SUBSTRATE TREATMENT DEVICE
    11.
    发明申请

    公开(公告)号:US20210276055A1

    公开(公告)日:2021-09-09

    申请号:US17181227

    申请日:2021-02-22

    Abstract: According to one embodiment, a substrate treatment device includes a placement stand configured to rotate a substrate, a cooling part configured to supply a cooling gas into a space between the placement stand and the substrate, a liquid supplier configured to supply a liquid on a surface of the substrate opposite to the placement stand side, a detector configured to detect a state of the liquid on the surface of the substrate, and a controller controlling at least one of a rotation speed of the substrate, a flow rate of the cooling gas, or a supply amount of the liquid. The controller sets the liquid on the surface of the substrate to be in a supercooled state, obtains a temperature of the liquid in the supercooled state at a start of freezing, and is configured to calculate a removal ratio of a contamination.

    SUBSTRATE TREATMENT DEVICE
    14.
    发明申请

    公开(公告)号:US20220270914A1

    公开(公告)日:2022-08-25

    申请号:US17665657

    申请日:2022-02-07

    Abstract: A substrate treatment device according to an embodiment includes a placement part that includes a placement platform on which a substrate is placeable and that is configured to rotate the placed substrate, a cooling nozzle configured to supply a cooling gas to a space between the placement platform and the substrate, a liquid supplier configured to supply a liquid to a surface of the substrate opposite to the placement platform side, and a dispersion plate located at a discharge side of the cooling gas of the cooling nozzle. The dispersion plate includes a first hole extending through the dispersion plate in a thickness direction. The first hole is located at a position overlapping a central axis of the cooling nozzle when viewed along a direction along the central axis of the cooling nozzle.

    COOLING DEVICE, SUBSTRATE TREATMENT DEVICE, COOLING METHOD, AND SUBSTRATE TREATMENT METHOD

    公开(公告)号:US20210366739A1

    公开(公告)日:2021-11-25

    申请号:US17321639

    申请日:2021-05-17

    Inventor: Kensuke DEMURA

    Abstract: According to one embodiment, a cooling device includes a flow path configured to flow a refrigerant, a condenser provided in the flow path, a heat exchanger provided in the flow path, a compressor provided in the flow path between the condenser and the heat exchanger, a cooler cooling the refrigerant flowing from the condenser into the heat exchanger, a gas cooling part supplying a gas to the heat exchanger, and configured to cool the gas by exchanging heat with the refrigerant, a first thermometer configured to detect a temperature of the cooled gas, a second thermometer configured to detect a temperature of the refrigerant flowing into the heat exchanger, and a first controller configured to control the temperature of the cooled refrigerant flowing into the heat exchanger by the cooler. The first controller controls the temperature of the cooled refrigerant by switching a first control and a second control.

    SUBSTRATE TREATMENT DEVICE
    16.
    发明申请

    公开(公告)号:US20210299713A1

    公开(公告)日:2021-09-30

    申请号:US17195924

    申请日:2021-03-09

    Abstract: According to one embodiment, q substrate treatment device includes a placement stand, a plurality of support portions, a cooling part, a liquid supplier, and at least one protrusion. The placement stand has a plate shape, and is configured to rotate. The support portions are provided on one surface of the placement stand and configured to support a substrate. The cooling part is configured to supply a cooling gas into a space between the placement stand and a back surface of the substrate supported by the support portions. The liquid supplier is configured to supply a liquid onto a surface of the substrate. At least one protrusion is provided on the one surface of the placement stand and extends along a boundary line of a region where the substrate is provided in a plan view.

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    17.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
    等离子体加工设备和等离子体处理方法

    公开(公告)号:US20130256270A1

    公开(公告)日:2013-10-03

    申请号:US13847130

    申请日:2013-03-19

    CPC classification number: H05H1/46 H01J37/32623 H01J37/32715 H01J37/32724

    Abstract: According to one embodiment, a plasma processing apparatus includes: a processing chamber; a decompression section configured to decompress inside of the processing chamber; a member including a control section to be inserted into a depression provided on mounting side of a workpiece, the control section being configured to thereby control at least one of in-plane distribution of capacitance of a region including the workpiece and in-plane distribution of temperature of the workpiece; a mounting section provided inside the processing chamber; a plasma generating section configured to supply electromagnetic energy to a region for generating a plasma for performing plasma processing on the workpiece; and a gas supply section configured to supply a process gas to the region for generating a plasma. The control section performs control so that at least one of the in-plane distribution of capacitance and the in-plane distribution of temperature is made uniform.

    Abstract translation: 根据一个实施例,等离子体处理装置包括:处理室; 减压部,其构造成在所述处理室内减压; 包括插入到设置在工件的安装侧的凹部中的控制部的构件,所述控制部被构造成能够控制包括所述工件的区域的电容的面内分布和面内分布中的至少一个 工件温度; 设置在处理室内部的安装部; 等离子体产生部,被配置为向用于产生用于对所述工件进行等离子体处理的等离子体的区域提供电磁能; 以及气体供给部,其构造成将处理气体供给到用于产生等离子体的区域。 控制部进行控制,使得电容的平面内分布和温度的面内分布中的至少一个均匀。

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