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公开(公告)号:US11616025B2
公开(公告)日:2023-03-28
申请号:US17126621
申请日:2020-12-18
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoungHee Park , JinHee Jung , OMin Kwon , JiWon Lee , YuJeong Jang
IPC: H01L23/552 , H01L23/00 , H01L21/56 , H01L21/033 , H01L23/31
Abstract: A semiconductor device has a semiconductor package including a substrate comprising a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A fanged metal mask is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The fanged metal mask is removed after forming the shielding layer.
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公开(公告)号:US20220384360A1
公开(公告)日:2022-12-01
申请号:US17817461
申请日:2022-08-04
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi , JiWon Lee
Abstract: A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.
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13.
公开(公告)号:US20220367381A1
公开(公告)日:2022-11-17
申请号:US17317082
申请日:2021-05-11
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , JinHee Jung , JiWon Lee , YuJeong Jang
IPC: H01L23/552 , H05K1/02 , H01L21/56 , H01L23/532
Abstract: A semiconductor device has a substrate and electrical components disposed over the substrate. An encapsulant is disposed over the substrate and electrical components. A multi-layer shielding structure is formed over the encapsulant. The multi-layer shielding structure has a first layer of ferromagnetic material and second layer of a protective layer or conductive layer. The ferromagnetic material can be iron, nickel, nickel iron alloy, iron silicon alloy, silicon steel, nickel iron molybdenum alloy, nickel iron molybdenum copper alloy, iron silicon aluminum alloy, nickel zinc, manganese zinc, other ferrites, amorphous magnetic alloy, amorphous metal alloy, or nanocrystalline alloy. The first layer can be a single, homogeneous material. The protective layer can be stainless steel, tantalum, molybdenum, titanium, nickel, or chromium. The conductive layer can be copper, silver, gold, or aluminum. The multi-layer shielding structure protects the electrical components from low frequency and high frequency interference.
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公开(公告)号:US20220310408A1
公开(公告)日:2022-09-29
申请号:US17806924
申请日:2022-06-14
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoungHee Park , JinHee Jung , OMin Kwon , JiWon Lee , YuJeong Jang
IPC: H01L21/48 , H01L23/552 , H01L21/683 , H01L23/498 , H01L23/31 , H01L23/544
Abstract: A semiconductor device has a semiconductor package including a substrate with a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A metal mask having a fiducial marker is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The metal mask is removed after forming the shielding layer.
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公开(公告)号:US20210118810A1
公开(公告)日:2021-04-22
申请号:US17136197
申请日:2020-12-29
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi , JiWon Lee
IPC: H01L23/552 , H01L21/311 , H01L21/56 , H01L23/31 , H01L23/00 , H01L23/66
Abstract: A semiconductor device has a substrate. An electrical component is disposed over a surface of the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the surface of the substrate remains exposed from the encapsulant. A shielding layer is formed over the encapsulant. A portion of the shielding layer is removed to expose the portion of the surface of the substrate.
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公开(公告)号:US12266615B2
公开(公告)日:2025-04-01
申请号:US18174790
申请日:2023-02-27
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoungHee Park , JinHee Jung , OMin Kwon , JiWon Lee , YuJeong Jang
IPC: H01L23/552 , H01L21/033 , H01L21/56 , H01L23/00 , H01L23/31
Abstract: A semiconductor device has a semiconductor package including a substrate comprising a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A fanged metal mask is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The fanged metal mask is removed after forming the shielding layer.
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公开(公告)号:US12211804B2
公开(公告)日:2025-01-28
申请号:US18429080
申请日:2024-01-31
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi , JiWon Lee
Abstract: A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.
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18.
公开(公告)号:US20230369241A1
公开(公告)日:2023-11-16
申请号:US18359688
申请日:2023-07-26
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , JinHee Jung , JiWon Lee , YuJeong Jang
IPC: H01L23/552 , H01L23/31 , H01L25/065 , H01L21/3213
CPC classification number: H01L23/552 , H01L23/3107 , H01L25/0655 , H01L21/32131
Abstract: A semiconductor device is formed by providing a semiconductor package including a shielding layer and forming a slot in the shielding layer using a laser. The laser is turned on and exposed to the shielding layer with a center of the laser disposed over a first point of the shielding layer. The laser is moved in a loop while the laser remains on and exposed to the shielding layer. Exposure of the laser to the shielding layer is stopped when the center of the laser is disposed over a second point of the shielding layer. A distance between the first point and the second point is approximately equal to a radius of the laser.
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19.
公开(公告)号:US20230215721A1
公开(公告)日:2023-07-06
申请号:US17647040
申请日:2022-01-05
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , JinHee Jung , YuJeong Jang , JiWon Lee
CPC classification number: H01L21/02057 , H01L21/67028 , B08B5/02 , B08B15/02 , B08B5/04
Abstract: A semiconductor manufacturing equipment has a support platform and a substrate disposed over the support platform. A first electrical component is disposed over a first surface of the substrate. A second electrical component is disposed over a second surface of the substrate opposite the first surface of the substrate. A suction hood is disposed over the substrate. A gas is introduced over the substrate to circulate residue while drawing the residue vertically into the suction hood. The gas can be introduced with a gas nozzle or air knife. The gas can be introduced from a gas conduit disposed at least partially around the substrate. The gas conduit can extend completely around the substrate. The gas nozzles are sequentially placed around the gas conduit. The gas can be a stable or inert gas. The residue is displaced away from the second electrical component.
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公开(公告)号:US11664327B2
公开(公告)日:2023-05-30
申请号:US16950295
申请日:2020-11-17
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: HunTeak Lee , KyungHwan Kim , HeeSoo Lee , ChangOh Kim , KyoungHee Park , JinHee Jung , OMin Kwon , JiWon Lee , YuJeong Jang
IPC: H01L23/552 , H01L21/56 , H01L23/498
CPC classification number: H01L23/552 , H01L21/56 , H01L21/561 , H01L21/568 , H01L23/49822
Abstract: A semiconductor package has a substrate, a first component disposed over the substrate, an encapsulant deposited over the first component, and a second component disposed over the substrate outside the encapsulant. A metal mask is disposed over the second component. A shielding layer is formed over the semiconductor package. The metal mask after forming the shielding layer. The shielding layer is optionally formed on a contact pad of the substrate while a conic area above the contact pad that extends 40 degrees from vertical remains free of the encapsulant and metal mask while forming the shielding layer. Surfaces of the metal mask and encapsulant oriented toward the contact pad can be sloped. The metal mask can be disposed and removed using a pick-and-place machine.
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