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公开(公告)号:US10515988B2
公开(公告)日:2019-12-24
申请号:US15551129
申请日:2016-02-12
Applicant: SONY CORPORATION
Inventor: Hiroshi Tayanaka , Kentaro Akiyama , Yorito Sakano , Takashi Oinoue , Yoshiya Hagimoto , Yusuke Matsumura , Naoyuki Sato , Yuki Miyanami , Yoichi Ueda , Ryosuke Matsumoto
IPC: H01L27/146 , H01L27/14 , H04N5/374 , H04N5/217 , H04N5/235 , H04N5/355 , H04N5/367 , H04N5/378 , H04N5/3745 , H01L27/02
Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part. The first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type.
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12.
公开(公告)号:US20190214419A9
公开(公告)日:2019-07-11
申请号:US15722960
申请日:2017-10-02
Applicant: SONY CORPORATION
Inventor: Hiroshi Tayanaka , Yuuji Inoue , Masashi Nakata
IPC: H01L27/146
CPC classification number: H01L27/14621 , H01L27/14605 , H01L27/14623 , H01L27/14627 , H01L27/14634 , H01L27/14656 , H01L27/14685
Abstract: A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.
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公开(公告)号:US20130234220A1
公开(公告)日:2013-09-12
申请号:US13756124
申请日:2013-01-31
Applicant: SONY CORPORATION
Inventor: Hiroshi Tayanaka , Susumu Ooki , Junichi Furukawa , Fumiaki Okazaki
IPC: H01L31/0232
CPC classification number: H01L31/0232 , H04N5/2254 , H04N5/37457
Abstract: An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens.
Abstract translation: 成像装置包括具有两个或更多个共享浮动扩散的像素的基本单元。 成像装置还包括由基本单元中的两个或更多像素共享的并且布置在两个或更多个像素的外侧上的晶体管。 成像装置还包括光接收单元,其通过传送门连接到基本单元中的像素共享的浮动扩散。 在成像装置中,片上透镜基本上以规则的间隔布置。 此外,形成光波导,使得其在固态成像装置的表面中的位置位于从光接收单元的中心偏移到晶体管和光接收单元的内部的位置,并且 片内镜头内。
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