Abstract:
A programmable-gain amplifier includes: two complementary cross-coupled transistor pairs mutually coupled with each transistor in one pair having a current flow path cascaded with a current flow path of a respective one of the transistors in the other pair. First and second coupling points are formed between the pairs; with first and second sampling capacitors coupled thereto. First and second input stages have input terminals to input signals for sampling by the first and second sampling capacitors. Switching means couple the first and second input stages to the sampling capacitors so the input signals are sampled as sampled signals on the sampling capacitors. The switching means energizes the complementary cross-coupled transistor pairs so the signals sampled on the sampling capacitors undergo negative resistance regeneration growing exponentially over time to thereby provide an exponential amplifier gain.
Abstract:
A differentiator generates a time derivative signal from a time-variable signal. A transconductance amplifier generates a biasing control signal as a function of the time derivative signal. A supply network functions to supply the differentiator and transconductance amplifier. The supply network is driven by the biasing control signal output from the transconductance amplifier. With this configuration, speed of operation of the differentiator and transconductance amplifier vary with the supply provided by the supply network, and the supply is modulated as a function of the received time-variable signal.
Abstract:
A package for a device to be inserted into a solid structure may include a building material that includes particles of one of micrometric and sub-micrometric dimensions. The device may include an integrated detection module having at least one integrated sensor and the package arranged to coat at least one portion of the device including the integrated detection module. A method aspect includes a method of manufacturing the device. A system aspect is for monitoring parameters in a solid structure that includes the device.
Abstract:
An electromechanical memory element includes a fixed body and a deformable element attached to the fixed body. An actuator causes a deformation of the deformable element from a first position (associated with a first logic state) to a second position (associated with a second logic state) where a mobile element makes contact with a fixed element. A programming circuit then causes a weld to be formed between the mobile element and the fixed element. The memory element is thus capable of associating the first and second positions with two different logic states. The weld may be selectively dissolved to return the deformable element back to the first position.
Abstract:
In accordance with an embodiment, an envelope detector includes a first transistor having a first current conduction terminal coupled to a first connection node; a second current conduction terminal coupled to an intermediate node; and a control terminal coupled the signal input node and to a biasing node; a second transistor having a first current conduction terminal coupled to the intermediate node; a second current conduction terminal coupled to a second connection node; and a control terminal coupled to the biasing node; and a first temperature compensating transistor that is diode-connected and coupled between a compensation output node and the biasing node. The second connection node is coupled to the compensation output node and the first connection node is coupled to a detector output.
Abstract:
A MEMS device includes a fixed supporting body forming a cavity, a mobile element suspended over the cavity, and an elastic element arranged between the fixed supporting body and the mobile element. First, second, third, and fourth piezoelectric elements are mechanically coupled to the elastic element, which has a shape symmetrical with respect to a direction. The first and second piezoelectric elements are arranged symmetrically with respect to the third and fourth piezoelectric elements, respectively. The first and fourth piezoelectric elements are configured to receive a first control signal, whereas the second and third piezoelectric elements are configured to receive a second control signal, which is in phase opposition with respect to the first control signal so that the first, second, third, and fourth piezoelectric elements deform the elastic element, with consequent rotation of the mobile element about the direction.
Abstract:
A magnetic field sensor formed by a Hall cell having a first, second, third and fourth conduction nodes electrically coupled together by resistive paths. Flowing between the first and second conduction nodes is a control current. In the presence of a magnetic field, a difference of potential due to the Hall effect is generated between the third and fourth conduction nodes. An operational amplifier has an inverting input terminal coupled to the fourth conduction node, a non-inverting input terminal biased at the voltage at the third conduction node, and an output terminal coupled in feedback mode to the inverting input by a feedback resistor. The current generated in feedback through the feedback resistor generates a voltage indicating unbalancing, due to the Hall effect, between the third and fourth conductive nodes, and consequently indicates the intensity of the magnetic field that acts upon the Hall cell.
Abstract:
A low voltage isolation switch is suitable for receiving from a connection node a high voltage signal and transmitting said high voltage signal to a load via a connection terminal. The isolation switch includes a driving block connected between first and second voltage reference terminals and including a first driving transistor coupled between the first voltage reference (Vss) and a first driving circuit node and a second driving transistor coupled between the driving circuit node and the second supply voltage reference. The switch comprises an isolation block connected to the connection terminal (pzt), the connection node, and the driving central circuit node and including a voltage limiter block, a diode block and a control transistor. The control transistor is connected across the diode block between the connection node and the connection terminal and has a control terminal connected to the driving central circuit node.
Abstract:
In one example, a circuit includes a first node to receive an analog signal that is an amplitude modulated radio-frequency signal for a digital signal. An output node is configured to provide an output signal indicative of rising and falling edges of an envelope of the analog signal. The rising and falling edges are indicative of rising and falling edges of the digital signal. A first current path is disposed between a power supply node and the first node. The first current path includes a first transistor coupled between the first node and a first bias source. The first bias source is coupled between the first transistor and the power supply node. The output node is coupled to a first intermediate node in the first current path between the transistor and the first bias source. A control terminal of the first transistor is coupled to the output node via a feedback network.
Abstract:
A magnetic field sensor formed by a Hall cell having a first, second, third and fourth conduction nodes electrically coupled together by resistive paths. Flowing between the first and second conduction nodes is a control current. In the presence of a magnetic field, a difference of potential due to the Hall effect is generated between the third and fourth conduction nodes. An operational amplifier has an inverting input terminal coupled to the fourth conduction node, a non-inverting input terminal biased at the voltage at the third conduction node, and an output terminal coupled in feedback mode to the inverting input by a feedback resistor. The current generated in feedback through the feedback resistor generates a voltage indicating unbalancing, due to the Hall effect, between the third and fourth conductive nodes, and consequently indicates the intensity of the magnetic field that acts upon the Hall cell.