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公开(公告)号：US20180219130A1
公开(公告)日：2018-08-02
申请号：US15936321
申请日：2018-03-26
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
CPC classification number: H01L33/36 , H01L33/08 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/42 , H01L33/46 , H01L33/62
Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
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公开(公告)号：US09905729B2
公开(公告)日：2018-02-27
申请号：US15354928
申请日：2016-11-17
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Mae Yi Kim , Jin Woong Lee , Yeo Jin Yoon , Seom Geun Lee , Yong Woo Ryu , Keum Ju Lee
Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.
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公开(公告)号：US20150236210A1
公开(公告)日：2015-08-20
申请号：US14630273
申请日：2015-02-24
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
CPC classification number: H01L33/387 , H01L33/0008 , H01L33/10 , H01L33/20 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0066
Abstract: Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer, a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer, a second electrode pad electrically connected to the second conductive type semiconductor layer, and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
Abstract translation: 本文公开在包括电极焊盘的LED芯片中。 LED芯片包括：第一导电型半导体层，第一导电类型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠， 位于与第二导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘，从第一电极焊盘延伸并连接到第一导电类型半导体层的第一电极延伸部，与第二导电类型半导体层电连接的第二电极焊盘 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。
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公开(公告)号：US10608141B2
公开(公告)日：2020-03-31
申请号：US15936321
申请日：2018-03-26
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
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公开(公告)号：US10193017B2
公开(公告)日：2019-01-29
申请号：US15905224
申请日：2018-02-26
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Mae Yi Kim , Jin Woong Lee , Yeo Jin Yoon , Seom Geun Lee , Yong Woo Ryu , Keum Ju Lee
Abstract: A light emitting diode includes a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.
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Patent Agency Ranking
公开(公告)号：US20180190864A1
公开(公告)日：2018-07-05
申请号：US15905224
申请日：2018-02-26
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Mae Yi Kim , Jin Woong Lee , Yeo Jin Yoon , Seom Geun Lee , Yong Woo Ryu , Keum Ju Lee
Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.
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公开(公告)号：US09929314B2
公开(公告)日：2018-03-27
申请号：US15336510
申请日：2016-10-27
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
CPC classification number: H01L33/36 , H01L33/08 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/42 , H01L33/46 , H01L33/62
Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
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公开(公告)号：US20160380157A1
公开(公告)日：2016-12-29
申请号：US15263000
申请日：2016-09-12
Applicant: Seoul Viosys Co., Ltd.
Inventor： Duk Il SUH , Jae Moo Kim , Kyoung Wan Kim , Yeo Jin Yoon , Ye Seul Kim , Sang Hyun Oh , Jin Woong Lee
CPC classification number: H01L33/46 , H01L33/10 , H01L33/38 , H01L33/42 , H01L33/50 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
Abstract: A light-emitting diode (LED) includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The LED includes a first distributed Bragg reflector arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector including a first laminate structure including alternately stacked SiO2 and Nb2O5 layers. The first laminate structure of the first distributed Bragg reflector is configured to reflect at least 90% of a first wavelength range of blue light emitted from the light emitting structure.
Abstract translation: 发光二极管（LED）包括布置在基板的第一表面上的发光结构，所述发光结构包括第一导电型半导体层; 第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层。 所述LED包括布置在所述基板的与所述第一表面相对的第二表面上的第一分布式布拉格反射器，所述第一分布布拉格反射器包括包括交替堆叠的SiO 2和Nb 2 O 5层的第一层压结构。 第一分布式布拉格反射器的第一层压结构被配置为反射从发光结构发射的蓝色光的第一波长范围的至少90％。
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公开(公告)号：US09520536B2
公开(公告)日：2016-12-13
申请号：US14984829
申请日：2015-12-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
CPC classification number: H01L33/36 , H01L33/08 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/42 , H01L33/46 , H01L33/62
Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
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公开(公告)号：US20160118564A1
公开(公告)日：2016-04-28
申请号：US14984829
申请日：2015-12-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Keum Ju Lee , Jin Woong Lee , Da Yeon Jeong , Sang Won Woo
CPC classification number: H01L33/36 , H01L33/08 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/42 , H01L33/46 , H01L33/62
Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
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