公开(公告)号：US11063211B2

公开(公告)日：2021-07-13

申请号：US16201264

申请日：2018-11-27

Applicant: STMicroelectronics S.r.l.

Inventor： Dario Paci ,  Marco Morelli ,  Caterina Riva

IPC: G11B5/127 ,  H04R31/00 ,  H01L43/12 ,  B82Y25/00 ,  G01R33/09 ,  H01L27/22 ,  G01R33/00 ,  H01L43/08 ,  G01R33/02

Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

公开(公告)号：US10825954B2

公开(公告)日：2020-11-03

申请号：US15983959

申请日：2018-05-18

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Morelli ,  Fabrizio Fausto Renzo Toia ,  Giuseppe Barillaro ,  Marco Sambi

IPC: H01L33/14 ,  H01L33/34 ,  H01L33/00

Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

公开(公告)号：US20180269357A1

公开(公告)日：2018-09-20

申请号：US15983959

申请日：2018-05-18

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Morelli ,  Fabrizio Fausto Renzo Toia ,  Giuseppe Barillaro ,  Marco Sambi

IPC: H01L33/34 ,  H01L33/14 ,  H01L33/00

Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

公开(公告)号：US10094891B2

公开(公告)日：2018-10-09

申请号：US15135793

申请日：2016-04-22

Applicant: STMicroelectronics S.r.l.

Inventor： Dario Paci ,  Marco Marchesi ,  Marco Morelli

IPC: G01R33/09 ,  G01R33/00 ,  G01R33/07 ,  G01R33/025

Abstract: An integrated AMR magnetoresistive sensor has a magnetoresistor, a set/reset coil and a shielding region arranged on top of each other. The set/reset coil is positioned between the magnetoresistor and the shielding region. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape having a length in a first direction parallel to the preferential magnetization direction and a width in a second direction perpendicular to the first direction. The set/reset coil has at least one stretch extending transversely to the magnetoresistive strip. The shielding region is a ferromagnetic material and has a width in the second direction greater than the width of the magnetoresistive strip so as to attenuate the external magnetic field traversing the magnetoresistive strip and increase the sensitivity scale of the magnetoresistive sensor.

公开(公告)号：US20150276894A1

公开(公告)日：2015-10-01

申请号：US14637698

申请日：2015-03-04

Applicant: STMicroelectronics S.r.l.

Inventor： Giulio Ricotti ,  Marco Morelli ,  Marco Marchesi

IPC: G01R33/07

CPC classification number: G01R33/07 ,  G01R33/0017 ,  G01R33/0029 ,  G01R33/075

Abstract: A magnetic field sensor formed by a Hall cell having a first, second, third and fourth conduction nodes electrically coupled together by resistive paths. Flowing between the first and second conduction nodes is a control current. In the presence of a magnetic field, a difference of potential due to the Hall effect is generated between the third and fourth conduction nodes. An operational amplifier has an inverting input terminal coupled to the fourth conduction node, a non-inverting input terminal biased at the voltage at the third conduction node, and an output terminal coupled in feedback mode to the inverting input by a feedback resistor. The current generated in feedback through the feedback resistor generates a voltage indicating unbalancing, due to the Hall effect, between the third and fourth conductive nodes, and consequently indicates the intensity of the magnetic field that acts upon the Hall cell.

Abstract translation: 由具有通过电阻路径电耦合在一起的第一，第二，第三和第四导电节点的霍尔单元形成的磁场传感器。 第一和第二导电节点之间的流动是控制电流。 在存在磁场的情况下，在第三和第四导电节点之间产生由于霍尔效应引起的电位差。 运算放大器具有耦合到第四导通节点的反相输入端子，偏置在第三导通节点处的电压的非反相输入端子，以及以反馈模式以反馈电阻器耦合到反相输入端的输出端子。 通过反馈电阻反馈产生的电流由于第三和第四导电节点之间的霍尔效应而产生指示不平衡的电压，并且因此表示作用于霍尔单元的磁场的强度。

公开(公告)号：US11469136B2

公开(公告)日：2022-10-11

申请号：US17001295

申请日：2020-08-24

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone Dario Mariani ,  Fabrizio Fausto Renzo Toia ,  Marco Sambi ,  Davide Giuseppe Patti ,  Marco Morelli ,  Giuseppe Barillaro

IPC: H01L21/76 ,  H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  H01L29/06 ,  H01L29/78

Abstract: A technique to make silicon oxide regions from porous silicon and related semiconductor structures is disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

公开(公告)号：US10236378B2

公开(公告)日：2019-03-19

申请号：US15457799

申请日：2017-03-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Fabrizio Fausto Renzo Toia ,  Marco Marchesi ,  Marco Morelli ,  Riccardo Depetro ,  Giuseppe Barillaro ,  Lucanos Marsilio Strambini

IPC: H01L29/76 ,  H01L29/78 ,  H01L21/02 ,  H01L21/265 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/762 ,  H01L29/06 ,  H01L29/08 ,  H01L29/36 ,  H01L29/417 ,  H01L29/66 ,  H03K17/687 ,  H01L29/32 ,  H01L29/861 ,  H01L29/16

Abstract: An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

公开(公告)号：US10177306B2

公开(公告)日：2019-01-08

申请号：US14938121

申请日：2015-11-11

Applicant: STMicroelectronics S.r.l.

Inventor： Dario Paci ,  Marco Morelli ,  Caterina Riva

IPC: G11B5/127 ,  H04R31/00 ,  H01L43/12 ,  G01R33/00 ,  G01R33/09 ,  H01L43/08 ,  H01L27/22

Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

公开(公告)号：US10002990B2

公开(公告)日：2018-06-19

申请号：US15087183

申请日：2016-03-31

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Morelli ,  Fabrizio Fausto Renzo Toia ,  Giuseppe Barillaro ,  Marco Sambi

IPC: H01L33/34 ,  H01L33/00 ,  H01L33/14

CPC classification number: H01L33/346 ,  H01L33/0054 ,  H01L33/145

Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

公开(公告)号：US20170312782A1

公开(公告)日：2017-11-02

申请号：US15463858

申请日：2017-03-20

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Morelli ,  Fabio Quaglia ,  Fabrizio Fausto Renzo Toia ,  Marco Sambi ,  Giuseppe Barillaro

IPC: B06B1/02 ,  B06B1/06

CPC classification number: B06B1/0292 ,  A61B8/4483 ,  B06B1/0644 ,  B06B1/067 ,  B06B1/0685 ,  G10K9/22 ,  G10K11/02 ,  H04R19/005

Abstract: An acoustic device includes a micro-machined acoustic transducer element, an acoustically attenuating region, and an acoustic matching region arranged between the acoustic transducer element and the acoustically attenuating region. The acoustic transducer element is formed in a first substrate housing a cavity delimiting a membrane. A second substrate of semiconductor material integrating an electronic circuit is arranged between the acoustic transducer element and the acoustically attenuating region. The acoustic matching region has a first interface with the second substrate and a second interface with the acoustically attenuating region. The acoustic matching region has an impedance matched to the impedance of the second substrate in proximity of the first interface, and an impedance matched to the acoustically attenuating region in proximity of the second interface.