公开(公告)号：US11670730B2

公开(公告)日：2023-06-06

申请号：US16573941

申请日：2019-09-17

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/107 ,  H01L31/022416 ,  H01L31/18

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

公开(公告)号：US11049990B2

公开(公告)日：2021-06-29

申请号：US16535026

申请日：2019-08-07

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino ,  Antonella Sciuto

IPC: H01L31/12 ,  H01L33/06 ,  H01L31/18 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12 ,  H01L31/107 ,  H01L31/0376 ,  H01L33/34

Abstract: An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

公开(公告)号：US20180284090A1

公开(公告)日：2018-10-04

申请号：US15782626

申请日：2017-10-12

Applicant: STMicroelectronics S.R.L. ,  Consiglio Nazionale delle Ricerche - CNR

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto

IPC: G01N33/00 ,  G01N21/84 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/101

CPC classification number: G01N33/0047 ,  G01N21/251 ,  G01N21/255 ,  G01N21/31 ,  G01N21/33 ,  G01N21/8422 ,  G01N27/4141 ,  G01N33/0031 ,  G01N33/0067 ,  H01L27/1443 ,  H01L31/02024 ,  H01L31/02327 ,  H01L31/1013 ,  H01L31/103

Abstract: An optoelectronic device for detecting volatile organic compounds is described, including a die with a semiconductor body, the die forming a MOSFET transistor and at least one photodiode. The optoelectronic device is optically couplable to an optical source that emits radiation with a spectrum at least partially overlapping the absorption spectrum range of the semiconductor body. The MOSFET transistor is planar and includes a gate region and a catalytic region that is arranged on the gate region such that, in the presence of a gas mixture including volatile organic compounds, the MOSFET transistor can be biased to generate an electrical signal indicating the overall concentration of the gas mixture. The photodiode generates a photocurrent that is a function of the concentration of one or more polycyclic aromatic hydrocarbons present in the gas mixture.

公开(公告)号：US09933301B2

公开(公告)日：2018-04-03

申请号：US14960131

申请日：2015-12-04

Applicant: STMicroelectronics S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Paolo Badalà

IPC: G01J1/42 ,  H01L27/146 ,  H01L31/101 ,  H01L31/108

CPC classification number: G01J1/429 ,  H01L27/14621 ,  H01L27/14683 ,  H01L31/1013 ,  H01L31/108

Abstract: An integrated electronic device for detecting the composition of ultraviolet radiation includes a cathode region formed by a semiconductor material with a first type of conductivity. A first anode region and a second anode region are laterally staggered with respect to one another and are set in contact with the cathode region. The cathode region and the first anode region form a first sensor. The cathode region and the second anode region form a second sensor. In a spectral range formed by the UVA band and by the UVB band, the first and second sensors have, respectively, a first spectral responsivity and a second spectral responsivity different from one another.

公开(公告)号：US11133424B2

公开(公告)日：2021-09-28

申请号：US16509040

申请日：2019-07-11

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo Mazzillo ,  Pietro Paolo Barbarino ,  Domenico Pierpaolo Mello ,  Antonella Sciuto

IPC: H01L31/0216 ,  H01L31/107 ,  H01L31/16 ,  H01L33/38

Abstract: An optical sensor includes a light-emitter device formed in a body of solid-state material with wide band gap having a surface. The light-emitter device includes a cathode region having a first conductivity type and an anode region having a second conductivity type. The anode region extends into the cathode region from the surface of the body. The anode region and the cathode region define a junction, and the cathode region has, near the junction, a peak defectiveness area accommodating vacancies in the crystalline structure due to non-bound ions or atoms of Group IV or VIII of the periodic table, which may include carbon, silicon, helium, argon, or neon. The vacancies are at a higher concentration with respect to mean values of vacancies in the anode region and in the cathode region. For example, the vacancies in the peak defectiveness area have a concentration of at least 1013 atoms/cm−3.

公开(公告)号：US20200052147A1

公开(公告)日：2020-02-13

申请号：US16535026

申请日：2019-08-07

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino ,  Antonella Sciuto

IPC: H01L31/12 ,  H01L33/06 ,  H01L31/18 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12 ,  H01L31/107 ,  H01L31/0376 ,  H01L33/34

Abstract: An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

公开(公告)号：US20200013915A1

公开(公告)日：2020-01-09

申请号：US16573941

申请日：2019-09-17

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/18

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

公开(公告)号：US10371572B2

公开(公告)日：2019-08-06

申请号：US15900049

申请日：2018-02-20

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Paolo Badalà

IPC: G01J1/42 ,  H01L27/146 ,  H01L31/101 ,  H01L31/108

Abstract: An integrated electronic device for detecting the composition of ultraviolet radiation includes a cathode region formed by a semiconductor material with a first type of conductivity. A first anode region and a second anode region are laterally staggered with respect to one another and are set in contact with the cathode region. The cathode region and the first anode region form a first sensor. The cathode region and the second anode region form a second sensor. In a spectral range formed by the UVA band and by the UVB band, the first and second sensors have, respectively, a first spectral responsivity and a second spectral responsivity different from one another.

公开(公告)号：US10209125B2

公开(公告)日：2019-02-19

申请号：US15920200

申请日：2018-03-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto

IPC: H01L31/107 ,  G01J1/42 ,  H01L31/0224 ,  H01L31/0312 ,  H01L31/0352 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/02 ,  H01L31/18 ,  F23N5/08 ,  G01J5/00 ,  H01L31/103 ,  H01L31/09 ,  G01J5/20 ,  H01L27/146

Abstract: A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.

公开(公告)号：US20170098730A1

公开(公告)日：2017-04-06

申请号：US15140880

申请日：2016-04-28

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/107 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/107 ,  H01L31/022416 ,  H01L31/18

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.