteristics of the substrate.
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Patent Agency Ranking
公开(公告)号：US11004712B2
公开(公告)日：2021-05-11
申请号：US16532920
申请日：2019-08-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Yoon Ryu , Joonseo Song , Souk Kim , Younghoon Sohn , Yusin Yang , Chihoon Lee
Abstract: Disclosed are methods of inspecting semiconductor wafers, inspection systems for performing the same, and methods of fabricating semiconductor devices using the same. A method of inspecting a semiconductor wafer including preparing a wafer including zones each having patterns, obtaining representative values for the patterns, scanning the patterns under an optical condition to obtain optical signals for the patterns, each of the optical signals including optical parameters, selecting a representative optical parameter that is one of the optical parameters that has a correlation with the representative values, obtaining a reference value of the representative optical parameter for a reference pattern, and obtaining a defect of an inspection pattern by comparing the reference value with an inspection value of the representative optical parameter for the inspection pattern.
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17.发明授权公开(公告)号：US10460436B2
公开(公告)日：2019-10-29
申请号：US15691958
申请日：2017-08-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Younghoon Sohn , Ilsoo Kim , Yusin Yang
IPC: G06T7/00 , H01L21/66 , H01L23/498 , H01L23/00
Abstract: Disclosed are an inspection method, an inspection system, and a method of fabricating a semiconductor package using the same. The inspection method comprises obtaining a reference value by measuring a surface profile of a reference pattern, scanning reference images of the reference pattern by using a plurality of optical inspection conditions, obtaining estimation values of the reference pattern that are measured from the reference images, selecting an desired optical inspection condition among the plurality of optical inspection conditions by comparing the reference value with the estimation values, scanning a target image of a target pattern by using the desired optical inspection condition, and obtaining an error value by quantitatively comparing the target image with a design image of the target pattern.
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公开(公告)号：US10269111B2
公开(公告)日：2019-04-23
申请号：US15597262
申请日：2017-05-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Joonseo Song , Sung Yoon Ryu , Wahseng Yap , Yunjung Jee , Yusin Yang , Chungsam Jun , Yoo Jin Jeoung , Jaehyung Ahn , Janghee Lee
IPC: G06T7/00
Abstract: A method of inspecting a semiconductor wafer is provided, the method includes scanning a plurality of inspection swaths on a wafer to obtain a plurality of image sets and producing a plurality of reference images from the plurality of image sets, respectively. The method of inspecting a semiconductor wafer further includes selecting a plurality of target images from the plurality of image sets, respectively. The method of inspecting a semiconductor wafer additionally includes comparing each reference image of the plurality of reference images with each target image of the plurality of target images to detect a defect image from each of the plurality of target images. A reference image being compared and a target image being compared are images scanned from the same inspection swath.
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公开(公告)号：US10088297B2
公开(公告)日：2018-10-02
申请号：US15464896
申请日：2017-03-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Yoon Ryu , Younghoon Sohn , Yusin Yang , Chungsam Jun , Yunjung Jee
Abstract: Disclosed are apparatuses and methods for measuring a thickness. The apparatus for measuring a thickness including a light source that emits a femto-second laser, an optical coupler through which a portion of the femto-second laser is incident onto a target and other portion of the femto-second laser is incident onto a reference mirror, a detector configured to receive a reflection signal reflected on the reference mirror and a sample signal generated from the target and configured to measure a thickness of the target based on an interference signal between the reflection signal and the sample signal, and a plurality of optical fiber lines configured to connect the light source, the optical coupler, and the detector to each other may be provided.
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公开(公告)号：US20180053292A1
公开(公告)日：2018-02-22
申请号：US15597262
申请日：2017-05-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Joonseo Song , Sung Yoon Ryu , Wahseng Yap , Yunjung Jee , Yusin Yang , Chungsam Jun , Yoo Jin Jeoung , Jaehyung Ahn , Janghee Lee
IPC: G06T7/00
CPC classification number: G06T7/001 , G06T2207/30148
Abstract: A method of inspecting a semiconductor wafer is provided, the method includes scanning a plurality of inspection swaths on a wafer to obtain a plurality of image sets and producing a plurality of reference images from the plurality of image sets, respectively. The method of inspecting a semiconductor wafer further includes selecting a plurality of target images from the plurality of image sets, respectively. The method of inspecting a semiconductor wafer additionally includes comparing each reference image of the plurality of reference images with each target image of the plurality of target images to detect a defect image from each of the plurality of target images. A reference image being compared and a target image being compared are images scanned from the same inspection swath.
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