公开(公告)号：US20250120128A1

公开(公告)日：2025-04-10

申请号：US18923776

申请日：2024-10-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Satoshi SHINOHARA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

公开(公告)号：US20250118973A1

公开(公告)日：2025-04-10

申请号：US18989638

申请日：2024-12-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: H02J7/00 ,  H01M10/42

Abstract: The versatility of a power feeding device is improved. A power storage system includes a power storage device and a power feeding device. The power storage device includes data for identifying the power storage device. The power storage device includes a power storage unit, a switch that controls whether power from the power feeding device is supplied to the power storage unit, and a control circuit having a function of controlling a conduction state of the switch in accordance with a control signal input from the power feeding device. The power feeding device includes a signal generation circuit having a function of identifying the power storage device by the data input from the power storage device, generating the control signal corresponding to the identified power storage device, and outputting the generated control signal to the power storage device.

公开(公告)号：US20250113711A1

公开(公告)日：2025-04-03

申请号：US18978174

申请日：2024-12-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kaoru HATANO ,  Satoshi SEO ,  Shunpei YAMAZAKI

IPC: H10K59/127 ,  H04M1/02 ,  H10K50/84 ,  H10K59/12 ,  H10K59/122 ,  H10K59/124 ,  H10K71/50 ,  H10K77/10 ,  H10K102/00

Abstract: The invention relates to: a light-emitting device which includes a first flexible substrate having a first electrode, a light-emitting layer over the first electrode, and a second electrode with a projecting portion over the light-emitting layer and a second flexible substrate having a semiconductor circuit and a third electrode electrically connected to the semiconductor circuit, in which the projecting portion of the second electrode and the third electrode are electrically connected to each other; a method for manufacturing the light-emitting device; and a cellular phone which includes a housing incorporating the light-emitting device and having a longitudinal direction and a lateral direction, in which the light-emitting device is disposed on a front side and in an upper portion in the longitudinal direction of the housing.

公开(公告)号：US20250107239A1

公开(公告)日：2025-03-27

申请号：US18974962

申请日：2024-12-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L21/02 ,  H01L27/146 ,  H01L29/04 ,  H01L29/08 ,  H01L29/24 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786 ,  H10B41/70

Abstract: A region containing a high proportion of crystal components and a region containing a high proportion of amorphous components are formed separately in one oxide semiconductor film. The region containing a high proportion of crystal components is formed so as to serve as a channel formation region and the other region is formed so as to contain a high proportion of amorphous components. It is preferable that an oxide semiconductor film in which a region containing a high proportion of crystal components and a region containing a high proportion of amorphous components are mixed in a self-aligned manner be formed. To separately form the regions which differ in crystallinity in the oxide semiconductor film, first, an oxide semiconductor film containing a high proportion of crystal components is formed and then process for performing amorphization on part of the oxide semiconductor film is conducted.

公开(公告)号：US20250081629A1

公开(公告)日：2025-03-06

申请号：US18818925

申请日：2024-08-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryota HODO ,  Shinya SASAGAWA ,  Motomu KURATA ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L21/02

Abstract: A semiconductor device that operates at high speed is provided. The semiconductor device is fabricated in the following manner: a first coating film over a first insulator and a second coating film over the first coating film are formed; a first layer is formed by partly removing the second coating film; a second layer is formed by partly removing the first coating film using the first layer as a mask; heat treatment is performed; a first oxide semiconductor is formed to cover a top surface of the first insulator, a side surface of the second layer, and a side surface and a top surface of the first layer; a second oxide semiconductor is formed in contact with the side surface of the second layer by processing the first oxide semiconductor by anisotropic etching; the first layer is removed; and a side surface of the second oxide semiconductor that is covered with the second layer is exposed by removing the second layer.

公开(公告)号：US20250081619A1

公开(公告)日：2025-03-06

申请号：US18951904

申请日：2024-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786

Abstract: A highly flexible display device and a method for manufacturing the display device are provided. A transistor including a light-transmitting semiconductor film, a capacitor including a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, and a first insulating film covering the semiconductor film are formed over a flexible substrate. The capacitor includes a region where the first electrode and the dielectric film are in contact with each other, and the first insulating film does not cover the region.

公开(公告)号：US20250076932A1

公开(公告)日：2025-03-06

申请号：US18905374

申请日：2024-10-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiharu HIRAKATA ,  Hiroyuki MIYAKE ,  Seiko INOUE ,  Shunpei YAMAZAKI

IPC: G06F1/16 ,  G06F3/041

Abstract: A display device with low power consumption is provided. Furthermore, a display device in which an image is displayed in a region that can be used in a folded state is provided. The conceived display device includes a display portion that can be opened and folded, a sensing portion that senses a folded state of the display portion, and an image processing portion that generates, when the display portion is in the folded state, an image in which a black image is displayed in part of the display portion.

公开(公告)号：US20250076697A1

公开(公告)日：2025-03-06

申请号：US18954090

申请日：2024-11-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yoshiharu Hirakata ,  Tetsuji ISHITANI ,  Daisuke KUBOTA ,  Ryo HATSUMI ,  Masaru NAKANO ,  Takashi HAMADA

IPC: G02F1/1333 ,  G02F1/1335 ,  G02F1/1362

Abstract: A display device including a peripheral circuit portion with high operation stability. The display device includes a first substrate and a second substrate. A first insulating layer is on a first plane of the first substrate, and a second insulating layer is on a first plane of the second substrate. An area of the first plane of the first substrate is the same as an area of the first plane of the second substrate. The first plane of the first substrate and the first plane of the second substrate face each other. A bonding layer is between the first insulating layer and the second insulating layer. A protection film is in contact with the first substrate, the first insulating layer, the bonding layer, the second insulating layer, and the second substrate.

公开(公告)号：US20250056837A1

公开(公告)日：2025-02-13

申请号：US18928429

申请日：2024-10-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/10 ,  H01L29/45 ,  H10K59/121

Abstract: A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.

公开(公告)号：US20250056786A1

公开(公告)日：2025-02-13

申请号：US18723731

申请日：2022-12-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Ryota HODO ,  Tatsuya ONUKI ,  Kiyoshi KATO

IPC: H10B12/00

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor; the transistor includes an oxide, a first conductor and a second conductor over the oxide, a first insulator that is placed over the first conductor and the second conductor and includes a first opening and a second opening, a second insulator in the first opening of the first insulator, and a third conductor over the second insulator; the first opening in the first insulator includes a region overlapping with the oxide; the third conductor includes a region overlapping with the oxide with the second insulator therebetween; the capacitor includes the second conductor, a third insulator in the second opening of the first insulator, and a fourth conductor over the third insulator; and the distance between the first conductor and the second conductor is smaller than the width of the first opening in a cross-sectional view of the transistor in a channel length direction.