公开(公告)号：US20220059701A1

公开(公告)日：2022-02-24

申请号：US17501061

申请日：2021-10-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshinobu ASAMI ,  Takahisa ISHIYAMA ,  Motomu KURATA ,  Ryo TOKUMARU ,  Noritaka ISHIHARA ,  Yusuke NONAKA

IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66

Abstract: A semiconductor device with favorable reliability is provided.
The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

公开(公告)号：US20150243738A1

公开(公告)日：2015-08-27

申请号：US14626049

申请日：2015-02-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Takahisa ISHIYAMA ,  Kenichi OKAZAKI ,  Chiho KAWANABE ,  Masashi OOTA ,  Noritaka ISHIHARA

IPC: H01L29/24 ,  C01G15/00 ,  H01L27/12

CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

Abstract translation: 给半导体器件提供有利的电特性。 此外，提供了具有高可靠性的半导体器件。 本发明的一个实施方案是具有多个电子衍射图案的氧化物半导体膜，其以使得形成氧化物半导体膜的表面被照射电子束，该电子束的半峰宽为 1nm。 多个电子衍射图案包括在不同区域中观察到的50个以上的电子衍射图案，第一电子衍射图案的百分比和第二电子衍射图案的百分比之和占100％，第一电子衍射图案占 90％以上时，第一电子衍射图案包括观察点，其表示c轴在与形成氧化物半导体膜的表面基本垂直的方向上取向。

公开(公告)号：US20180138208A1

公开(公告)日：2018-05-17

申请号：US15794464

申请日：2017-10-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daigo ITO ,  Yutaka OKAZAKI ,  Takahisa ISHIYAMA

IPC: H01L27/12 ,  H01L27/115 ,  H01L29/786

Abstract: To provide a semiconductor device capable of retaining data for a long time. The semiconductor device includes a first transistor, an insulator covering the first transistor, and a second transistor over the insulator. The first transistor includes a first gate electrode, a second gate electrode overlapping with the first gate electrode, and a semiconductor between the first gate electrode and the second gate electrode. The first gate electrode is electrically connected to one of a source and a drain of the second transistor.

公开(公告)号：US20160197193A1

公开(公告)日：2016-07-07

申请号：US15068708

申请日：2016-03-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Takahisa ISHIYAMA ,  Kenichi OKAZAKI ,  Chiho KAWANABE ,  Masashi OOTA ,  Noritaka ISHIHARA

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12

CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

公开(公告)号：US20200105942A1

公开(公告)日：2020-04-02

申请号：US16703175

申请日：2019-12-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daigo ITO ,  Takahisa ISHIYAMA ,  Katsuaki TOCHIBAYASHI ,  Kazuya HANAOKA

IPC: H01L29/786 ,  H01L21/67 ,  H01L27/146 ,  H01L29/04 ,  H01L29/423 ,  H01L29/66 ,  H01L27/12

Abstract: The semiconductor device includes a first insulating layer; a first oxide insulating layer over the first insulating layer; an oxide semiconductor layer over the first oxide insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a second oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a gate insulating layer over the second oxide insulating layer; a gate electrode layer over the gate insulating layer; a second insulating layer over the first insulating layer the source electrode layer, the drain electrode layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer, and a third insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, and the second insulating layer.

公开(公告)号：US20180033892A1

公开(公告)日：2018-02-01

申请号：US15652299

申请日：2017-07-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasumasa YAMANE ,  Motomu KURATA ,  Ryota HODO ,  Takahisa ISHIYAMA

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/105 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L27/1052 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device having stable electrical characteristics is provided. Alternatively, a highly reliable semiconductor device suitable for miniaturization or high integration is provided. The semiconductor device includes a first barrier layer, a second barrier layer, a third barrier layer, a transistor including an oxide, an insulator, and a conductor. The insulator includes an oxygen-excess region. The insulator and the oxide are between the first barrier layer and the second barrier layer. The conductor is in an opening of the first barrier layer, an opening of the second barrier layer, and an opening of the insulator with the third barrier layer positioned therebetween.

公开(公告)号：US20170141233A1

公开(公告)日：2017-05-18

申请号：US15417266

申请日：2017-01-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Takahisa ISHIYAMA ,  Kenichi OKAZAKI ,  Chiho KAWANABE ,  Masashi OOTA ,  Noritaka ISHIHARA

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

公开(公告)号：US20170186779A1

公开(公告)日：2017-06-29

申请号：US15390894

申请日：2016-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daigo ITO ,  Takahisa ISHIYAMA ,  Katsuaki TOCHIBAYASHI ,  Yoshinori ANDO ,  Yasutaka SUZUKI ,  Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/49

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/7869 ,  H01L2224/05 ,  H01L2224/48463

Abstract: A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which includes an oxide semiconductor is provided. The transistor includes a first conductor, a first insulator, a second insulator, a third insulator, a first oxide, an oxide semiconductor, a second conductor, a second oxide, a fourth insulator, a third conductor, a fourth conductor, a fifth insulator, and a sixth insulator. The second conductor is separated from the sixth insulator by the second oxide. The third conductor and the fourth conductor are separated from the sixth insulator by the fifth insulator. The second oxide has a function of suppressing permeation of oxygen as long as oxygen contained in the sixth insulator is sufficiently supplied to the oxide semiconductor through the second oxide. The fifth insulator has a barrier property against oxygen.

公开(公告)号：US20160163870A1

公开(公告)日：2016-06-09

申请号：US14961016

申请日：2015-12-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daigo Ito ,  Takahisa ISHIYAMA ,  Kazuya HANAOKA

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/467 ,  H01L29/66 ,  H01L21/4763

CPC classification number: H01L29/7869 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/0228 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/467 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

Abstract: Provided is a semiconductor device which can suppress an increase in oxygen vacancies in an oxide semiconductor layer and a manufacturing method of the semiconductor device. The semiconductor device includes a first oxide semiconductor layer over the first insulating layer; a second oxide semiconductor layer over the first oxide semiconductor layer; a third oxide semiconductor layer over the second oxide semiconductor layer; a source electrode layer and a drain electrode layer each over the third oxide semiconductor layer; a fourth semiconductor layer over the source and drain electrode layers, and the third oxide semiconductor layer; a gate insulating layer over the fourth oxide semiconductor layer; a gate electrode layer over the gate electrode layer and overlapping with the source and drain electrode layers, and the fourth oxide semiconductor layer; and a second insulating layer over the first insulating layer, and the source, gate, and drain electrode layers.

Abstract translation: 提供一种能够抑制氧化物半导体层的氧空位增加的半导体装置及半导体装置的制造方法。 半导体器件包括在第一绝缘层上的第一氧化物半导体层; 在所述第一氧化物半导体层上的第二氧化物半导体层; 在所述第二氧化物半导体层上的第三氧化物半导体层; 每个在所述第三氧化物半导体层上的源电极层和漏电极层; 在源极和漏极电极层上的第四半导体层和第三氧化物半导体层; 在第四氧化物半导体层上的栅极绝缘层; 在栅电极层上方并与源电极层和漏电极层重叠的栅电极层和第四氧化物半导体层; 以及第一绝缘层上的第二绝缘层，以及源极，栅极和漏极电极层。

公开(公告)号：US20140284597A1

公开(公告)日：2014-09-25

申请号：US14208982

申请日：2014-03-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Takahisa ISHIYAMA ,  Masaki KOYAMA ,  Erumu KIKUCHI ,  Takuya HIROHASHI ,  Masashi OOTA

IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02678 ,  H01L21/02686 ,  H01L29/66969

Abstract: To improve crystallinity of an oxide semiconductor. To provide a crystalline oxide semiconductor film in which a crystallized region extends to the interface with a base or the vicinity of the interface, and to provide a method for forming the oxide semiconductor film. An oxide semiconductor film containing indium, gallium, and zinc is formed, and the oxide semiconductor film is irradiated with an energy beam, thereby being heated. Note that the oxide semiconductor film includes a c-axis aligned crystal region or microcrystal.

Abstract translation: 为了改善氧化物半导体的结晶度。 提供结晶化区域延伸到与基底或界面附近的界面的结晶氧化物半导体膜，并提供形成氧化物半导体膜的方法。 形成含有铟，镓和锌的氧化物半导体膜，并用能量束照射氧化物半导体膜，由此被加热。 注意，氧化物半导体膜包括c轴取向的晶体区域或微晶体。