公开(公告)号：US20210126130A1

公开(公告)日：2021-04-29

申请号：US16643453

申请日：2018-08-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshinobu ASAMI ,  Takahisa ISHIYAMA ,  Motomu KURATA ,  Ryo TOKUMARU ,  Noritaka ISHIHARA ,  Yusuke NONAKA

IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66

Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

公开(公告)号：US20190341495A1

公开(公告)日：2019-11-07

申请号：US16513826

申请日：2019-07-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yuhei SATO ,  Yasumasa YAMANE ,  Yoshitaka YAMAMOTO ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Yutaka OKAZAKI ,  Naoki OKUNO ,  Takahisa ISHIYAMA

IPC: H01L29/786 ,  H01L29/417

Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US20180151743A1

公开(公告)日：2018-05-31

申请号：US15865308

申请日：2018-01-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yuhei SATO ,  Yasumasa YAMANE ,  Yoshitaka YAMAMOTO ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Yutaka OKAZAKI ,  Naoki OKUNO ,  Takahisa ISHIYAMA

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/78696

Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US20160329434A1

公开(公告)日：2016-11-10

申请号：US15144123

申请日：2016-05-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daigo ITO ,  Takahisa ISHIYAMA ,  Katsuaki TOCHIBAYASHI ,  Kazuya HANAOKA

IPC: H01L29/786 ,  G11C13/00 ,  G06F1/06 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L21/67207 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/1464 ,  H01L29/045 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: The semiconductor device includes a first insulating layer; a first oxide insulating layer over the first insulating layer; an oxide semiconductor layer over the first oxide insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a second oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a gate insulating layer over the second oxide insulating layer; a gate electrode layer over the gate insulating layer; a second insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer; and a third insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, and the second insulating layer.

Abstract translation: 半导体器件包括第一绝缘层; 第一绝缘层上的第一氧化物绝缘层; 在所述第一氧化物绝缘层上的氧化物半导体层; 氧化物半导体层上的源电极层和漏电极层; 氧化物半导体层上的第二氧化物绝缘层，源电极层和漏电极层; 在所述第二氧化物绝缘层上的栅极绝缘层; 栅绝缘层上的栅电极层; 第一绝缘层上的第二绝缘层，源极电极层，漏极电极层，第二氧化物绝缘层，栅极绝缘层和栅极电极层; 以及第一绝缘层上的第三绝缘层，源极电极层，漏极电极层和第二绝缘层。